DE2164838C3 - Verfahren zum Aufbringen von planaren Schichten - Google Patents

Verfahren zum Aufbringen von planaren Schichten

Info

Publication number
DE2164838C3
DE2164838C3 DE2164838A DE2164838A DE2164838C3 DE 2164838 C3 DE2164838 C3 DE 2164838C3 DE 2164838 A DE2164838 A DE 2164838A DE 2164838 A DE2164838 A DE 2164838A DE 2164838 C3 DE2164838 C3 DE 2164838C3
Authority
DE
Germany
Prior art keywords
etching process
sputtering
layers
silicon dioxide
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2164838A
Other languages
German (de)
English (en)
Other versions
DE2164838B2 (de
DE2164838A1 (de
Inventor
Raymond Ping Poughkeepsie N.Y. Auyang
Harold Raymond Derry N.H. Koenig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2164838A1 publication Critical patent/DE2164838A1/de
Publication of DE2164838B2 publication Critical patent/DE2164838B2/de
Application granted granted Critical
Publication of DE2164838C3 publication Critical patent/DE2164838C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
DE2164838A 1970-12-31 1971-12-27 Verfahren zum Aufbringen von planaren Schichten Expired DE2164838C3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10325070A 1970-12-31 1970-12-31
US05/512,781 US3983022A (en) 1970-12-31 1974-10-07 Process for planarizing a surface

Publications (3)

Publication Number Publication Date
DE2164838A1 DE2164838A1 (de) 1972-07-20
DE2164838B2 DE2164838B2 (de) 1980-04-24
DE2164838C3 true DE2164838C3 (de) 1980-12-18

Family

ID=26800239

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2164838A Expired DE2164838C3 (de) 1970-12-31 1971-12-27 Verfahren zum Aufbringen von planaren Schichten

Country Status (4)

Country Link
US (1) US3983022A (https=)
DE (1) DE2164838C3 (https=)
FR (1) FR2119930B1 (https=)
GB (1) GB1361214A (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3804738A (en) * 1973-06-29 1974-04-16 Ibm Partial planarization of electrically insulative films by resputtering
US4036723A (en) * 1975-08-21 1977-07-19 International Business Machines Corporation RF bias sputtering method for producing insulating films free of surface irregularities
US4035276A (en) * 1976-04-29 1977-07-12 Ibm Corporation Making coplanar layers of thin films
NL7701559A (nl) * 1977-02-15 1978-08-17 Philips Nv Het maken van schuine hellingen aan metaal- patronen, alsmede substraat voor een geinte- greerde schakeling voorzien van een dergelijk patroon.
US4131533A (en) * 1977-12-30 1978-12-26 International Business Machines Corporation RF sputtering apparatus having floating anode shield
JPS56133884A (en) * 1980-03-24 1981-10-20 Hitachi Ltd Manufacture of photoelectric transducer
US4492717A (en) * 1981-07-27 1985-01-08 International Business Machines Corporation Method for forming a planarized integrated circuit
JPS5982746A (ja) * 1982-11-04 1984-05-12 Toshiba Corp 半導体装置の電極配線方法
US4470874A (en) * 1983-12-15 1984-09-11 International Business Machines Corporation Planarization of multi-level interconnected metallization system
US4515668A (en) * 1984-04-25 1985-05-07 Honeywell Inc. Method of forming a dielectric layer comprising a gettering material
US4797375A (en) * 1984-10-05 1989-01-10 Honeywell Inc. Fabrication of metal interconnect for semiconductor device
JPH0697660B2 (ja) * 1985-03-23 1994-11-30 日本電信電話株式会社 薄膜形成方法
DE3650612T2 (de) * 1985-05-13 1997-08-21 Nippon Telegraph & Telephone Verfahren zur Planarisierung einer dünnen Al-Schicht
US4690746A (en) * 1986-02-24 1987-09-01 Genus, Inc. Interlayer dielectric process
US4732658A (en) * 1986-12-03 1988-03-22 Honeywell Inc. Planarization of silicon semiconductor devices
US4756810A (en) * 1986-12-04 1988-07-12 Machine Technology, Inc. Deposition and planarizing methods and apparatus
US4874493A (en) * 1988-03-28 1989-10-17 Microelectronics And Computer Technology Corporation Method of deposition of metal into cavities on a substrate
US5545594A (en) * 1993-10-26 1996-08-13 Yazaki Meter Co., Ltd. Semiconductor sensor anodic-bonding process, wherein bonding of corrugation is prevented
US5393703A (en) * 1993-11-12 1995-02-28 Motorola, Inc. Process for forming a conductive layer for semiconductor devices
JP3971213B2 (ja) * 2002-03-11 2007-09-05 アルプス電気株式会社 キーボード入力装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE526527A (https=) * 1953-02-17
US3287612A (en) * 1963-12-17 1966-11-22 Bell Telephone Labor Inc Semiconductor contacts and protective coatings for planar devices
NL134170C (https=) * 1963-12-17 1900-01-01
US3479269A (en) * 1967-01-04 1969-11-18 Bell Telephone Labor Inc Method for sputter etching using a high frequency negative pulse train
GB1299452A (en) * 1969-02-21 1972-12-13 Smiths Industries Ltd Improvements in or relating to methods of machining
US3661761A (en) * 1969-06-02 1972-05-09 Ibm Rf sputtering apparatus for promoting resputtering of film during deposition
US3661747A (en) * 1969-08-11 1972-05-09 Bell Telephone Labor Inc Method for etching thin film materials by direct cathodic back sputtering
US3676317A (en) * 1970-10-23 1972-07-11 Stromberg Datagraphix Inc Sputter etching process

Also Published As

Publication number Publication date
DE2164838B2 (de) 1980-04-24
FR2119930A1 (https=) 1972-08-11
GB1361214A (en) 1974-07-24
FR2119930B1 (https=) 1974-08-19
US3983022A (en) 1976-09-28
DE2164838A1 (de) 1972-07-20

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Legal Events

Date Code Title Description
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee