DE2203859A1 - Komplexes elektronisches System auf einer Scheibe - Google Patents

Komplexes elektronisches System auf einer Scheibe

Info

Publication number
DE2203859A1
DE2203859A1 DE19722203859 DE2203859A DE2203859A1 DE 2203859 A1 DE2203859 A1 DE 2203859A1 DE 19722203859 DE19722203859 DE 19722203859 DE 2203859 A DE2203859 A DE 2203859A DE 2203859 A1 DE2203859 A1 DE 2203859A1
Authority
DE
Germany
Prior art keywords
subsystem
circuit
subsystems
circuits
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19722203859
Other languages
German (de)
English (en)
Inventor
W.S.; Kuo Chang-Kiang; Houston; Cragon Harvey George Austin; Tex. Henrion (V.StA.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE2203859A1 publication Critical patent/DE2203859A1/de
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316—Testing of analog circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5453—Dispositions of bond wires connecting between multiple bond pads on a chip, e.g. daisy chain

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
DE19722203859 1971-01-27 1972-01-27 Komplexes elektronisches System auf einer Scheibe Pending DE2203859A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11008371A 1971-01-27 1971-01-27
US11021671A 1971-01-27 1971-01-27
US14295971A 1971-05-13 1971-05-13

Publications (1)

Publication Number Publication Date
DE2203859A1 true DE2203859A1 (de) 1972-08-24

Family

ID=27380777

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722203859 Pending DE2203859A1 (de) 1971-01-27 1972-01-27 Komplexes elektronisches System auf einer Scheibe

Country Status (5)

Country Link
US (1) US3742254A (enExample)
DE (1) DE2203859A1 (enExample)
FR (1) FR2123423A1 (enExample)
GB (1) GB1358935A (enExample)
NL (1) NL7201095A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0013290A1 (en) * 1978-12-29 1980-07-23 International Business Machines Corporation Large scale integrated circuit wafer and method of testing same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849872A (en) * 1972-10-24 1974-11-26 Ibm Contacting integrated circuit chip terminal through the wafer kerf
FR2330014A1 (fr) * 1973-05-11 1977-05-27 Ibm France Procede de test de bloc de circuits logiques integres et blocs en faisant application
FR2201475B1 (enExample) * 1973-07-20 1978-12-01 Ibm
DE2643482A1 (de) * 1976-09-27 1978-03-30 Siemens Ag Halbleiterplaettchen zur herstellung hochintegrierter bausteine
FR2506045A1 (fr) * 1981-05-15 1982-11-19 Thomson Csf Procede et dispositif de selection de circuits integres a haute fiabilite
DE3232843C2 (de) * 1981-09-03 1986-07-03 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa MOS-Logikschaltung
US4801869A (en) * 1987-04-27 1989-01-31 International Business Machines Corporation Semiconductor defect monitor for diagnosing processing-induced defects

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3320430A (en) * 1964-09-25 1967-05-16 Sperry Rand Corp Photosensitive information bearing document detector
US3416043A (en) * 1965-04-12 1968-12-10 Burroughs Corp Integrated anti-ringing clamped logic circuits
US3413573A (en) * 1965-06-18 1968-11-26 Westinghouse Electric Corp Microelectronic frequency selective apparatus with vibratory member and means responsive thereto
US3473054A (en) * 1966-04-29 1969-10-14 Square D Co Time delay circuit with field-effect transistor
US3407339A (en) * 1966-05-02 1968-10-22 North American Rockwell Voltage protection device utilizing a field effect transistor
US3483400A (en) * 1966-06-15 1969-12-09 Sharp Kk Flip-flop circuit
GB1198084A (en) * 1966-07-01 1970-07-08 Sharp Kk Information Control System
US3447103A (en) * 1966-12-19 1969-05-27 Bell Telephone Labor Inc System for initially adjusting a signal equalizing device
US3496389A (en) * 1967-01-25 1970-02-17 Motorola Inc Timing circuit with field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0013290A1 (en) * 1978-12-29 1980-07-23 International Business Machines Corporation Large scale integrated circuit wafer and method of testing same

Also Published As

Publication number Publication date
NL7201095A (enExample) 1972-07-31
FR2123423A1 (enExample) 1972-09-08
US3742254A (en) 1973-06-26
GB1358935A (en) 1974-07-03

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