GB1315300A - Monolithic detector construction of photodetectors - Google Patents

Monolithic detector construction of photodetectors

Info

Publication number
GB1315300A
GB1315300A GB2619871*A GB2619871A GB1315300A GB 1315300 A GB1315300 A GB 1315300A GB 2619871 A GB2619871 A GB 2619871A GB 1315300 A GB1315300 A GB 1315300A
Authority
GB
United Kingdom
Prior art keywords
mesa
passivation
lies
junction
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2619871*A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Barnes Engineering Co
Original Assignee
Barnes Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Barnes Engineering Co filed Critical Barnes Engineering Co
Priority to US00294560A priority Critical patent/US3798483A/en
Publication of GB1315300A publication Critical patent/GB1315300A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/337—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Light Receiving Elements (AREA)
GB2619871*A 1970-05-05 1970-05-30 Monolithic detector construction of photodetectors Expired GB1315300A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US00294560A US3798483A (en) 1970-05-20 1972-10-03 Gaseous discharge display device with a layer of electrically resistant material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3466870A 1970-05-05 1970-05-05

Publications (1)

Publication Number Publication Date
GB1315300A true GB1315300A (en) 1973-05-02

Family

ID=21877849

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2619871*A Expired GB1315300A (en) 1970-05-05 1970-05-30 Monolithic detector construction of photodetectors

Country Status (9)

Country Link
US (1) US3704375A (enExample)
BE (1) BE766743A (enExample)
CA (1) CA961968A (enExample)
CH (1) CH524896A (enExample)
DE (1) DE2122065A1 (enExample)
FR (1) FR2088357B1 (enExample)
GB (1) GB1315300A (enExample)
NL (1) NL7103056A (enExample)
SE (1) SE348886B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5349981A (en) * 1976-10-18 1978-05-06 Nippon Telegr & Teleph Corp <Ntt> Photoelectric conversion element
JPS5980964A (ja) * 1982-11-01 1984-05-10 Toshiba Corp 光電変換素子
DE19607047C2 (de) * 1996-02-24 1999-03-25 Gen Semiconductor Ireland Macr Verfahren zum Herstellen von Halbleiterelementen mit aktiven Strukturen
DE102004001556A1 (de) * 2004-01-10 2005-08-04 Robert Bosch Gmbh Nachtsichtsystem für Kraftfahrzeuge mit partiellem optischem Filter
DE102004013850B4 (de) * 2004-03-20 2006-12-21 Robert Bosch Gmbh Filterchip mit integrierter Blende

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3344278A (en) * 1963-06-14 1967-09-26 Int Rectifier Corp Data readout system utilizing light sensitive junction switch members
US3366789A (en) * 1964-02-12 1968-01-30 American Cyanamid Co Calibration of ultraviolet radiation sources
GB1084705A (en) * 1965-08-27 1967-09-27 Standard Telephones Cables Ltd Semiconductor planar optical mixer systems
US3478214A (en) * 1966-02-16 1969-11-11 North American Rockwell Photodetector responsive to light intensity in different spectral bands
US3435232A (en) * 1966-03-03 1969-03-25 Hewlett Packard Co Beam position detector
US3488636A (en) * 1966-08-22 1970-01-06 Fairchild Camera Instr Co Optically programmable read only memory
US3539883A (en) * 1967-03-15 1970-11-10 Ion Physics Corp Antireflection coatings for semiconductor devices
NL6709192A (enExample) * 1967-07-01 1969-01-03
US3483096A (en) * 1968-04-25 1969-12-09 Avco Corp Process for making an indium antimonide infrared detector contact

Also Published As

Publication number Publication date
FR2088357A1 (enExample) 1972-01-07
CA961968A (en) 1975-01-28
FR2088357B1 (enExample) 1978-02-24
NL7103056A (enExample) 1971-11-09
US3704375A (en) 1972-11-28
BE766743A (fr) 1971-11-05
CH524896A (de) 1972-06-30
SE348886B (enExample) 1972-09-11
DE2122065A1 (de) 1971-11-18

Similar Documents

Publication Publication Date Title
US4549195A (en) Heterojunction semiconductor device
GB954478A (en) Semiconductor capacitor devices
GB1315300A (en) Monolithic detector construction of photodetectors
GB1193532A (en) Improved Electrical Contact for Semiconductor Devices.
GB1421853A (en) Hgte-cdte photovoltaic detectors
GB1178199A (en) Semiconductor Radiation Detection Apparatus
JPS561318A (en) Photoelectric conversion device
US5517029A (en) Dual-band IR scanning focal plane assembly having two monolithically integrated linear detector arrays for simultaneous image readout
GB1152156A (en) Semiconductor Devices
GB1228819A (enExample)
JPS5792877A (en) Photo-receiving semiconductor
JPS5724578A (en) Infrared ray detecting element
GB1233139A (enExample)
CN116230789A (zh) 一种用于线列铟镓砷探测器的盲元抑制结构及实现方法
GB1412879A (en) Shcottky barrier semiconductor device
JPS62104163A (ja) 光電変換装置
JPS5687380A (en) Semiconductor device for detection of radiant light
RU115122U1 (ru) Матричный приемник излучения
GB1441261A (en) Semiconductor avalanche photodiodes
GB1309123A (en) Solid state light sensitive storage device
US3445660A (en) Method for detection of ultraviolet radiation
JPS55134970A (en) Photofiring thyristor
JPS6222405B2 (enExample)
URE Solid state optical detector(Development and fabrication of photometers for demodulating two laser beams to produce difference frequencies up to eleven GHz)[Quarterly Report, 1 Jan.- 31 Aug. 1971]
JPS57153477A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee