DE2136515A1 - Bipolare Halbleiter Speicherzelle - Google Patents

Bipolare Halbleiter Speicherzelle

Info

Publication number
DE2136515A1
DE2136515A1 DE19712136515 DE2136515A DE2136515A1 DE 2136515 A1 DE2136515 A1 DE 2136515A1 DE 19712136515 DE19712136515 DE 19712136515 DE 2136515 A DE2136515 A DE 2136515A DE 2136515 A1 DE2136515 A1 DE 2136515A1
Authority
DE
Germany
Prior art keywords
transistor
collector
state
emitter
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712136515
Other languages
German (de)
English (en)
Inventor
Panayotis C Scottsdale Hart jun Thomas W Phoenix Ariz Economopoulos (VStA) P
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEMICONDUCTOR ELECTRONOC MEMOR
Original Assignee
SEMICONDUCTOR ELECTRONOC MEMOR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEMICONDUCTOR ELECTRONOC MEMOR filed Critical SEMICONDUCTOR ELECTRONOC MEMOR
Publication of DE2136515A1 publication Critical patent/DE2136515A1/de
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
DE19712136515 1970-07-21 1971-07-21 Bipolare Halbleiter Speicherzelle Pending DE2136515A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5677870A 1970-07-21 1970-07-21

Publications (1)

Publication Number Publication Date
DE2136515A1 true DE2136515A1 (de) 1972-01-27

Family

ID=22006530

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712136515 Pending DE2136515A1 (de) 1970-07-21 1971-07-21 Bipolare Halbleiter Speicherzelle

Country Status (3)

Country Link
US (1) US3636377A (enExample)
DE (1) DE2136515A1 (enExample)
FR (1) FR2099489A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3729721A (en) * 1970-09-23 1973-04-24 Siemens Ag Circuit arrangement for reading and writing in a bipolar semiconductor memory
US3725878A (en) * 1970-10-30 1973-04-03 Ibm Memory cell circuit
US3736573A (en) * 1971-11-11 1973-05-29 Ibm Resistor sensing bit switch
US3706978A (en) * 1971-11-11 1972-12-19 Ibm Functional storage array
FR2443118A1 (fr) * 1978-11-30 1980-06-27 Ibm France Dispositif pour l'alimentation des memoires monolithiques
JPS5833634B2 (ja) * 1979-02-28 1983-07-21 富士通株式会社 メモリセルアレイの駆動方式
DE3371960D1 (en) * 1983-08-17 1987-07-09 Ibm Deutschland Latched phase splitter
US4596002A (en) * 1984-06-25 1986-06-17 International Business Machines Corporation Random access memory RAM employing complementary transistor switch (CTS) memory cells
US4578779A (en) * 1984-06-25 1986-03-25 International Business Machines Corporation Voltage mode operation scheme for bipolar arrays
US4598390A (en) * 1984-06-25 1986-07-01 International Business Machines Corporation Random access memory RAM employing complementary transistor switch (CTS) memory cells
JPH03231320A (ja) * 1990-02-06 1991-10-15 Mitsubishi Electric Corp マイクロコンピュータシステム

Also Published As

Publication number Publication date
US3636377A (en) 1972-01-18
FR2099489A1 (enExample) 1972-03-17

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