DE2101688A1 - Halbleiterspeicherzelle - Google Patents

Halbleiterspeicherzelle

Info

Publication number
DE2101688A1
DE2101688A1 DE19712101688 DE2101688A DE2101688A1 DE 2101688 A1 DE2101688 A1 DE 2101688A1 DE 19712101688 DE19712101688 DE 19712101688 DE 2101688 A DE2101688 A DE 2101688A DE 2101688 A1 DE2101688 A1 DE 2101688A1
Authority
DE
Germany
Prior art keywords
area
control electrode
field effect
region
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712101688
Other languages
German (de)
English (en)
Inventor
Thomas Laszlo Mountainview Cahf Palfi (V St A )
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2101688A1 publication Critical patent/DE2101688A1/de
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
DE19712101688 1970-02-27 1971-01-15 Halbleiterspeicherzelle Pending DE2101688A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1500470A 1970-02-27 1970-02-27

Publications (1)

Publication Number Publication Date
DE2101688A1 true DE2101688A1 (de) 1971-09-09

Family

ID=21769033

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712101688 Pending DE2101688A1 (de) 1970-02-27 1971-01-15 Halbleiterspeicherzelle

Country Status (3)

Country Link
US (1) US3610967A (https=)
DE (1) DE2101688A1 (https=)
FR (1) FR2081055B1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3702466A (en) * 1969-11-05 1972-11-07 Nippon Electric Co Semiconductor integrated circuit memory device utilizing insulated gate type semiconductor elements
CH519251A (de) * 1970-07-01 1972-02-15 Ibm Integrierte Halbleiterschaltung zur Speicherung von Daten
US3795859A (en) * 1972-07-03 1974-03-05 Ibm Method and apparatus for determining the electrical characteristics of a memory cell having field effect transistors
US4118642A (en) * 1975-06-26 1978-10-03 Motorola, Inc. Higher density insulated gate field effect circuit
US4091461A (en) * 1976-02-09 1978-05-23 Rockwell International Corporation High-speed memory cell with dual purpose data bus
DE2739283A1 (de) * 1977-08-31 1979-03-15 Siemens Ag Integrierbare halbleiterspeicherzelle
US4377856A (en) * 1980-08-15 1983-03-22 Burroughs Corporation Static semiconductor memory with reduced components and interconnections
SE9002558D0 (sv) * 1990-08-02 1990-08-02 Carlstedt Elektronik Ab Processor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US401319A (en) * 1889-04-09 Door-spring
US434068A (en) * 1890-08-12 Apparatus for trimming the fins from die-forged axles
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
US3510849A (en) * 1965-08-09 1970-05-05 Nippon Electric Co Memory devices of the semiconductor type having high-speed readout means
US3401319A (en) * 1966-03-08 1968-09-10 Gen Micro Electronics Inc Integrated latch circuit
US3434068A (en) * 1967-06-19 1969-03-18 Texas Instruments Inc Integrated circuit amplifier utilizing field-effect transistors having parallel reverse connected diodes as bias circuits therefor
DE1524873B2 (de) * 1967-10-05 1970-12-23 Ibm Deutschland Monolithische integrierte Speicherzelle mit kleiner Ruheleistung

Also Published As

Publication number Publication date
FR2081055B1 (https=) 1974-02-15
US3610967A (en) 1971-10-05
FR2081055A1 (https=) 1971-11-26

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