BE772640A - HIGH FREQUENCY PLANAR TRANSISTOR - Google Patents
HIGH FREQUENCY PLANAR TRANSISTORInfo
- Publication number
- BE772640A BE772640A BE772640A BE772640A BE772640A BE 772640 A BE772640 A BE 772640A BE 772640 A BE772640 A BE 772640A BE 772640 A BE772640 A BE 772640A BE 772640 A BE772640 A BE 772640A
- Authority
- BE
- Belgium
- Prior art keywords
- high frequency
- planar transistor
- frequency planar
- transistor
- planar
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10100170A | 1970-12-23 | 1970-12-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE772640A true BE772640A (en) | 1972-01-17 |
Family
ID=22282615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE772640A BE772640A (en) | 1970-12-23 | 1971-09-15 | HIGH FREQUENCY PLANAR TRANSISTOR |
Country Status (8)
Country | Link |
---|---|
AU (1) | AU463787B2 (en) |
BE (1) | BE772640A (en) |
CA (1) | CA932072A (en) |
DE (1) | DE2147009A1 (en) |
FR (1) | FR2118889B1 (en) |
GB (1) | GB1362852A (en) |
NL (1) | NL7111842A (en) |
SE (1) | SE376688B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4833509A (en) * | 1983-10-31 | 1989-05-23 | Burr-Brown Corporation | Integrated circuit reference diode and fabrication method therefor |
IT1214805B (en) * | 1984-08-21 | 1990-01-18 | Ates Componenti Elettron | SEMICONDUCTOR WITH JUNPROCESS DEVICES FOR THE MANUFACTURE OF VARIABLE CHARGE CONCENTRATION PLANAR DIRECTIONS AND VERY HIGH BREAKDOWN VOLTAGE |
DE3832732A1 (en) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | PERFORMANCE SEMICONDUCTOR DIODE |
DE3832750A1 (en) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | PERFORMANCE SEMICONDUCTOR COMPONENT |
JP2701502B2 (en) * | 1990-01-25 | 1998-01-21 | 日産自動車株式会社 | Semiconductor device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1153495A (en) * | 1966-07-25 | 1969-05-29 | Associated Semiconductor Mft | Improvements in and relating to Semiconductor Devices |
-
1971
- 1971-08-12 CA CA120455A patent/CA932072A/en not_active Expired
- 1971-08-27 NL NL7111842A patent/NL7111842A/xx unknown
- 1971-09-15 GB GB4304971A patent/GB1362852A/en not_active Expired
- 1971-09-15 BE BE772640A patent/BE772640A/en unknown
- 1971-09-20 FR FR7133691A patent/FR2118889B1/fr not_active Expired
- 1971-09-21 DE DE19712147009 patent/DE2147009A1/en active Pending
- 1971-09-22 SE SE1197571A patent/SE376688B/xx unknown
- 1971-09-22 AU AU33790/71A patent/AU463787B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL7111842A (en) | 1972-06-27 |
AU463787B2 (en) | 1975-08-07 |
CA932072A (en) | 1973-08-14 |
AU3379071A (en) | 1973-03-29 |
FR2118889A1 (en) | 1972-08-04 |
SE376688B (en) | 1975-06-02 |
GB1362852A (en) | 1974-08-07 |
DE2147009A1 (en) | 1972-07-13 |
FR2118889B1 (en) | 1977-04-22 |
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