DE2122065A1 - Photoelektrischer Detektor - Google Patents
Photoelektrischer DetektorInfo
- Publication number
- DE2122065A1 DE2122065A1 DE19712122065 DE2122065A DE2122065A1 DE 2122065 A1 DE2122065 A1 DE 2122065A1 DE 19712122065 DE19712122065 DE 19712122065 DE 2122065 A DE2122065 A DE 2122065A DE 2122065 A1 DE2122065 A1 DE 2122065A1
- Authority
- DE
- Germany
- Prior art keywords
- active
- layer
- dielectric material
- detector
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007704 transition Effects 0.000 claims description 31
- 239000003989 dielectric material Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 6
- 230000000712 assembly Effects 0.000 claims description 5
- 238000000429 assembly Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000003491 array Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 239000000969 carrier Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 33
- 230000008569 process Effects 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000006862 quantum yield reaction Methods 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012549 training Methods 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007794 irritation Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 231100000289 photo-effect Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/337—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3466870A | 1970-05-05 | 1970-05-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2122065A1 true DE2122065A1 (de) | 1971-11-18 |
Family
ID=21877849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712122065 Pending DE2122065A1 (de) | 1970-05-05 | 1971-05-04 | Photoelektrischer Detektor |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3704375A (enExample) |
| BE (1) | BE766743A (enExample) |
| CA (1) | CA961968A (enExample) |
| CH (1) | CH524896A (enExample) |
| DE (1) | DE2122065A1 (enExample) |
| FR (1) | FR2088357B1 (enExample) |
| GB (1) | GB1315300A (enExample) |
| NL (1) | NL7103056A (enExample) |
| SE (1) | SE348886B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5349981A (en) * | 1976-10-18 | 1978-05-06 | Nippon Telegr & Teleph Corp <Ntt> | Photoelectric conversion element |
| JPS5980964A (ja) * | 1982-11-01 | 1984-05-10 | Toshiba Corp | 光電変換素子 |
| DE19607047C2 (de) * | 1996-02-24 | 1999-03-25 | Gen Semiconductor Ireland Macr | Verfahren zum Herstellen von Halbleiterelementen mit aktiven Strukturen |
| DE102004001556A1 (de) * | 2004-01-10 | 2005-08-04 | Robert Bosch Gmbh | Nachtsichtsystem für Kraftfahrzeuge mit partiellem optischem Filter |
| DE102004013850B4 (de) * | 2004-03-20 | 2006-12-21 | Robert Bosch Gmbh | Filterchip mit integrierter Blende |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3344278A (en) * | 1963-06-14 | 1967-09-26 | Int Rectifier Corp | Data readout system utilizing light sensitive junction switch members |
| US3366789A (en) * | 1964-02-12 | 1968-01-30 | American Cyanamid Co | Calibration of ultraviolet radiation sources |
| GB1084705A (en) * | 1965-08-27 | 1967-09-27 | Standard Telephones Cables Ltd | Semiconductor planar optical mixer systems |
| US3478214A (en) * | 1966-02-16 | 1969-11-11 | North American Rockwell | Photodetector responsive to light intensity in different spectral bands |
| US3435232A (en) * | 1966-03-03 | 1969-03-25 | Hewlett Packard Co | Beam position detector |
| US3488636A (en) * | 1966-08-22 | 1970-01-06 | Fairchild Camera Instr Co | Optically programmable read only memory |
| US3539883A (en) * | 1967-03-15 | 1970-11-10 | Ion Physics Corp | Antireflection coatings for semiconductor devices |
| NL6709192A (enExample) * | 1967-07-01 | 1969-01-03 | ||
| US3483096A (en) * | 1968-04-25 | 1969-12-09 | Avco Corp | Process for making an indium antimonide infrared detector contact |
-
1970
- 1970-05-05 US US34668A patent/US3704375A/en not_active Expired - Lifetime
- 1970-05-30 GB GB2619871*A patent/GB1315300A/en not_active Expired
-
1971
- 1971-02-26 SE SE02519/71A patent/SE348886B/xx unknown
- 1971-03-08 NL NL7103056A patent/NL7103056A/xx unknown
- 1971-03-22 CA CA108,380A patent/CA961968A/en not_active Expired
- 1971-05-04 CH CH655271A patent/CH524896A/de not_active IP Right Cessation
- 1971-05-04 DE DE19712122065 patent/DE2122065A1/de active Pending
- 1971-05-05 BE BE766743A patent/BE766743A/xx unknown
- 1971-05-05 FR FR7116232A patent/FR2088357B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1315300A (en) | 1973-05-02 |
| FR2088357A1 (enExample) | 1972-01-07 |
| CA961968A (en) | 1975-01-28 |
| FR2088357B1 (enExample) | 1978-02-24 |
| NL7103056A (enExample) | 1971-11-09 |
| US3704375A (en) | 1972-11-28 |
| BE766743A (fr) | 1971-11-05 |
| CH524896A (de) | 1972-06-30 |
| SE348886B (enExample) | 1972-09-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHA | Expiration of time for request for examination |