IT1046735B - Transistore bipolare combinato con un transistore ad effetto di campo a semiconduttori a base di ossidi metallici - Google Patents
Transistore bipolare combinato con un transistore ad effetto di campo a semiconduttori a base di ossidi metalliciInfo
- Publication number
- IT1046735B IT1046735B IT30529/74A IT3052974A IT1046735B IT 1046735 B IT1046735 B IT 1046735B IT 30529/74 A IT30529/74 A IT 30529/74A IT 3052974 A IT3052974 A IT 3052974A IT 1046735 B IT1046735 B IT 1046735B
- Authority
- IT
- Italy
- Prior art keywords
- metal oxide
- based semiconductor
- semiconductor field
- oxide based
- combined
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2363577A DE2363577A1 (de) | 1973-12-20 | 1973-12-20 | Kombination aus einem bipolaren transistor und einem mos-feldeffekttransistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1046735B true IT1046735B (it) | 1980-07-31 |
Family
ID=5901421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT30529/74A IT1046735B (it) | 1973-12-20 | 1974-12-13 | Transistore bipolare combinato con un transistore ad effetto di campo a semiconduttori a base di ossidi metallici |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS5094887A (it) |
| AT (1) | AT340481B (it) |
| BE (1) | BE823686R (it) |
| CA (1) | CA1033468A (it) |
| CH (1) | CH586959A5 (it) |
| DE (1) | DE2363577A1 (it) |
| FR (1) | FR2255710B2 (it) |
| GB (1) | GB1481184A (it) |
| IT (1) | IT1046735B (it) |
| NL (1) | NL7416703A (it) |
| SE (1) | SE404853B (it) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3470632D1 (en) * | 1983-02-03 | 1988-05-26 | Fairchild Camera Instr Co | High voltage mos/bipolar power transistor apparatus |
| DE3620686C2 (de) * | 1986-06-20 | 1999-07-22 | Daimler Chrysler Ag | Strukturierter Halbleiterkörper |
| US4857766A (en) * | 1987-10-30 | 1989-08-15 | International Business Machine Corporation | BiMos input circuit |
| WO2009019866A1 (ja) * | 2007-08-07 | 2009-02-12 | Kaori Takakubo | 半導体装置及びその駆動方法 |
-
1973
- 1973-12-20 DE DE2363577A patent/DE2363577A1/de not_active Withdrawn
-
1974
- 1974-11-15 AT AT917974A patent/AT340481B/de active
- 1974-11-27 GB GB51302/74A patent/GB1481184A/en not_active Expired
- 1974-12-11 CH CH1650774A patent/CH586959A5/xx not_active IP Right Cessation
- 1974-12-13 IT IT30529/74A patent/IT1046735B/it active
- 1974-12-13 CA CA216,005A patent/CA1033468A/en not_active Expired
- 1974-12-17 FR FR7441548A patent/FR2255710B2/fr not_active Expired
- 1974-12-19 SE SE7416017A patent/SE404853B/xx unknown
- 1974-12-19 JP JP49146687A patent/JPS5094887A/ja active Pending
- 1974-12-20 BE BE151790A patent/BE823686R/xx active
- 1974-12-20 NL NL7416703A patent/NL7416703A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| SE404853B (sv) | 1978-10-30 |
| FR2255710B2 (it) | 1979-02-23 |
| NL7416703A (nl) | 1975-06-24 |
| FR2255710A2 (it) | 1975-07-18 |
| CH586959A5 (it) | 1977-04-15 |
| DE2363577A1 (de) | 1975-06-26 |
| AT340481B (de) | 1977-12-12 |
| CA1033468A (en) | 1978-06-20 |
| SE7416017L (it) | 1975-06-23 |
| GB1481184A (en) | 1977-07-27 |
| JPS5094887A (it) | 1975-07-28 |
| ATA917974A (de) | 1977-04-15 |
| BE823686R (fr) | 1975-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SE7502893L (sv) | Felteffekttransistor. | |
| IT1058321B (it) | Transistore complementare ad effetto di campo | |
| IT1005664B (it) | Dispositivo semiconduttore | |
| NL163904C (nl) | Halfgeleiderinrichting. | |
| NL182110C (nl) | Halfgeleiderinrichting. | |
| IT1010165B (it) | Procedimento perfezionato per la fabbricazione di circuiti semicon duttori integrati | |
| IT1034678B (it) | Transistore al silicio a effetto di campo com elettrodo digate schottky | |
| IT1012351B (it) | Circuito integrato semiconduttore | |
| IT962927B (it) | Transistore ad effetto di campo | |
| BE824887A (fr) | Transistor bipolaire | |
| BE809922A (fr) | Circuit dynamique a transistors mosfet | |
| NL7502113A (nl) | Halfgeleiderbouwelement. | |
| NL7504306A (nl) | Halfgeleider-schakeling. | |
| AR195728A1 (es) | Aparato rectificador con semiconductores | |
| SE7416049L (sv) | Halvledare | |
| IT950006B (it) | Transistor di potenza a radiofre quenza | |
| SE7506733L (sv) | Halvledare. | |
| IT1046735B (it) | Transistore bipolare combinato con un transistore ad effetto di campo a semiconduttori a base di ossidi metallici | |
| IT949059B (it) | Procedimento per la fabbricazione di transistori planari a valanga | |
| BE822192A (fr) | Diode semiconductrice electroluminescente | |
| IT1009920B (it) | Dispositivo semiconduttore | |
| IT1008753B (it) | Transistor a silicio ad effetto di campo a base non polarizzata | |
| IT1012166B (it) | Dispositivo semiconduttore | |
| IT1038519B (it) | Diffusione planare per la faberi cazione di un transistore | |
| NL7510503A (nl) | Halfgeleidergelijkrichter. |