GB1321172A - Method and device for obtaining parallel and focused ionic microbeams and application of said method to the collective formation of electric circuits by ion implantation - Google Patents
Method and device for obtaining parallel and focused ionic microbeams and application of said method to the collective formation of electric circuits by ion implantationInfo
- Publication number
- GB1321172A GB1321172A GB251971A GB251971A GB1321172A GB 1321172 A GB1321172 A GB 1321172A GB 251971 A GB251971 A GB 251971A GB 251971 A GB251971 A GB 251971A GB 1321172 A GB1321172 A GB 1321172A
- Authority
- GB
- United Kingdom
- Prior art keywords
- microbeams
- focused
- stage
- ion implantation
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Abstract
1321172 Mass separators; ion implantation into semi-conductors COMMISSARIAT A L'ENERGIE ATOMIQUE 19 Jan 1971 [20 Jan 1970] 2519/71 Headings H1D and H1K A method of obtaining identical parallel focused beams of monoenergetic ion beams of a single isotope suitable for simulataneous production of identical circuits by ion implantation comprises three stages 1, 6 and 11: a beam of monoenergetic ions of a single isotope leave stage 1; the input beam to stage 6 is transformed to a broad cross-section parallel beam which is then split into parallel focused microbeams which leave stage 6; the microbeams are focused on to the sample 13, e.g. a semiconductor material which is provided in stage 11. The beam 3 from an ion source, e.g. of the duoplasmatron type is focused by a system 4 of quadruple lenses producing a convergent beam of about 30 KeV. which passes through a double-focusing electro-magnet isotope separator 5. A system 8 of quadruple lenses produces a broad parallel beam which passes through tube 9 comprising coaxial frustoconical rings and producing a substantially uniform electric field which is adjustable so as to vary the depth of ionic penetration in sample 13. The device 10 comprises a system of quadruple microlenses having filiform electrodes and producing microbeams focused on the sample 13 which is displaceable relative to the beams preferably by a computer control 14. The ion dopants may be Li, B, Al, P, Ga, As, Cu, Zn, In and Au and the microbeams have a diameter of 1 micron and an energy between about 10 KeV and 180 KeV.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7001863A FR2080511A1 (en) | 1970-01-20 | 1970-01-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1321172A true GB1321172A (en) | 1973-06-20 |
Family
ID=9049291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB251971A Expired GB1321172A (en) | 1970-01-20 | 1971-01-19 | Method and device for obtaining parallel and focused ionic microbeams and application of said method to the collective formation of electric circuits by ion implantation |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE2102592A1 (en) |
FR (1) | FR2080511A1 (en) |
GB (1) | GB1321172A (en) |
NL (1) | NL7100749A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3845312A (en) * | 1972-07-13 | 1974-10-29 | Texas Instruments Inc | Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density |
CA1100237A (en) * | 1977-03-23 | 1981-04-28 | Roger F.W. Pease | Multiple electron beam exposure system |
DE3138744A1 (en) * | 1981-09-29 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Method of producing semiconductor devices |
-
1970
- 1970-01-20 FR FR7001863A patent/FR2080511A1/fr not_active Withdrawn
-
1971
- 1971-01-19 GB GB251971A patent/GB1321172A/en not_active Expired
- 1971-01-20 NL NL7100749A patent/NL7100749A/xx unknown
- 1971-01-20 DE DE19712102592 patent/DE2102592A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2080511A1 (en) | 1971-11-19 |
DE2102592A1 (en) | 1971-07-29 |
NL7100749A (en) | 1971-07-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |