AU3180371A - Integrated insulated-gate field effect transistor devices - Google Patents
Integrated insulated-gate field effect transistor devicesInfo
- Publication number
- AU3180371A AU3180371A AU31803/71A AU3180371A AU3180371A AU 3180371 A AU3180371 A AU 3180371A AU 31803/71 A AU31803/71 A AU 31803/71A AU 3180371 A AU3180371 A AU 3180371A AU 3180371 A AU3180371 A AU 3180371A
- Authority
- AU
- Australia
- Prior art keywords
- field effect
- effect transistor
- gate field
- transistor devices
- integrated insulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEDE82043 | 1970-09-02 | ||
DE19702043405 DE2043405A1 (en) | 1970-09-02 | 1970-09-02 | Semiconductor arrangement with monolithically integrated insulating layer field effect transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
AU3180371A true AU3180371A (en) | 1973-02-01 |
Family
ID=5781308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU31803/71A Expired AU3180371A (en) | 1970-09-02 | 1971-07-29 | Integrated insulated-gate field effect transistor devices |
Country Status (8)
Country | Link |
---|---|
AU (1) | AU3180371A (en) |
BE (1) | BE770898A (en) |
CH (1) | CH534431A (en) |
DE (1) | DE2043405A1 (en) |
ES (1) | ES394706A1 (en) |
FR (1) | FR2105176B1 (en) |
GB (1) | GB1353366A (en) |
NL (1) | NL7112058A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2572851B1 (en) * | 1984-11-08 | 1987-07-31 | Matra Harris Semiconducteurs | PREDIFFUSED NETWORK WITH INTERCONNECTABLE BASE CELLS |
-
1970
- 1970-09-02 DE DE19702043405 patent/DE2043405A1/en active Pending
-
1971
- 1971-07-20 FR FR7127187A patent/FR2105176B1/fr not_active Expired
- 1971-07-29 AU AU31803/71A patent/AU3180371A/en not_active Expired
- 1971-08-03 BE BE770898A patent/BE770898A/en unknown
- 1971-08-31 GB GB4055471A patent/GB1353366A/en not_active Expired
- 1971-09-01 CH CH1286271A patent/CH534431A/en not_active IP Right Cessation
- 1971-09-01 NL NL7112058A patent/NL7112058A/xx unknown
- 1971-09-01 ES ES394706A patent/ES394706A1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2043405A1 (en) | 1972-03-16 |
FR2105176A1 (en) | 1972-04-28 |
BE770898A (en) | 1971-12-16 |
NL7112058A (en) | 1972-03-06 |
ES394706A1 (en) | 1975-11-01 |
FR2105176B1 (en) | 1974-10-31 |
CH534431A (en) | 1973-02-28 |
GB1353366A (en) | 1974-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA965188A (en) | Field effect transistor | |
CA931662A (en) | Field effect semiconductor device | |
GB1343666A (en) | Low noise field effect transistor | |
GB1345528A (en) | Field effect transistor devices | |
AU452187B2 (en) | Field effect transistor circuit | |
AU3610671A (en) | Field-effect semiconductor device | |
CA934069A (en) | Field effect transistor circuit | |
AU3180371A (en) | Integrated insulated-gate field effect transistor devices | |
CA858745A (en) | Insulated-gate field effect transistor | |
AU463429B2 (en) | Field effect transistor ina semiconductor body | |
AU449353B2 (en) | Insulated-gate field effect transistor | |
CA799642A (en) | Insulated-gate field-effect transistor | |
CA838883A (en) | Field effect transistors | |
CA850261A (en) | Field effect transistor circuit | |
CA938382A (en) | Mis field effect transistor | |
AU1696970A (en) | Insulated-gate field effect transistor | |
CA844242A (en) | Mos field effect transistor hall effect devices | |
AU460937B2 (en) | Complementary insulated gate field effect transistor integrated circuits | |
CA901170A (en) | Insulated-gate field effect transistor | |
CA791895A (en) | Field effect transistor with insulated-gate | |
AU412258B2 (en) | Insulated-gate field-effect transistor | |
AU426326B2 (en) | Field effect semiconductor device | |
AU434481B2 (en) | Field effect semiconductor device | |
CA878172A (en) | Field effect transistor | |
CA885691A (en) | Field effect transistor |