AU463787B2 - High frequency planar transistor employing highly resistive guard ring - Google Patents
High frequency planar transistor employing highly resistive guard ringInfo
- Publication number
- AU463787B2 AU463787B2 AU33790/71A AU3379071A AU463787B2 AU 463787 B2 AU463787 B2 AU 463787B2 AU 33790/71 A AU33790/71 A AU 33790/71A AU 3379071 A AU3379071 A AU 3379071A AU 463787 B2 AU463787 B2 AU 463787B2
- Authority
- AU
- Australia
- Prior art keywords
- high frequency
- guard ring
- planar transistor
- highly resistive
- frequency planar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10100170A | 1970-12-23 | 1970-12-23 | |
| USUS101001 | 1970-12-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU3379071A AU3379071A (en) | 1973-03-29 |
| AU463787B2 true AU463787B2 (en) | 1975-08-07 |
Family
ID=22282615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU33790/71A Expired AU463787B2 (en) | 1970-12-23 | 1971-09-22 | High frequency planar transistor employing highly resistive guard ring |
Country Status (8)
| Country | Link |
|---|---|
| AU (1) | AU463787B2 (fr) |
| BE (1) | BE772640A (fr) |
| CA (1) | CA932072A (fr) |
| DE (1) | DE2147009A1 (fr) |
| FR (1) | FR2118889B1 (fr) |
| GB (1) | GB1362852A (fr) |
| NL (1) | NL7111842A (fr) |
| SE (1) | SE376688B (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4833509A (en) * | 1983-10-31 | 1989-05-23 | Burr-Brown Corporation | Integrated circuit reference diode and fabrication method therefor |
| IT1214805B (it) * | 1984-08-21 | 1990-01-18 | Ates Componenti Elettron | Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown |
| DE3832750A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterbauelement |
| DE3832732A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterdiode |
| JP2701502B2 (ja) * | 1990-01-25 | 1998-01-21 | 日産自動車株式会社 | 半導体装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1153495A (en) * | 1966-07-25 | 1969-05-29 | Associated Semiconductor Mft | Improvements in and relating to Semiconductor Devices |
-
1971
- 1971-08-12 CA CA120455A patent/CA932072A/en not_active Expired
- 1971-08-27 NL NL7111842A patent/NL7111842A/xx unknown
- 1971-09-15 BE BE772640A patent/BE772640A/fr unknown
- 1971-09-15 GB GB4304971A patent/GB1362852A/en not_active Expired
- 1971-09-20 FR FR7133691A patent/FR2118889B1/fr not_active Expired
- 1971-09-21 DE DE19712147009 patent/DE2147009A1/de active Pending
- 1971-09-22 AU AU33790/71A patent/AU463787B2/en not_active Expired
- 1971-09-22 SE SE1197571A patent/SE376688B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2118889B1 (fr) | 1977-04-22 |
| BE772640A (fr) | 1972-01-17 |
| GB1362852A (en) | 1974-08-07 |
| CA932072A (en) | 1973-08-14 |
| DE2147009A1 (de) | 1972-07-13 |
| SE376688B (fr) | 1975-06-02 |
| AU3379071A (en) | 1973-03-29 |
| NL7111842A (fr) | 1972-06-27 |
| FR2118889A1 (fr) | 1972-08-04 |
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