JPS5110075B1 - - Google Patents
Info
- Publication number
- JPS5110075B1 JPS5110075B1 JP43045539A JP4553968A JPS5110075B1 JP S5110075 B1 JPS5110075 B1 JP S5110075B1 JP 43045539 A JP43045539 A JP 43045539A JP 4553968 A JP4553968 A JP 4553968A JP S5110075 B1 JPS5110075 B1 JP S5110075B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
Landscapes
- Light Receiving Elements (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6709192A NL6709192A (enExample) | 1967-07-01 | 1967-07-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5110075B1 true JPS5110075B1 (enExample) | 1976-04-01 |
Family
ID=19800600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP43045539A Pending JPS5110075B1 (enExample) | 1967-07-01 | 1968-07-01 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3529217A (enExample) |
| JP (1) | JPS5110075B1 (enExample) |
| AT (1) | AT284924B (enExample) |
| BE (1) | BE717461A (enExample) |
| CH (1) | CH492306A (enExample) |
| DE (1) | DE1764565C3 (enExample) |
| FR (1) | FR1602803A (enExample) |
| GB (1) | GB1231493A (enExample) |
| NL (1) | NL6709192A (enExample) |
| SE (1) | SE352195B (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3836998A (en) * | 1969-01-16 | 1974-09-17 | Signetics Corp | High voltage bipolar semiconductor device and integrated circuit using the same and method |
| US3704375A (en) * | 1970-05-05 | 1972-11-28 | Barnes Eng Co | Monolithic detector construction of photodetectors |
| JPS5521470B1 (enExample) * | 1971-03-10 | 1980-06-10 | ||
| US3893150A (en) * | 1971-04-22 | 1975-07-01 | Philips Corp | Semiconductor device having an electroluminescent diode |
| US3928091A (en) * | 1971-09-27 | 1975-12-23 | Hitachi Ltd | Method for manufacturing a semiconductor device utilizing selective oxidation |
| FR2158128B1 (enExample) * | 1971-11-04 | 1976-10-29 | Comp Generale Electricite | |
| JPS5641186B2 (enExample) * | 1972-03-03 | 1981-09-26 | ||
| US3952324A (en) * | 1973-01-02 | 1976-04-20 | Hughes Aircraft Company | Solar panel mounted blocking diode |
| FR2228299B1 (enExample) * | 1973-05-04 | 1977-09-02 | Radiotechnique Compelec | |
| US3893229A (en) * | 1973-10-29 | 1975-07-08 | Gen Electric | Mounting for light-emitting diode pellet and method for the fabrication thereof |
| FR2253277B1 (enExample) * | 1973-11-30 | 1977-08-12 | Silec Semi Conducteurs | |
| GB1503223A (en) * | 1975-07-26 | 1978-03-08 | Int Computers Ltd | Formation of buried layers in a substrate |
| US4107721A (en) * | 1977-01-26 | 1978-08-15 | Bell Telephone Laboratories, Incorporated | Phototransistor |
| US4157560A (en) * | 1977-12-30 | 1979-06-05 | International Business Machines Corporation | Photo detector cell |
| DE2922250A1 (de) * | 1979-05-31 | 1980-12-11 | Siemens Ag | Lichtsteuerbarer transistor |
| CA1200622A (en) * | 1981-12-04 | 1986-02-11 | Western Electric Company, Incorporated | Collector for radiation-generated current carriers in a semiconductor structure |
| JPS58138187A (ja) * | 1982-02-12 | 1983-08-16 | Toshiba Corp | 固体イメ−ジセンサ |
| US4794443A (en) * | 1984-05-28 | 1988-12-27 | Canon Kabushiki Kaisha | Semiconductor device and process for producing same |
| JPS62109376A (ja) * | 1985-11-08 | 1987-05-20 | Nissan Motor Co Ltd | 受光用半導体装置 |
| JP6021019B2 (ja) * | 2011-06-09 | 2016-11-02 | パナソニックＩｐマネジメント株式会社 | 光学素子とその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3380153A (en) * | 1965-09-30 | 1968-04-30 | Westinghouse Electric Corp | Method of forming a semiconductor integrated circuit that includes a fast switching transistor |
-
1967
- 1967-07-01 NL NL6709192A patent/NL6709192A/xx unknown
-
1968
- 1968-06-10 US US735703A patent/US3529217A/en not_active Expired - Lifetime
- 1968-06-27 SE SE08770/68A patent/SE352195B/xx unknown
- 1968-06-27 DE DE1764565A patent/DE1764565C3/de not_active Expired
- 1968-06-28 AT AT623568A patent/AT284924B/de not_active IP Right Cessation
- 1968-06-28 GB GB1231493D patent/GB1231493A/en not_active Expired
- 1968-06-28 CH CH969568A patent/CH492306A/de not_active IP Right Cessation
- 1968-07-01 JP JP43045539A patent/JPS5110075B1/ja active Pending
- 1968-07-01 BE BE717461D patent/BE717461A/xx not_active IP Right Cessation
- 1968-07-01 FR FR1602803D patent/FR1602803A/fr not_active Expired
Non-Patent Citations (1)
| Title |
|---|
| THE ELECTRONIC ENGINEER#M12=1966 * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1764565C3 (de) | 1978-12-07 |
| DE1764565B2 (de) | 1978-03-30 |
| FR1602803A (enExample) | 1971-02-01 |
| AT284924B (de) | 1970-10-12 |
| DE1764565A1 (de) | 1971-08-26 |
| US3529217A (en) | 1970-09-15 |
| NL6709192A (enExample) | 1969-01-03 |
| BE717461A (enExample) | 1969-01-02 |
| SE352195B (enExample) | 1972-12-18 |
| CH492306A (de) | 1970-06-15 |
| GB1231493A (enExample) | 1971-05-12 |