IT953877B - Transistore ad effetto di campo del tipo a metallo ossido semicon duttore - Google Patents
Transistore ad effetto di campo del tipo a metallo ossido semicon duttoreInfo
- Publication number
- IT953877B IT953877B IT23756/72A IT2375672A IT953877B IT 953877 B IT953877 B IT 953877B IT 23756/72 A IT23756/72 A IT 23756/72A IT 2375672 A IT2375672 A IT 2375672A IT 953877 B IT953877 B IT 953877B
- Authority
- IT
- Italy
- Prior art keywords
- field effect
- effect transistor
- metal type
- oxide metal
- semicon ductor
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
- H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46028418A JPS511553B1 (it) | 1971-04-29 | 1971-04-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT953877B true IT953877B (it) | 1973-08-10 |
Family
ID=12248091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT23756/72A IT953877B (it) | 1971-04-29 | 1972-04-29 | Transistore ad effetto di campo del tipo a metallo ossido semicon duttore |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS511553B1 (it) |
| CA (1) | CA961583A (it) |
| DE (1) | DE2221128A1 (it) |
| FR (1) | FR2135198B1 (it) |
| GB (1) | GB1389298A (it) |
| IT (1) | IT953877B (it) |
| NL (1) | NL7205697A (it) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT8223557U1 (it) * | 1982-11-26 | 1984-05-26 | Faesite Spa | Manufatti costituiti da fibre di legno incollate, riscaldate e pressate |
-
1971
- 1971-04-29 JP JP46028418A patent/JPS511553B1/ja active Pending
-
1972
- 1972-04-25 GB GB1916172A patent/GB1389298A/en not_active Expired
- 1972-04-27 NL NL7205697A patent/NL7205697A/xx not_active Application Discontinuation
- 1972-04-28 DE DE19722221128 patent/DE2221128A1/de active Pending
- 1972-04-28 CA CA140,830A patent/CA961583A/en not_active Expired
- 1972-04-28 FR FR7215364A patent/FR2135198B1/fr not_active Expired
- 1972-04-29 IT IT23756/72A patent/IT953877B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| NL7205697A (it) | 1972-10-31 |
| JPS511553B1 (it) | 1976-01-19 |
| FR2135198A1 (it) | 1972-12-15 |
| DE2221128A1 (de) | 1972-11-09 |
| CA961583A (en) | 1975-01-21 |
| GB1389298A (en) | 1975-04-03 |
| FR2135198B1 (it) | 1980-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SE416309B (sv) | Fotosentiv elastomer komposition | |
| IT1048888B (it) | Composizioni di p mentani sostituiti | |
| MY7600090A (en) | Fabrication of semiconductor devices | |
| IT965487B (it) | Perfezionamento nelle disposizioni di attacco del cofano di autovettu re | |
| IT962927B (it) | Transistore ad effetto di campo | |
| IT948967B (it) | Dispositivo semiconduttore ad accoppiamento di cariche | |
| GB1343334A (en) | Fabrication of semiconductor devices | |
| IT976170B (it) | Circuito integrato con mezzi di eli minazione dell inversione spuria | |
| BR7102459D0 (pt) | Elastomeros liquidos moldaveis | |
| DE2112817B2 (de) | Halbleiteranordnung | |
| IT953974B (it) | Transistore ad effetto di campo e procedimento per fabbricare transistori ad effetto di campo | |
| IT976112B (it) | Procedimento per la fabbricazione di dispositivi semiconduttori | |
| IT964224B (it) | Elementi semiconduttori piezoelet trici | |
| IT963413B (it) | Procedimento di fotoincisione particolarmente per la fabbrica zione di circuiti integrati | |
| IT938972B (it) | Disposizione di semiconduttori fotosensibile | |
| BE769490A (fr) | Fabrication d'aminobenzothiazoles | |
| IT949059B (it) | Procedimento per la fabbricazione di transistori planari a valanga | |
| IT939499B (it) | Fabbricazione di dispositivi semi conduttori integrati mediante inci sione elettrochimica | |
| IT988365B (it) | Composizione di sciampo | |
| IT953877B (it) | Transistore ad effetto di campo del tipo a metallo ossido semicon duttore | |
| IT949867B (it) | Circuito di soglia di tipo integrato | |
| IT982478B (it) | Obiettivo ad elevata apertura del tipo di gauss esteso | |
| IT993007B (it) | Circuito logico polifase impiegante transistori ad effetto di campo metallo isolatore semiconduttore complementari | |
| IT1046735B (it) | Transistore bipolare combinato con un transistore ad effetto di campo a semiconduttori a base di ossidi metallici | |
| IT957703B (it) | Dispositivo ad arseniuro di gallio |