BE772640A - Transistor planar a haute frequence - Google Patents

Transistor planar a haute frequence

Info

Publication number
BE772640A
BE772640A BE772640A BE772640A BE772640A BE 772640 A BE772640 A BE 772640A BE 772640 A BE772640 A BE 772640A BE 772640 A BE772640 A BE 772640A BE 772640 A BE772640 A BE 772640A
Authority
BE
Belgium
Prior art keywords
high frequency
planar transistor
frequency planar
transistor
planar
Prior art date
Application number
BE772640A
Other languages
English (en)
Inventor
P J Kannam
J A Olmstead
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE772640A publication Critical patent/BE772640A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
BE772640A 1970-12-23 1971-09-15 Transistor planar a haute frequence BE772640A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10100170A 1970-12-23 1970-12-23

Publications (1)

Publication Number Publication Date
BE772640A true BE772640A (fr) 1972-01-17

Family

ID=22282615

Family Applications (1)

Application Number Title Priority Date Filing Date
BE772640A BE772640A (fr) 1970-12-23 1971-09-15 Transistor planar a haute frequence

Country Status (8)

Country Link
AU (1) AU463787B2 (fr)
BE (1) BE772640A (fr)
CA (1) CA932072A (fr)
DE (1) DE2147009A1 (fr)
FR (1) FR2118889B1 (fr)
GB (1) GB1362852A (fr)
NL (1) NL7111842A (fr)
SE (1) SE376688B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833509A (en) * 1983-10-31 1989-05-23 Burr-Brown Corporation Integrated circuit reference diode and fabrication method therefor
IT1214805B (it) * 1984-08-21 1990-01-18 Ates Componenti Elettron Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown
DE3832750A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterbauelement
DE3832732A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
JP2701502B2 (ja) * 1990-01-25 1998-01-21 日産自動車株式会社 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153495A (en) * 1966-07-25 1969-05-29 Associated Semiconductor Mft Improvements in and relating to Semiconductor Devices

Also Published As

Publication number Publication date
FR2118889B1 (fr) 1977-04-22
GB1362852A (en) 1974-08-07
AU463787B2 (en) 1975-08-07
CA932072A (en) 1973-08-14
DE2147009A1 (de) 1972-07-13
SE376688B (fr) 1975-06-02
AU3379071A (en) 1973-03-29
NL7111842A (fr) 1972-06-27
FR2118889A1 (fr) 1972-08-04

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