DE1764565C3 - Strahlungsempfindliches Halbleiterbauelement - Google Patents

Strahlungsempfindliches Halbleiterbauelement

Info

Publication number
DE1764565C3
DE1764565C3 DE1764565A DE1764565A DE1764565C3 DE 1764565 C3 DE1764565 C3 DE 1764565C3 DE 1764565 A DE1764565 A DE 1764565A DE 1764565 A DE1764565 A DE 1764565A DE 1764565 C3 DE1764565 C3 DE 1764565C3
Authority
DE
Germany
Prior art keywords
junction
zone
radiation
layer
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1764565A
Other languages
German (de)
English (en)
Other versions
DE1764565B2 (de
DE1764565A1 (de
Inventor
Johannes Gerrit Van Eindhoven Santen (Niederlande)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1764565A1 publication Critical patent/DE1764565A1/de
Publication of DE1764565B2 publication Critical patent/DE1764565B2/de
Application granted granted Critical
Publication of DE1764565C3 publication Critical patent/DE1764565C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated

Landscapes

  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
DE1764565A 1967-07-01 1968-06-27 Strahlungsempfindliches Halbleiterbauelement Expired DE1764565C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6709192A NL6709192A (enExample) 1967-07-01 1967-07-01

Publications (3)

Publication Number Publication Date
DE1764565A1 DE1764565A1 (de) 1971-08-26
DE1764565B2 DE1764565B2 (de) 1978-03-30
DE1764565C3 true DE1764565C3 (de) 1978-12-07

Family

ID=19800600

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1764565A Expired DE1764565C3 (de) 1967-07-01 1968-06-27 Strahlungsempfindliches Halbleiterbauelement

Country Status (10)

Country Link
US (1) US3529217A (enExample)
JP (1) JPS5110075B1 (enExample)
AT (1) AT284924B (enExample)
BE (1) BE717461A (enExample)
CH (1) CH492306A (enExample)
DE (1) DE1764565C3 (enExample)
FR (1) FR1602803A (enExample)
GB (1) GB1231493A (enExample)
NL (1) NL6709192A (enExample)
SE (1) SE352195B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836998A (en) * 1969-01-16 1974-09-17 Signetics Corp High voltage bipolar semiconductor device and integrated circuit using the same and method
US3704375A (en) * 1970-05-05 1972-11-28 Barnes Eng Co Monolithic detector construction of photodetectors
JPS5521470B1 (enExample) * 1971-03-10 1980-06-10
US3893150A (en) * 1971-04-22 1975-07-01 Philips Corp Semiconductor device having an electroluminescent diode
US3928091A (en) * 1971-09-27 1975-12-23 Hitachi Ltd Method for manufacturing a semiconductor device utilizing selective oxidation
FR2158128B1 (enExample) * 1971-11-04 1976-10-29 Comp Generale Electricite
JPS5641186B2 (enExample) * 1972-03-03 1981-09-26
US3952324A (en) * 1973-01-02 1976-04-20 Hughes Aircraft Company Solar panel mounted blocking diode
FR2228299B1 (enExample) * 1973-05-04 1977-09-02 Radiotechnique Compelec
US3893229A (en) * 1973-10-29 1975-07-08 Gen Electric Mounting for light-emitting diode pellet and method for the fabrication thereof
FR2253277B1 (enExample) * 1973-11-30 1977-08-12 Silec Semi Conducteurs
GB1503223A (en) * 1975-07-26 1978-03-08 Int Computers Ltd Formation of buried layers in a substrate
US4107721A (en) * 1977-01-26 1978-08-15 Bell Telephone Laboratories, Incorporated Phototransistor
US4157560A (en) * 1977-12-30 1979-06-05 International Business Machines Corporation Photo detector cell
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
CA1200622A (en) * 1981-12-04 1986-02-11 Western Electric Company, Incorporated Collector for radiation-generated current carriers in a semiconductor structure
JPS58138187A (ja) * 1982-02-12 1983-08-16 Toshiba Corp 固体イメ−ジセンサ
US4794443A (en) * 1984-05-28 1988-12-27 Canon Kabushiki Kaisha Semiconductor device and process for producing same
JPS62109376A (ja) * 1985-11-08 1987-05-20 Nissan Motor Co Ltd 受光用半導体装置
JP6021019B2 (ja) * 2011-06-09 2016-11-02 パナソニックＩｐマネジメント株式会社 光学素子とその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3380153A (en) * 1965-09-30 1968-04-30 Westinghouse Electric Corp Method of forming a semiconductor integrated circuit that includes a fast switching transistor

Also Published As

Publication number Publication date
DE1764565B2 (de) 1978-03-30
FR1602803A (enExample) 1971-02-01
AT284924B (de) 1970-10-12
DE1764565A1 (de) 1971-08-26
US3529217A (en) 1970-09-15
NL6709192A (enExample) 1969-01-03
JPS5110075B1 (enExample) 1976-04-01
BE717461A (enExample) 1969-01-02
SE352195B (enExample) 1972-12-18
CH492306A (de) 1970-06-15
GB1231493A (enExample) 1971-05-12

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee