FR2088357A1 - - Google Patents

Info

Publication number
FR2088357A1
FR2088357A1 FR7116232A FR7116232A FR2088357A1 FR 2088357 A1 FR2088357 A1 FR 2088357A1 FR 7116232 A FR7116232 A FR 7116232A FR 7116232 A FR7116232 A FR 7116232A FR 2088357 A1 FR2088357 A1 FR 2088357A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7116232A
Other languages
French (fr)
Other versions
FR2088357B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Barnes Engineering Co
Original Assignee
Barnes Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Barnes Engineering Co filed Critical Barnes Engineering Co
Publication of FR2088357A1 publication Critical patent/FR2088357A1/fr
Application granted granted Critical
Publication of FR2088357B1 publication Critical patent/FR2088357B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/337—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
FR7116232A 1970-05-05 1971-05-05 Expired FR2088357B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3466870A 1970-05-05 1970-05-05

Publications (2)

Publication Number Publication Date
FR2088357A1 true FR2088357A1 (enExample) 1972-01-07
FR2088357B1 FR2088357B1 (enExample) 1978-02-24

Family

ID=21877849

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7116232A Expired FR2088357B1 (enExample) 1970-05-05 1971-05-05

Country Status (9)

Country Link
US (1) US3704375A (enExample)
BE (1) BE766743A (enExample)
CA (1) CA961968A (enExample)
CH (1) CH524896A (enExample)
DE (1) DE2122065A1 (enExample)
FR (1) FR2088357B1 (enExample)
GB (1) GB1315300A (enExample)
NL (1) NL7103056A (enExample)
SE (1) SE348886B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0108480A3 (en) * 1982-11-01 1986-07-16 Kabushiki Kaisha Toshiba Photoelectric conversion element

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5349981A (en) * 1976-10-18 1978-05-06 Nippon Telegr & Teleph Corp <Ntt> Photoelectric conversion element
DE19607047C2 (de) * 1996-02-24 1999-03-25 Gen Semiconductor Ireland Macr Verfahren zum Herstellen von Halbleiterelementen mit aktiven Strukturen
DE102004001556A1 (de) * 2004-01-10 2005-08-04 Robert Bosch Gmbh Nachtsichtsystem für Kraftfahrzeuge mit partiellem optischem Filter
DE102004013850B4 (de) * 2004-03-20 2006-12-21 Robert Bosch Gmbh Filterchip mit integrierter Blende

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3344278A (en) * 1963-06-14 1967-09-26 Int Rectifier Corp Data readout system utilizing light sensitive junction switch members
US3366789A (en) * 1964-02-12 1968-01-30 American Cyanamid Co Calibration of ultraviolet radiation sources
GB1084705A (en) * 1965-08-27 1967-09-27 Standard Telephones Cables Ltd Semiconductor planar optical mixer systems
US3478214A (en) * 1966-02-16 1969-11-11 North American Rockwell Photodetector responsive to light intensity in different spectral bands
US3435232A (en) * 1966-03-03 1969-03-25 Hewlett Packard Co Beam position detector
US3488636A (en) * 1966-08-22 1970-01-06 Fairchild Camera Instr Co Optically programmable read only memory
US3539883A (en) * 1967-03-15 1970-11-10 Ion Physics Corp Antireflection coatings for semiconductor devices
NL6709192A (enExample) * 1967-07-01 1969-01-03
US3483096A (en) * 1968-04-25 1969-12-09 Avco Corp Process for making an indium antimonide infrared detector contact

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0108480A3 (en) * 1982-11-01 1986-07-16 Kabushiki Kaisha Toshiba Photoelectric conversion element
US4672221A (en) * 1982-11-01 1987-06-09 Tokyo Shibaura Denki Kabushiki Kaisha Photoelectric conversion element with light shielding conductive layer

Also Published As

Publication number Publication date
GB1315300A (en) 1973-05-02
CA961968A (en) 1975-01-28
FR2088357B1 (enExample) 1978-02-24
NL7103056A (enExample) 1971-11-09
US3704375A (en) 1972-11-28
BE766743A (fr) 1971-11-05
CH524896A (de) 1972-06-30
SE348886B (enExample) 1972-09-11
DE2122065A1 (de) 1971-11-18

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Legal Events

Date Code Title Description
ST Notification of lapse