GB1389298A - Insulated gate field effect transistors - Google Patents

Insulated gate field effect transistors

Info

Publication number
GB1389298A
GB1389298A GB1916172A GB1916172A GB1389298A GB 1389298 A GB1389298 A GB 1389298A GB 1916172 A GB1916172 A GB 1916172A GB 1916172 A GB1916172 A GB 1916172A GB 1389298 A GB1389298 A GB 1389298A
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistors
read
insulated gate
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1916172A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1389298A publication Critical patent/GB1389298A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)

Abstract

1389298 FET gate and store circuits SONY CORP 25 April 1972 [29 April 1971] 19161/72 Heading H3T [Also in Division H1] A circuit comprising a four bit memory using MAOS field effect transistors is shown, together with, in Fig. 11, the pulse wave modes for write, read and erase operations. V DD is the output power line and R out1 and R out2 are the read-out signals 1 and 2 respectively. Fig. 13 (not shown), is a block diagram of a 256 bit electrically programmable and alterable read only memory that has full decoding capability on a single chip.
GB1916172A 1971-04-29 1972-04-25 Insulated gate field effect transistors Expired GB1389298A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2841871A JPS511553B1 (en) 1971-04-29 1971-04-29

Publications (1)

Publication Number Publication Date
GB1389298A true GB1389298A (en) 1975-04-03

Family

ID=12248091

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1916172A Expired GB1389298A (en) 1971-04-29 1972-04-25 Insulated gate field effect transistors

Country Status (7)

Country Link
JP (1) JPS511553B1 (en)
CA (1) CA961583A (en)
DE (1) DE2221128A1 (en)
FR (1) FR2135198B1 (en)
GB (1) GB1389298A (en)
IT (1) IT953877B (en)
NL (1) NL7205697A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2132622A (en) * 1982-11-26 1984-07-11 Faesite Spa Articles made of bonded, heated and pressed wood fibres

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2132622A (en) * 1982-11-26 1984-07-11 Faesite Spa Articles made of bonded, heated and pressed wood fibres

Also Published As

Publication number Publication date
FR2135198B1 (en) 1980-02-01
JPS511553B1 (en) 1976-01-19
DE2221128A1 (en) 1972-11-09
CA961583A (en) 1975-01-21
FR2135198A1 (en) 1972-12-15
IT953877B (en) 1973-08-10
NL7205697A (en) 1972-10-31

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee