DE2109874B2 - Halbleiterbauelement mit einem monokristallinen siliziumkoerper und verfahren zum herstellen - Google Patents

Halbleiterbauelement mit einem monokristallinen siliziumkoerper und verfahren zum herstellen

Info

Publication number
DE2109874B2
DE2109874B2 DE19712109874 DE2109874A DE2109874B2 DE 2109874 B2 DE2109874 B2 DE 2109874B2 DE 19712109874 DE19712109874 DE 19712109874 DE 2109874 A DE2109874 A DE 2109874A DE 2109874 B2 DE2109874 B2 DE 2109874B2
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor component
silicon body
monocristalline silicon
monocristalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19712109874
Other languages
English (en)
Other versions
DE2109874A1 (de
DE2109874C3 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1708470A external-priority patent/JPS50182B1/ja
Application filed filed Critical
Publication of DE2109874A1 publication Critical patent/DE2109874A1/de
Publication of DE2109874B2 publication Critical patent/DE2109874B2/de
Application granted granted Critical
Publication of DE2109874C3 publication Critical patent/DE2109874C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
  • Powder Metallurgy (AREA)
  • Formation Of Insulating Films (AREA)
DE2109874A 1970-03-02 1971-03-02 Halbleiterbauelement mit einem monokristallinen Siliziumkörper und Verfahren zum Herstellen Expired DE2109874C3 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP1708470A JPS50182B1 (de) 1970-03-02 1970-03-02
US00120289A US3821783A (en) 1970-03-02 1971-03-02 Semiconductor device with a silicon monocrystalline body having a specific crystal plane
US00402306A US3850702A (en) 1970-03-02 1973-10-01 Method of making superalloy bodies
US473407A US3920489A (en) 1970-03-02 1974-05-28 Method of making superalloy bodies
US483837A US3920492A (en) 1970-03-02 1974-06-27 Process for manufacturing a semiconductor device with a silicon monocrystalline body having a specific crystal plane

Publications (3)

Publication Number Publication Date
DE2109874A1 DE2109874A1 (de) 1971-09-16
DE2109874B2 true DE2109874B2 (de) 1976-12-30
DE2109874C3 DE2109874C3 (de) 1984-10-18

Family

ID=27519889

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2109874A Expired DE2109874C3 (de) 1970-03-02 1971-03-02 Halbleiterbauelement mit einem monokristallinen Siliziumkörper und Verfahren zum Herstellen

Country Status (5)

Country Link
US (4) US3821783A (de)
DE (1) DE2109874C3 (de)
FR (1) FR2084089A5 (de)
GB (1) GB1318832A (de)
NL (1) NL171309C (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
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NL7306948A (de) * 1973-05-18 1974-11-20
US3975219A (en) * 1975-09-02 1976-08-17 United Technologies Corporation Thermomechanical treatment for nickel base superalloys
US4050964A (en) * 1975-12-01 1977-09-27 Bell Telephone Laboratories, Incorporated Growing smooth epitaxial layers on misoriented substrates
US4081295A (en) * 1977-06-02 1978-03-28 United Technologies Corporation Fabricating process for high strength, low ductility nickel base alloys
US4144100A (en) * 1977-12-02 1979-03-13 General Motors Corporation Method of low dose phoshorus implantation for oxide passivated diodes in <10> P-type silicon
JPS5694732A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Semiconductor substrate
US4916505A (en) * 1981-02-03 1990-04-10 Research Corporation Of The University Of Hawaii Composite unipolar-bipolar semiconductor devices
US4518442A (en) * 1981-11-27 1985-05-21 United Technologies Corporation Method of producing columnar crystal superalloy material with controlled orientation and product
US4402767A (en) * 1982-12-27 1983-09-06 Owens-Corning Fiberglas Corporation Fabrication of alloys
JPS60253269A (ja) * 1984-05-29 1985-12-13 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
JPS60253268A (ja) * 1984-05-29 1985-12-13 Meidensha Electric Mfg Co Ltd 半導体装置
JP2597976B2 (ja) * 1985-03-27 1997-04-09 株式会社東芝 半導体装置及びその製造方法
US4707216A (en) * 1986-01-24 1987-11-17 University Of Illinois Semiconductor deposition method and device
US4872046A (en) * 1986-01-24 1989-10-03 University Of Illinois Heterojunction semiconductor device with <001> tilt
EP0260465B1 (de) * 1986-09-08 1992-01-02 BBC Brown Boveri AG Oxyddispersionsgehärtete Superlegierung mit verbesserter Korrosionsbeständigkeit auf der Basis von Nickel
US4865659A (en) * 1986-11-27 1989-09-12 Sharp Kabushiki Kaisha Heteroepitaxial growth of SiC on Si
US5279701A (en) * 1988-05-11 1994-01-18 Sharp Kabushiki Kaisha Method for the growth of silicon carbide single crystals
US5009704A (en) * 1989-06-28 1991-04-23 Allied-Signal Inc. Processing nickel-base superalloy powders for improved thermomechanical working
US5230768A (en) * 1990-03-26 1993-07-27 Sharp Kabushiki Kaisha Method for the production of SiC single crystals by using a specific substrate crystal orientation
US5393483A (en) * 1990-04-02 1995-02-28 General Electric Company High-temperature fatigue-resistant nickel based superalloy and thermomechanical process
JP2570502B2 (ja) * 1991-01-08 1997-01-08 三菱電機株式会社 半導体装置及びその製造方法
JP2750331B2 (ja) * 1992-04-23 1998-05-13 株式会社ジャパンエナジー エピタキシャル成長用基板およびエピタキシャル成長方法
WO1994016459A1 (en) * 1993-01-13 1994-07-21 Sumitomo Chemical Company, Limited Semiconductor expitaxial substrate
US5877516A (en) * 1998-03-20 1999-03-02 The United States Of America As Represented By The Secretary Of The Army Bonding of silicon carbide directly to a semiconductor substrate by using silicon to silicon bonding
JP3690563B2 (ja) * 1998-04-28 2005-08-31 富士通株式会社 シリコン基板の評価方法及び半導体装置の製造方法
JP2002134374A (ja) * 2000-10-25 2002-05-10 Mitsubishi Electric Corp 半導体ウェハ、その製造方法およびその製造装置
US20020117718A1 (en) * 2001-02-28 2002-08-29 Apostolos Voutsas Method of forming predominantly <100> polycrystalline silicon thin film transistors
CN100403543C (zh) * 2001-12-04 2008-07-16 信越半导体株式会社 贴合晶片及贴合晶片的制造方法
JP2004119943A (ja) * 2002-09-30 2004-04-15 Renesas Technology Corp 半導体ウェハおよびその製造方法
US8220697B2 (en) * 2005-01-18 2012-07-17 Siemens Energy, Inc. Weldability of alloys with directionally-solidified grain structure
JP4797514B2 (ja) * 2005-08-26 2011-10-19 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
KR100868758B1 (ko) * 2007-01-15 2008-11-13 삼성전기주식회사 압저항 센서를 구비한 회전형 ｍｅｍｓ 디바이스
EP2831302A1 (de) * 2012-03-27 2015-02-04 ALSTOM Technology Ltd Verfahren zur herstellung von komponenten aus einzelkristall (sx)- oder direktional gehärteten (ds)-superlegierungen auf nickelbasis

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FR1270844A (fr) * 1959-09-18 1961-09-01 Philips Nv Procédé pour la fabrication de cristaux en forme de tiges en matière semiconductrice
NL104644C (de) * 1959-09-18
NL277330A (de) * 1961-04-22
DE1264419B (de) * 1961-10-27 1968-03-28 Siemens Ag Verfahren zum Abscheiden einer einkristallinen Silicium-Schicht aus der Gasphase aufeinem Silicium-Einkristall
NL284785A (de) * 1961-10-27
US3346427A (en) * 1964-11-10 1967-10-10 Du Pont Dispersion hardened metal sheet and process
GB1100124A (en) * 1964-02-13 1968-01-24 Hitachi Ltd Semiconductor devices and methods for producing the same
FR1424690A (fr) * 1964-02-13 1966-01-14 Hitachi Ltd Dispositifs semi-conducteurs et leur procédé de fabrication
US3366515A (en) * 1965-03-19 1968-01-30 Sherritt Gordon Mines Ltd Working cycle for dispersion strengthened materials
US3480491A (en) * 1965-11-17 1969-11-25 Ibm Vapor polishing technique
US3476592A (en) * 1966-01-14 1969-11-04 Ibm Method for producing improved epitaxial films
US3556875A (en) * 1967-01-03 1971-01-19 Philco Ford Corp Process for epitaxially growing gallium arsenide on germanium
FR1574577A (de) * 1967-08-03 1969-07-11
US3612960A (en) * 1968-10-15 1971-10-12 Tokyo Shibaura Electric Co Semiconductor device
US3603848A (en) * 1969-02-27 1971-09-07 Tokyo Shibaura Electric Co Complementary field-effect-type semiconductor device
US3671223A (en) * 1969-12-10 1972-06-20 United Aircraft Corp Anisotropic polyphase structure of multivariant eutectic composition
US3639179A (en) * 1970-02-02 1972-02-01 Federal Mogul Corp Method of making large grain-sized superalloys
US3749612A (en) * 1971-04-06 1973-07-31 Int Nickel Co Hot working of dispersion-strengthened heat resistant alloys and the product thereof
BE794801A (fr) * 1972-01-31 1973-07-31 Int Nickel Ltd Procede de recuit en zones d'alliages
US3783032A (en) * 1972-07-31 1974-01-01 Gen Electric Method for producing directionally solidified nickel base alloy

Also Published As

Publication number Publication date
DE2109874A1 (de) 1971-09-16
US3920489A (en) 1975-11-18
NL171309B (nl) 1982-10-01
GB1318832A (en) 1973-05-31
NL7102685A (de) 1971-09-06
DE2109874C3 (de) 1984-10-18
NL171309C (nl) 1983-03-01
FR2084089A5 (de) 1971-12-17
US3920492A (en) 1975-11-18
US3821783A (en) 1974-06-28
US3850702A (en) 1974-11-26

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Legal Events

Date Code Title Description
8228 New agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING., PAT.-ANW., 8000 MUENCHEN

8281 Inventor (new situation)

Free format text: SUGITA, YOSHIMITSU, KOKUBUNJI, TOKIO/TOKYO, JP KATO, TERUO SUGAWARA, KATSURO, KODAIRA, TOKIO/TOKYO,JP TAMURA, MASAO, TOKOROZAWA, TOKIO/TOKYO, JP

C3 Grant after two publication steps (3rd publication)