GB1389298A - Insulated gate field effect transistors - Google Patents

Insulated gate field effect transistors

Info

Publication number
GB1389298A
GB1389298A GB1916172A GB1916172A GB1389298A GB 1389298 A GB1389298 A GB 1389298A GB 1916172 A GB1916172 A GB 1916172A GB 1916172 A GB1916172 A GB 1916172A GB 1389298 A GB1389298 A GB 1389298A
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistors
read
insulated gate
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1916172A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1389298A publication Critical patent/GB1389298A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
GB1916172A 1971-04-29 1972-04-25 Insulated gate field effect transistors Expired GB1389298A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46028418A JPS511553B1 (enExample) 1971-04-29 1971-04-29

Publications (1)

Publication Number Publication Date
GB1389298A true GB1389298A (en) 1975-04-03

Family

ID=12248091

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1916172A Expired GB1389298A (en) 1971-04-29 1972-04-25 Insulated gate field effect transistors

Country Status (7)

Country Link
JP (1) JPS511553B1 (enExample)
CA (1) CA961583A (enExample)
DE (1) DE2221128A1 (enExample)
FR (1) FR2135198B1 (enExample)
GB (1) GB1389298A (enExample)
IT (1) IT953877B (enExample)
NL (1) NL7205697A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2132622A (en) * 1982-11-26 1984-07-11 Faesite Spa Articles made of bonded, heated and pressed wood fibres

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2132622A (en) * 1982-11-26 1984-07-11 Faesite Spa Articles made of bonded, heated and pressed wood fibres

Also Published As

Publication number Publication date
JPS511553B1 (enExample) 1976-01-19
FR2135198B1 (enExample) 1980-02-01
FR2135198A1 (enExample) 1972-12-15
NL7205697A (enExample) 1972-10-31
IT953877B (it) 1973-08-10
CA961583A (en) 1975-01-21
DE2221128A1 (de) 1972-11-09

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee