DE2133982C2 - Integriertes Halbleiterbauelement mit einer von einer vergrabenen Schicht gebildeten leitenden Verbindung - Google Patents

Integriertes Halbleiterbauelement mit einer von einer vergrabenen Schicht gebildeten leitenden Verbindung

Info

Publication number
DE2133982C2
DE2133982C2 DE2133982A DE2133982A DE2133982C2 DE 2133982 C2 DE2133982 C2 DE 2133982C2 DE 2133982 A DE2133982 A DE 2133982A DE 2133982 A DE2133982 A DE 2133982A DE 2133982 C2 DE2133982 C2 DE 2133982C2
Authority
DE
Germany
Prior art keywords
zone
layer
buried layer
substrate
integrated semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2133982A
Other languages
German (de)
English (en)
Other versions
DE2133982A1 (de
Inventor
Else Eindhoven Kooi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7010208A external-priority patent/NL7010208A/xx
Priority claimed from NLAANVRAGE7010205,A external-priority patent/NL169936C/xx
Priority claimed from NLAANVRAGE7010204,A external-priority patent/NL170902C/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2133982A1 publication Critical patent/DE2133982A1/de
Application granted granted Critical
Publication of DE2133982C2 publication Critical patent/DE2133982C2/de
Expired legal-status Critical Current

Links

Classifications

    • H10P14/61—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H10W10/00—
    • H10W10/01—
    • H10W10/012—
    • H10W10/0121—
    • H10W10/0126—
    • H10W10/13—
    • H10W15/00—
    • H10W15/01—

Landscapes

  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
DE2133982A 1970-07-10 1971-07-08 Integriertes Halbleiterbauelement mit einer von einer vergrabenen Schicht gebildeten leitenden Verbindung Expired DE2133982C2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL7010208A NL7010208A (enExample) 1966-10-05 1970-07-10
NLAANVRAGE7010205,A NL169936C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.
NLAANVRAGE7010204,A NL170902C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.

Publications (2)

Publication Number Publication Date
DE2133982A1 DE2133982A1 (de) 1972-01-13
DE2133982C2 true DE2133982C2 (de) 1984-12-13

Family

ID=27351584

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2133982A Expired DE2133982C2 (de) 1970-07-10 1971-07-08 Integriertes Halbleiterbauelement mit einer von einer vergrabenen Schicht gebildeten leitenden Verbindung

Country Status (9)

Country Link
JP (1) JPS517550B1 (enExample)
BE (1) BE769735A (enExample)
CA (1) CA1102012A (enExample)
CH (1) CH533364A (enExample)
DE (1) DE2133982C2 (enExample)
ES (2) ES393041A1 (enExample)
GB (1) GB1353997A (enExample)
HK (1) HK58576A (enExample)
SE (1) SE368480B (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1095413A (enExample) * 1964-12-24

Also Published As

Publication number Publication date
SE368480B (enExample) 1974-07-01
ES393041A1 (es) 1975-05-16
GB1353997A (en) 1974-05-22
HK58576A (en) 1976-10-01
BE769735A (fr) 1972-01-10
CH533364A (de) 1973-01-31
ES393040A1 (es) 1974-05-16
JPS517550B1 (enExample) 1976-03-09
CA1102012A (en) 1981-05-26
DE2133982A1 (de) 1972-01-13

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Legal Events

Date Code Title Description
8181 Inventor (new situation)

Free format text: KOOI, ELSE, EINDHOVEN, NL

D2 Grant after examination
8364 No opposition during term of opposition