NL6709192A - - Google Patents

Info

Publication number
NL6709192A
NL6709192A NL6709192A NL6709192A NL6709192A NL 6709192 A NL6709192 A NL 6709192A NL 6709192 A NL6709192 A NL 6709192A NL 6709192 A NL6709192 A NL 6709192A NL 6709192 A NL6709192 A NL 6709192A
Authority
NL
Netherlands
Application number
NL6709192A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6709192A priority Critical patent/NL6709192A/xx
Priority to US735703A priority patent/US3529217A/en
Priority to DE1764565A priority patent/DE1764565C3/de
Priority to SE08770/68A priority patent/SE352195B/xx
Priority to GB1231493D priority patent/GB1231493A/en
Priority to CH969568A priority patent/CH492306A/de
Priority to AT623568A priority patent/AT284924B/de
Priority to BE717461D priority patent/BE717461A/xx
Priority to FR1602803D priority patent/FR1602803A/fr
Priority to JP43045539A priority patent/JPS5110075B1/ja
Publication of NL6709192A publication Critical patent/NL6709192A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
NL6709192A 1967-07-01 1967-07-01 NL6709192A (enExample)

Priority Applications (10)

Application Number Priority Date Filing Date Title
NL6709192A NL6709192A (enExample) 1967-07-01 1967-07-01
US735703A US3529217A (en) 1967-07-01 1968-06-10 Photosensitive semiconductor device
DE1764565A DE1764565C3 (de) 1967-07-01 1968-06-27 Strahlungsempfindliches Halbleiterbauelement
SE08770/68A SE352195B (enExample) 1967-07-01 1968-06-27
GB1231493D GB1231493A (enExample) 1967-07-01 1968-06-28
CH969568A CH492306A (de) 1967-07-01 1968-06-28 Strahlungsempfindliches Halbleiterbauelement
AT623568A AT284924B (de) 1967-07-01 1968-06-28 Strahlungsempfindliches Halbleiterbauelement
BE717461D BE717461A (enExample) 1967-07-01 1968-07-01
FR1602803D FR1602803A (enExample) 1967-07-01 1968-07-01
JP43045539A JPS5110075B1 (enExample) 1967-07-01 1968-07-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6709192A NL6709192A (enExample) 1967-07-01 1967-07-01

Publications (1)

Publication Number Publication Date
NL6709192A true NL6709192A (enExample) 1969-01-03

Family

ID=19800600

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6709192A NL6709192A (enExample) 1967-07-01 1967-07-01

Country Status (10)

Country Link
US (1) US3529217A (enExample)
JP (1) JPS5110075B1 (enExample)
AT (1) AT284924B (enExample)
BE (1) BE717461A (enExample)
CH (1) CH492306A (enExample)
DE (1) DE1764565C3 (enExample)
FR (1) FR1602803A (enExample)
GB (1) GB1231493A (enExample)
NL (1) NL6709192A (enExample)
SE (1) SE352195B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836998A (en) * 1969-01-16 1974-09-17 Signetics Corp High voltage bipolar semiconductor device and integrated circuit using the same and method
US3704375A (en) * 1970-05-05 1972-11-28 Barnes Eng Co Monolithic detector construction of photodetectors
JPS5521470B1 (enExample) * 1971-03-10 1980-06-10
US3893150A (en) * 1971-04-22 1975-07-01 Philips Corp Semiconductor device having an electroluminescent diode
US3928091A (en) * 1971-09-27 1975-12-23 Hitachi Ltd Method for manufacturing a semiconductor device utilizing selective oxidation
FR2158128B1 (enExample) * 1971-11-04 1976-10-29 Comp Generale Electricite
JPS5641186B2 (enExample) * 1972-03-03 1981-09-26
US3952324A (en) * 1973-01-02 1976-04-20 Hughes Aircraft Company Solar panel mounted blocking diode
FR2228299B1 (enExample) * 1973-05-04 1977-09-02 Radiotechnique Compelec
US3893229A (en) * 1973-10-29 1975-07-08 Gen Electric Mounting for light-emitting diode pellet and method for the fabrication thereof
FR2253277B1 (enExample) * 1973-11-30 1977-08-12 Silec Semi Conducteurs
GB1503223A (en) * 1975-07-26 1978-03-08 Int Computers Ltd Formation of buried layers in a substrate
US4107721A (en) * 1977-01-26 1978-08-15 Bell Telephone Laboratories, Incorporated Phototransistor
US4157560A (en) * 1977-12-30 1979-06-05 International Business Machines Corporation Photo detector cell
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
CA1200622A (en) * 1981-12-04 1986-02-11 Western Electric Company, Incorporated Collector for radiation-generated current carriers in a semiconductor structure
JPS58138187A (ja) * 1982-02-12 1983-08-16 Toshiba Corp 固体イメ−ジセンサ
US4794443A (en) * 1984-05-28 1988-12-27 Canon Kabushiki Kaisha Semiconductor device and process for producing same
JPS62109376A (ja) * 1985-11-08 1987-05-20 Nissan Motor Co Ltd 受光用半導体装置
JP6021019B2 (ja) * 2011-06-09 2016-11-02 パナソニックＩｐマネジメント株式会社 光学素子とその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3380153A (en) * 1965-09-30 1968-04-30 Westinghouse Electric Corp Method of forming a semiconductor integrated circuit that includes a fast switching transistor

Also Published As

Publication number Publication date
DE1764565C3 (de) 1978-12-07
DE1764565B2 (de) 1978-03-30
FR1602803A (enExample) 1971-02-01
AT284924B (de) 1970-10-12
DE1764565A1 (de) 1971-08-26
US3529217A (en) 1970-09-15
JPS5110075B1 (enExample) 1976-04-01
BE717461A (enExample) 1969-01-02
SE352195B (enExample) 1972-12-18
CH492306A (de) 1970-06-15
GB1231493A (enExample) 1971-05-12

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