AU463429B2 - Field effect transistor ina semiconductor body - Google Patents

Field effect transistor ina semiconductor body

Info

Publication number
AU463429B2
AU463429B2 AU43561/72A AU4356172A AU463429B2 AU 463429 B2 AU463429 B2 AU 463429B2 AU 43561/72 A AU43561/72 A AU 43561/72A AU 4356172 A AU4356172 A AU 4356172A AU 463429 B2 AU463429 B2 AU 463429B2
Authority
AU
Australia
Prior art keywords
field effect
effect transistor
semiconductor body
ina semiconductor
transistor ina
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU43561/72A
Other versions
AU4356172A (en
Inventor
Joshi Vishnuprakash
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of AU4356172A publication Critical patent/AU4356172A/en
Application granted granted Critical
Publication of AU463429B2 publication Critical patent/AU463429B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
AU43561/72A 1971-07-05 1972-06-19 Field effect transistor ina semiconductor body Expired AU463429B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEDE8213325 1971-07-05
DE19712133258 DE2133258A1 (en) 1971-07-05 1971-07-05 FIELD EFFECT TRANSISTOR FROM A SEMICONDUCTOR BODY

Publications (2)

Publication Number Publication Date
AU4356172A AU4356172A (en) 1974-01-03
AU463429B2 true AU463429B2 (en) 1975-07-24

Family

ID=5812651

Family Applications (1)

Application Number Title Priority Date Filing Date
AU43561/72A Expired AU463429B2 (en) 1971-07-05 1972-06-19 Field effect transistor ina semiconductor body

Country Status (2)

Country Link
AU (1) AU463429B2 (en)
DE (1) DE2133258A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3672030D1 (en) * 1985-01-30 1990-07-19 Toshiba Kawasaki Kk SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION THEREOF.

Also Published As

Publication number Publication date
DE2133258A1 (en) 1973-01-25
AU4356172A (en) 1974-01-03

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