DE2102582C3 - Verfahren zur Herstellung von Filmen aus Einkristallverbindungen von Aluminiumnitrid oder Galliumnitrid - Google Patents

Verfahren zur Herstellung von Filmen aus Einkristallverbindungen von Aluminiumnitrid oder Galliumnitrid

Info

Publication number
DE2102582C3
DE2102582C3 DE2102582A DE2102582A DE2102582C3 DE 2102582 C3 DE2102582 C3 DE 2102582C3 DE 2102582 A DE2102582 A DE 2102582A DE 2102582 A DE2102582 A DE 2102582A DE 2102582 C3 DE2102582 C3 DE 2102582C3
Authority
DE
Germany
Prior art keywords
nitride
single crystal
films
substrate
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2102582A
Other languages
German (de)
English (en)
Other versions
DE2102582B2 (de
DE2102582A1 (de
Inventor
Harold Murray Anaheim Calif. Manasevit (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
North American Rockwell Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North American Rockwell Corp filed Critical North American Rockwell Corp
Publication of DE2102582A1 publication Critical patent/DE2102582A1/de
Publication of DE2102582B2 publication Critical patent/DE2102582B2/de
Application granted granted Critical
Publication of DE2102582C3 publication Critical patent/DE2102582C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • H10W74/43—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
DE2102582A 1970-06-22 1971-01-20 Verfahren zur Herstellung von Filmen aus Einkristallverbindungen von Aluminiumnitrid oder Galliumnitrid Expired DE2102582C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US048558A US3922475A (en) 1970-06-22 1970-06-22 Process for producing nitride films

Publications (3)

Publication Number Publication Date
DE2102582A1 DE2102582A1 (de) 1971-12-23
DE2102582B2 DE2102582B2 (de) 1974-11-28
DE2102582C3 true DE2102582C3 (de) 1975-07-17

Family

ID=21955234

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2102582A Expired DE2102582C3 (de) 1970-06-22 1971-01-20 Verfahren zur Herstellung von Filmen aus Einkristallverbindungen von Aluminiumnitrid oder Galliumnitrid

Country Status (9)

Country Link
US (1) US3922475A (enExample)
JP (1) JPS5236117B1 (enExample)
AU (1) AU2341470A (enExample)
CA (1) CA942637A (enExample)
DE (1) DE2102582C3 (enExample)
FR (1) FR2096394B1 (enExample)
GB (1) GB1346323A (enExample)
NL (1) NL7100856A (enExample)
SE (1) SE378191B (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5532021B2 (enExample) * 1974-10-26 1980-08-22
CA1071068A (en) * 1975-03-19 1980-02-05 Guy-Michel Jacob Method of manufacturing single crystals by growth from the vapour phase
US4090851A (en) * 1976-10-15 1978-05-23 Rca Corporation Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets
FR2403646A1 (fr) * 1977-09-16 1979-04-13 Anvar Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
US4152182A (en) * 1978-05-15 1979-05-01 International Business Machines Corporation Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide
US4172754A (en) * 1978-07-17 1979-10-30 National Research Development Corporation Synthesis of aluminum nitride
DE3379059D1 (en) * 1982-10-19 1989-03-02 Secr Defence Brit Organometallic chemical vapour deposition of films
JPH06105779B2 (ja) * 1983-02-28 1994-12-21 双葉電子工業株式会社 半導体装置及びその製造方法
US4688935A (en) * 1983-06-24 1987-08-25 Morton Thiokol, Inc. Plasma spectroscopic analysis of organometallic compounds
EP0153737B1 (en) * 1984-02-27 1993-07-28 Kabushiki Kaisha Toshiba Circuit substrate having high thermal conductivity
US4671845A (en) * 1985-03-22 1987-06-09 The United States Of America As Represented By The Secretary Of The Navy Method for producing high quality germanium-germanium nitride interfaces for germanium semiconductors and device produced thereby
JPS62119196A (ja) * 1985-11-18 1987-05-30 Univ Nagoya 化合物半導体の成長方法
EP0259164B1 (en) * 1986-09-04 1992-05-20 E.I. Du Pont De Nemours And Company A melt-formable organoaluminum polymer
US5061663A (en) * 1986-09-04 1991-10-29 E. I. Du Pont De Nemours And Company AlN and AlN-containing composites
US5041512A (en) * 1986-09-04 1991-08-20 E. I. Du Pont De Nemours And Company Melt-formable organoaluminum polymer
US5164263A (en) * 1986-09-04 1992-11-17 E. I. Du Pont De Nemours & Co. Aluminum nitride flakes and spheres
US4844989A (en) * 1987-03-19 1989-07-04 The University Of Chicago (Arch Development Corp.) Superconducting structure with layers of niobium nitride and aluminum nitride
US4832986A (en) * 1987-07-06 1989-05-23 Regents Of The University Of Minnesota Process for metal nitride deposition
US4865830A (en) * 1988-01-27 1989-09-12 E. I. Du Pont De Nemours And Company Gas phase preparation of aluminum nitride
JPH02217473A (ja) * 1988-02-29 1990-08-30 Natl Res Dev Corp 窒化アルミニウムフィルムの形成方法
JPH069257B2 (ja) * 1989-03-30 1994-02-02 名古屋大学長 窒化ガリウム系化合物半導体発光素子の作製方法
ATE83134T1 (de) * 1989-05-23 1992-12-15 Bock & Schupp Schmuckstueck.
US4985742A (en) * 1989-07-07 1991-01-15 University Of Colorado Foundation, Inc. High temperature semiconductor devices having at least one gallium nitride layer
US5508239A (en) * 1990-09-07 1996-04-16 E. I. Du Pont De Nemours And Company High strength aluminum nitride fibers and composites and processes for the preparation thereof
US5334277A (en) * 1990-10-25 1994-08-02 Nichia Kagaky Kogyo K.K. Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same
US5433169A (en) * 1990-10-25 1995-07-18 Nichia Chemical Industries, Ltd. Method of depositing a gallium nitride-based III-V group compound semiconductor crystal layer
JPH088217B2 (ja) * 1991-01-31 1996-01-29 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
EP0730044B1 (en) * 1995-03-01 2001-06-20 Sumitomo Electric Industries, Limited Boron-aluminum nitride coating and method of producing same
US7682709B1 (en) * 1995-10-30 2010-03-23 North Carolina State University Germanium doped n-type aluminum nitride epitaxial layers
US5763905A (en) * 1996-07-09 1998-06-09 Abb Research Ltd. Semiconductor device having a passivation layer
JP4318768B2 (ja) * 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100388011B1 (ko) * 2000-01-17 2003-06-18 삼성전기주식회사 ＧａＮ박막 ＳＡＷ필터 및 이를 제조하는 방법
US6781159B2 (en) * 2001-12-03 2004-08-24 Xerox Corporation Field emission display device
US6579735B1 (en) * 2001-12-03 2003-06-17 Xerox Corporation Method for fabricating GaN field emitter arrays
JP4754164B2 (ja) 2003-08-08 2011-08-24 株式会社光波 半導体層
DE102004026654B4 (de) * 2004-06-01 2009-07-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikromechanisches HF-Schaltelement sowie Verfahren zur Herstellung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL129707C (enExample) * 1959-06-18
FR1323403A (fr) * 1959-06-18 1963-04-05 Monsanto Chemicals Production de pellicules épitaxiques
US3218205A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds
US3462323A (en) * 1966-12-05 1969-08-19 Monsanto Co Process for the preparation of compound semiconductors
US3565704A (en) * 1967-12-19 1971-02-23 Westinghouse Electric Corp Aluminum nitride films and processes for producing the same
US3540926A (en) * 1968-10-09 1970-11-17 Gen Electric Nitride insulating films deposited by reactive evaporation

Also Published As

Publication number Publication date
DE2102582B2 (de) 1974-11-28
DE2102582A1 (de) 1971-12-23
AU2341470A (en) 1972-06-22
US3922475A (en) 1975-11-25
FR2096394B1 (enExample) 1977-08-05
FR2096394A1 (enExample) 1972-02-18
CA942637A (en) 1974-02-26
SE378191B (enExample) 1975-08-25
GB1346323A (en) 1974-02-06
NL7100856A (enExample) 1971-12-24
JPS5236117B1 (enExample) 1977-09-13

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
8339 Ceased/non-payment of the annual fee