DE2102592A1 - Verfahren und Vorrichtung zum Erzeu gen von parallelen Mikroionenstrahlen - Google Patents
Verfahren und Vorrichtung zum Erzeu gen von parallelen MikroionenstrahlenInfo
- Publication number
- DE2102592A1 DE2102592A1 DE19712102592 DE2102592A DE2102592A1 DE 2102592 A1 DE2102592 A1 DE 2102592A1 DE 19712102592 DE19712102592 DE 19712102592 DE 2102592 A DE2102592 A DE 2102592A DE 2102592 A1 DE2102592 A1 DE 2102592A1
- Authority
- DE
- Germany
- Prior art keywords
- ions
- ion
- sample
- ion beam
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 27
- 150000002500 ions Chemical class 0.000 claims description 79
- 238000010884 ion-beam technique Methods 0.000 claims description 52
- 238000005470 impregnation Methods 0.000 claims description 20
- 238000005372 isotope separation Methods 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000001133 acceleration Effects 0.000 claims 3
- 206010035148 Plague Diseases 0.000 claims 1
- 241000607479 Yersinia pestis Species 0.000 claims 1
- 239000002019 doping agent Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7001863A FR2080511A1 (enrdf_load_stackoverflow) | 1970-01-20 | 1970-01-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2102592A1 true DE2102592A1 (de) | 1971-07-29 |
Family
ID=9049291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712102592 Pending DE2102592A1 (de) | 1970-01-20 | 1971-01-20 | Verfahren und Vorrichtung zum Erzeu gen von parallelen Mikroionenstrahlen |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE2102592A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2080511A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1321172A (enrdf_load_stackoverflow) |
| NL (1) | NL7100749A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3138744A1 (de) * | 1981-09-29 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von halbleitervorrichtungen |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3845312A (en) * | 1972-07-13 | 1974-10-29 | Texas Instruments Inc | Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density |
| CA1100237A (en) * | 1977-03-23 | 1981-04-28 | Roger F.W. Pease | Multiple electron beam exposure system |
-
1970
- 1970-01-20 FR FR7001863A patent/FR2080511A1/fr not_active Withdrawn
-
1971
- 1971-01-19 GB GB251971A patent/GB1321172A/en not_active Expired
- 1971-01-20 DE DE19712102592 patent/DE2102592A1/de active Pending
- 1971-01-20 NL NL7100749A patent/NL7100749A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3138744A1 (de) * | 1981-09-29 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von halbleitervorrichtungen |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1321172A (en) | 1973-06-20 |
| FR2080511A1 (enrdf_load_stackoverflow) | 1971-11-19 |
| NL7100749A (enrdf_load_stackoverflow) | 1971-07-22 |
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