DE2147009A1 - Halbleiterbauteil - Google Patents
HalbleiterbauteilInfo
- Publication number
- DE2147009A1 DE2147009A1 DE19712147009 DE2147009A DE2147009A1 DE 2147009 A1 DE2147009 A1 DE 2147009A1 DE 19712147009 DE19712147009 DE 19712147009 DE 2147009 A DE2147009 A DE 2147009A DE 2147009 A1 DE2147009 A1 DE 2147009A1
- Authority
- DE
- Germany
- Prior art keywords
- region
- semiconductor
- base
- junction
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 230000001681 protective effect Effects 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims description 7
- 230000000694 effects Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H01L29/00—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H01L27/00—
-
- H01L29/73—
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10100170A | 1970-12-23 | 1970-12-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2147009A1 true DE2147009A1 (de) | 1972-07-13 |
Family
ID=22282615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19712147009 Pending DE2147009A1 (de) | 1970-12-23 | 1971-09-21 | Halbleiterbauteil |
Country Status (8)
Country | Link |
---|---|
AU (1) | AU463787B2 (fr) |
BE (1) | BE772640A (fr) |
CA (1) | CA932072A (fr) |
DE (1) | DE2147009A1 (fr) |
FR (1) | FR2118889B1 (fr) |
GB (1) | GB1362852A (fr) |
NL (1) | NL7111842A (fr) |
SE (1) | SE376688B (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3832750A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterbauelement |
DE3832732A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterdiode |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4833509A (en) * | 1983-10-31 | 1989-05-23 | Burr-Brown Corporation | Integrated circuit reference diode and fabrication method therefor |
IT1214805B (it) * | 1984-08-21 | 1990-01-18 | Ates Componenti Elettron | Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown |
JP2701502B2 (ja) * | 1990-01-25 | 1998-01-21 | 日産自動車株式会社 | 半導体装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1153495A (en) * | 1966-07-25 | 1969-05-29 | Associated Semiconductor Mft | Improvements in and relating to Semiconductor Devices |
-
1971
- 1971-08-12 CA CA120455A patent/CA932072A/en not_active Expired
- 1971-08-27 NL NL7111842A patent/NL7111842A/xx unknown
- 1971-09-15 BE BE772640A patent/BE772640A/fr unknown
- 1971-09-15 GB GB4304971A patent/GB1362852A/en not_active Expired
- 1971-09-20 FR FR7133691A patent/FR2118889B1/fr not_active Expired
- 1971-09-21 DE DE19712147009 patent/DE2147009A1/de active Pending
- 1971-09-22 SE SE1197571A patent/SE376688B/xx unknown
- 1971-09-22 AU AU33790/71A patent/AU463787B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3832750A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterbauelement |
DE3832732A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterdiode |
Also Published As
Publication number | Publication date |
---|---|
FR2118889B1 (fr) | 1977-04-22 |
FR2118889A1 (fr) | 1972-08-04 |
BE772640A (fr) | 1972-01-17 |
AU3379071A (en) | 1973-03-29 |
CA932072A (en) | 1973-08-14 |
GB1362852A (en) | 1974-08-07 |
NL7111842A (fr) | 1972-06-27 |
SE376688B (fr) | 1975-06-02 |
AU463787B2 (en) | 1975-08-07 |
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