GB1389298A - Insulated gate field effect transistors - Google Patents
Insulated gate field effect transistorsInfo
- Publication number
- GB1389298A GB1389298A GB1916172A GB1916172A GB1389298A GB 1389298 A GB1389298 A GB 1389298A GB 1916172 A GB1916172 A GB 1916172A GB 1916172 A GB1916172 A GB 1916172A GB 1389298 A GB1389298 A GB 1389298A
- Authority
- GB
- United Kingdom
- Prior art keywords
- field effect
- effect transistors
- read
- insulated gate
- gate field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 241001191009 Gymnomyza Species 0.000 abstract 1
- 238000010586 diagram Methods 0.000 abstract 1
- HLXGRHNZZSMNRX-UHFFFAOYSA-M sodium;3-(n-ethyl-3,5-dimethylanilino)-2-hydroxypropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC(C)=CC(C)=C1 HLXGRHNZZSMNRX-UHFFFAOYSA-M 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Abstract
1389298 FET gate and store circuits SONY CORP 25 April 1972 [29 April 1971] 19161/72 Heading H3T [Also in Division H1] A circuit comprising a four bit memory using MAOS field effect transistors is shown, together with, in Fig. 11, the pulse wave modes for write, read and erase operations. V DD is the output power line and R out1 and R out2 are the read-out signals 1 and 2 respectively. Fig. 13 (not shown), is a block diagram of a 256 bit electrically programmable and alterable read only memory that has full decoding capability on a single chip.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2841871A JPS511553B1 (en) | 1971-04-29 | 1971-04-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1389298A true GB1389298A (en) | 1975-04-03 |
Family
ID=12248091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1916172A Expired GB1389298A (en) | 1971-04-29 | 1972-04-25 | Insulated gate field effect transistors |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS511553B1 (en) |
CA (1) | CA961583A (en) |
DE (1) | DE2221128A1 (en) |
FR (1) | FR2135198B1 (en) |
GB (1) | GB1389298A (en) |
IT (1) | IT953877B (en) |
NL (1) | NL7205697A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2132622A (en) * | 1982-11-26 | 1984-07-11 | Faesite Spa | Articles made of bonded, heated and pressed wood fibres |
-
1971
- 1971-04-29 JP JP2841871A patent/JPS511553B1/ja active Pending
-
1972
- 1972-04-25 GB GB1916172A patent/GB1389298A/en not_active Expired
- 1972-04-27 NL NL7205697A patent/NL7205697A/xx not_active Application Discontinuation
- 1972-04-28 CA CA140,830A patent/CA961583A/en not_active Expired
- 1972-04-28 FR FR7215364A patent/FR2135198B1/fr not_active Expired
- 1972-04-28 DE DE19722221128 patent/DE2221128A1/en active Pending
- 1972-04-29 IT IT2375672A patent/IT953877B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2132622A (en) * | 1982-11-26 | 1984-07-11 | Faesite Spa | Articles made of bonded, heated and pressed wood fibres |
Also Published As
Publication number | Publication date |
---|---|
FR2135198B1 (en) | 1980-02-01 |
JPS511553B1 (en) | 1976-01-19 |
DE2221128A1 (en) | 1972-11-09 |
CA961583A (en) | 1975-01-21 |
FR2135198A1 (en) | 1972-12-15 |
IT953877B (en) | 1973-08-10 |
NL7205697A (en) | 1972-10-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |