CA961583A - Metal oxide semiconductor field effect transistor - Google Patents

Metal oxide semiconductor field effect transistor

Info

Publication number
CA961583A
CA961583A CA140,830A CA140830A CA961583A CA 961583 A CA961583 A CA 961583A CA 140830 A CA140830 A CA 140830A CA 961583 A CA961583 A CA 961583A
Authority
CA
Canada
Prior art keywords
metal oxide
oxide semiconductor
field effect
effect transistor
semiconductor field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA140,830A
Other versions
CA140830S (en
Inventor
Shuichi Sato
Tadanori Yamaguchi
Teruaki Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA961583A publication Critical patent/CA961583A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CA140,830A 1971-04-29 1972-04-28 Metal oxide semiconductor field effect transistor Expired CA961583A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2841871A JPS511553B1 (en) 1971-04-29 1971-04-29

Publications (1)

Publication Number Publication Date
CA961583A true CA961583A (en) 1975-01-21

Family

ID=12248091

Family Applications (1)

Application Number Title Priority Date Filing Date
CA140,830A Expired CA961583A (en) 1971-04-29 1972-04-28 Metal oxide semiconductor field effect transistor

Country Status (7)

Country Link
JP (1) JPS511553B1 (en)
CA (1) CA961583A (en)
DE (1) DE2221128A1 (en)
FR (1) FR2135198B1 (en)
GB (1) GB1389298A (en)
IT (1) IT953877B (en)
NL (1) NL7205697A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT8223557V0 (en) * 1982-11-26 1982-11-26 Faesite Spa MANUFACTURES CONSTITUTED FROM GLUES OF WOOD GLUED, HEATED AND PRESSED.

Also Published As

Publication number Publication date
IT953877B (en) 1973-08-10
FR2135198B1 (en) 1980-02-01
GB1389298A (en) 1975-04-03
NL7205697A (en) 1972-10-31
DE2221128A1 (en) 1972-11-09
FR2135198A1 (en) 1972-12-15
JPS511553B1 (en) 1976-01-19

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