DE2111098A1 - Transistor-Konstruktion - Google Patents

Transistor-Konstruktion

Info

Publication number
DE2111098A1
DE2111098A1 DE19712111098 DE2111098A DE2111098A1 DE 2111098 A1 DE2111098 A1 DE 2111098A1 DE 19712111098 DE19712111098 DE 19712111098 DE 2111098 A DE2111098 A DE 2111098A DE 2111098 A1 DE2111098 A1 DE 2111098A1
Authority
DE
Germany
Prior art keywords
housing
semiconductor element
metal layer
passage
attached
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712111098
Other languages
German (de)
English (en)
Inventor
Carley Donald Raymond
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2111098A1 publication Critical patent/DE2111098A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Bipolar Transistors (AREA)
  • Microwave Amplifiers (AREA)
DE19712111098 1970-06-11 1971-03-09 Transistor-Konstruktion Pending DE2111098A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4543470A 1970-06-11 1970-06-11

Publications (1)

Publication Number Publication Date
DE2111098A1 true DE2111098A1 (de) 1971-12-16

Family

ID=21937850

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712111098 Pending DE2111098A1 (de) 1970-06-11 1971-03-09 Transistor-Konstruktion

Country Status (10)

Country Link
US (1) US3611059A (https=)
JP (1) JPS5135109B1 (https=)
BE (1) BE763416A (https=)
CA (1) CA920718A (https=)
DE (1) DE2111098A1 (https=)
FR (1) FR2094178B1 (https=)
GB (1) GB1302827A (https=)
MY (1) MY7400059A (https=)
NL (1) NL7101751A (https=)
SE (1) SE377631B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3119239A1 (de) * 1980-05-15 1982-06-16 CTS Corp., 46514 Elkhart, Ind. Verfahren zur herstellung eines mehrschicht-halbleiterplaettchen-traegers sowie nach diesem verfahren hergestelltes mehrschicht-keramikgehaeuse

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767979A (en) * 1971-03-05 1973-10-23 Communications Transistor Corp Microwave hermetic transistor package
US3728589A (en) * 1971-04-16 1973-04-17 Rca Corp Semiconductor assembly
US3828228A (en) * 1973-03-05 1974-08-06 Hewlett Packard Co Microwave transistor package
JPS5834755Y2 (ja) * 1978-09-18 1983-08-04 富士通株式会社 半導体装置
US4259684A (en) * 1978-10-13 1981-03-31 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Packages for microwave integrated circuits
US4276558A (en) * 1979-06-15 1981-06-30 Ford Aerospace & Communications Corp. Hermetically sealed active microwave integrated circuit
US4538170A (en) * 1983-01-03 1985-08-27 General Electric Company Power chip package
US6818477B2 (en) * 2001-11-26 2004-11-16 Powerwave Technologies, Inc. Method of mounting a component in an edge-plated hole formed in a printed circuit board
CN111554463B (zh) * 2020-05-11 2021-09-24 电子科技大学 一种宽频低涡流损耗的人工导体

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2791731A (en) * 1957-05-07 Metal rectifier assemblies
NL179929C (https=) * 1952-11-03 1900-01-01 Du Pont
US2984890A (en) * 1956-12-24 1961-05-23 Gahagan Inc Crystal diode rectifier and method of making same
NL234330A (https=) * 1957-12-18
US2987658A (en) * 1958-01-10 1961-06-06 Philco Corp Improved semiconductor diode
US3266137A (en) * 1962-06-07 1966-08-16 Hughes Aircraft Co Metal ball connection to crystals
JPS5115155B2 (https=) * 1972-06-08 1976-05-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3119239A1 (de) * 1980-05-15 1982-06-16 CTS Corp., 46514 Elkhart, Ind. Verfahren zur herstellung eines mehrschicht-halbleiterplaettchen-traegers sowie nach diesem verfahren hergestelltes mehrschicht-keramikgehaeuse

Also Published As

Publication number Publication date
SE377631B (https=) 1975-07-14
NL7101751A (https=) 1971-12-14
FR2094178A1 (https=) 1972-02-04
FR2094178B1 (https=) 1977-01-28
GB1302827A (https=) 1973-01-10
US3611059A (en) 1971-10-05
CA920718A (en) 1973-02-06
BE763416A (fr) 1971-07-16
MY7400059A (en) 1974-12-31
JPS5135109B1 (https=) 1976-09-30

Similar Documents

Publication Publication Date Title
DE102009032973B4 (de) Leistungshalbleitervorrichtung
DE10310809B4 (de) Leistungshalbleitereinrichtung
DE10100620B4 (de) Leistungsmodul
DE2352357A1 (de) Halbleitergehaeuse
DE112018002137B4 (de) Halbleiterbauteil
DE1539863C3 (de) Hochfrequenz-Hochleistungstransistor
DE19920381A1 (de) Gehäuse und Leitungsrahmen für ein Halbleiterbauelement hoher Stromleitfähigkeit, mit großflächigen Verbindungsanschlüssen und veränderter Form
DE1815989A1 (de) Halbleiter-Anordnung
DE112019001086T5 (de) Halbleitervorrichtung
DE212018000078U1 (de) Halbleiterbauelement
DE112019005278T5 (de) Halbleiterbauteil
DE10122931A1 (de) Halbleitermodul
DE102014107088A1 (de) Halbleiterpackage mit kleiner grundfläche
DE102018220949B4 (de) Halbleitervorrichtung
DE102020204406B4 (de) Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
DE2111098A1 (de) Transistor-Konstruktion
DE2300116A1 (de) Hochfrequenz-feldeffekttransistor mit isolierter gate-elektrode fuer breitbandbetrieb
DE102020123717B4 (de) Halbleitervorrichtung
DE3034902A1 (de) Impulsunterdruecker
DE3406420A1 (de) Halbleiter-leistungsvorrichtung mit mehreren parallel geschalteten, gleichen elementen
DE112022003555T5 (de) Halbleiterbauteil
DE102016223651A1 (de) Halbleitermodul und halbleitervorrichtung
DE3688205T2 (de) Packungsstruktur fuer einen halbleiterchip.
DE102019121229A1 (de) Elektronische Vorrichtungen mit elektrisch isolierten Lastelektroden
DE102022113481A1 (de) Halbleitervorrichtung

Legal Events

Date Code Title Description
OHN Withdrawal