CH492306A - Strahlungsempfindliches Halbleiterbauelement - Google Patents

Strahlungsempfindliches Halbleiterbauelement

Info

Publication number
CH492306A
CH492306A CH969568A CH969568A CH492306A CH 492306 A CH492306 A CH 492306A CH 969568 A CH969568 A CH 969568A CH 969568 A CH969568 A CH 969568A CH 492306 A CH492306 A CH 492306A
Authority
CH
Switzerland
Prior art keywords
radiation
semiconductor component
sensitive semiconductor
sensitive
component
Prior art date
Application number
CH969568A
Other languages
German (de)
English (en)
Inventor
Gerrit Van Santen Johannes
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH492306A publication Critical patent/CH492306A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
CH969568A 1967-07-01 1968-06-28 Strahlungsempfindliches Halbleiterbauelement CH492306A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6709192A NL6709192A (enExample) 1967-07-01 1967-07-01

Publications (1)

Publication Number Publication Date
CH492306A true CH492306A (de) 1970-06-15

Family

ID=19800600

Family Applications (1)

Application Number Title Priority Date Filing Date
CH969568A CH492306A (de) 1967-07-01 1968-06-28 Strahlungsempfindliches Halbleiterbauelement

Country Status (10)

Country Link
US (1) US3529217A (enExample)
JP (1) JPS5110075B1 (enExample)
AT (1) AT284924B (enExample)
BE (1) BE717461A (enExample)
CH (1) CH492306A (enExample)
DE (1) DE1764565C3 (enExample)
FR (1) FR1602803A (enExample)
GB (1) GB1231493A (enExample)
NL (1) NL6709192A (enExample)
SE (1) SE352195B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836998A (en) * 1969-01-16 1974-09-17 Signetics Corp High voltage bipolar semiconductor device and integrated circuit using the same and method
US3704375A (en) * 1970-05-05 1972-11-28 Barnes Eng Co Monolithic detector construction of photodetectors
JPS5521470B1 (enExample) * 1971-03-10 1980-06-10
US3893150A (en) * 1971-04-22 1975-07-01 Philips Corp Semiconductor device having an electroluminescent diode
US3928091A (en) * 1971-09-27 1975-12-23 Hitachi Ltd Method for manufacturing a semiconductor device utilizing selective oxidation
FR2158128B1 (enExample) * 1971-11-04 1976-10-29 Comp Generale Electricite
JPS5641186B2 (enExample) * 1972-03-03 1981-09-26
US3952324A (en) * 1973-01-02 1976-04-20 Hughes Aircraft Company Solar panel mounted blocking diode
FR2228299B1 (enExample) * 1973-05-04 1977-09-02 Radiotechnique Compelec
US3893229A (en) * 1973-10-29 1975-07-08 Gen Electric Mounting for light-emitting diode pellet and method for the fabrication thereof
FR2253277B1 (enExample) * 1973-11-30 1977-08-12 Silec Semi Conducteurs
GB1503223A (en) * 1975-07-26 1978-03-08 Int Computers Ltd Formation of buried layers in a substrate
US4107721A (en) * 1977-01-26 1978-08-15 Bell Telephone Laboratories, Incorporated Phototransistor
US4157560A (en) * 1977-12-30 1979-06-05 International Business Machines Corporation Photo detector cell
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
CA1200622A (en) * 1981-12-04 1986-02-11 Western Electric Company, Incorporated Collector for radiation-generated current carriers in a semiconductor structure
JPS58138187A (ja) * 1982-02-12 1983-08-16 Toshiba Corp 固体イメ−ジセンサ
US4794443A (en) * 1984-05-28 1988-12-27 Canon Kabushiki Kaisha Semiconductor device and process for producing same
JPS62109376A (ja) * 1985-11-08 1987-05-20 Nissan Motor Co Ltd 受光用半導体装置
JP6021019B2 (ja) * 2011-06-09 2016-11-02 パナソニックＩｐマネジメント株式会社 光学素子とその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3380153A (en) * 1965-09-30 1968-04-30 Westinghouse Electric Corp Method of forming a semiconductor integrated circuit that includes a fast switching transistor

Also Published As

Publication number Publication date
DE1764565C3 (de) 1978-12-07
DE1764565B2 (de) 1978-03-30
FR1602803A (enExample) 1971-02-01
AT284924B (de) 1970-10-12
DE1764565A1 (de) 1971-08-26
US3529217A (en) 1970-09-15
NL6709192A (enExample) 1969-01-03
JPS5110075B1 (enExample) 1976-04-01
BE717461A (enExample) 1969-01-02
SE352195B (enExample) 1972-12-18
GB1231493A (enExample) 1971-05-12

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Legal Events

Date Code Title Description
PL Patent ceased