DE2101279C2 - Integrierter, lateraler Transistor - Google Patents

Integrierter, lateraler Transistor

Info

Publication number
DE2101279C2
DE2101279C2 DE2101279A DE2101279A DE2101279C2 DE 2101279 C2 DE2101279 C2 DE 2101279C2 DE 2101279 A DE2101279 A DE 2101279A DE 2101279 A DE2101279 A DE 2101279A DE 2101279 C2 DE2101279 C2 DE 2101279C2
Authority
DE
Germany
Prior art keywords
zone
semiconductor
emitter
collector
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2101279A
Other languages
German (de)
English (en)
Other versions
DE2101279A1 (de
Inventor
Arthur James Poughkeepsie N.Y. Rideout
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2101279A1 publication Critical patent/DE2101279A1/de
Application granted granted Critical
Publication of DE2101279C2 publication Critical patent/DE2101279C2/de
Expired legal-status Critical Current

Links

Classifications

    • H10W15/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W15/01—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/032—Diffusion length
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/096—Lateral transistor

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE2101279A 1970-01-20 1971-01-13 Integrierter, lateraler Transistor Expired DE2101279C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US437370A 1970-01-20 1970-01-20

Publications (2)

Publication Number Publication Date
DE2101279A1 DE2101279A1 (de) 1971-07-29
DE2101279C2 true DE2101279C2 (de) 1983-01-20

Family

ID=21710478

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2101279A Expired DE2101279C2 (de) 1970-01-20 1971-01-13 Integrierter, lateraler Transistor

Country Status (8)

Country Link
US (1) US3656034A (enExample)
JP (1) JPS516511B1 (enExample)
BE (1) BE761767A (enExample)
CA (1) CA927975A (enExample)
DE (1) DE2101279C2 (enExample)
FR (1) FR2077224B1 (enExample)
GB (1) GB1325081A (enExample)
SE (1) SE365906B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4196440A (en) * 1978-05-25 1980-04-01 International Business Machines Corporation Lateral PNP or NPN with a high gain
US4264382A (en) * 1978-05-25 1981-04-28 International Business Machines Corporation Method for making a lateral PNP or NPN with a high gain utilizing reactive ion etching of buried high conductivity regions
US4387310A (en) * 1980-08-15 1983-06-07 Communications Satellite Corporation Temperature stabilized semiconductor delay element
JPH05102175A (ja) * 1991-10-07 1993-04-23 Sharp Corp 半導体装置の製造方法
JP5151012B2 (ja) * 2005-05-30 2013-02-27 富士電機株式会社 半導体装置の製造方法
JP5048242B2 (ja) * 2005-11-30 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL83838C (enExample) * 1952-12-01 1957-01-15
FR1541490A (fr) * 1966-10-21 1968-10-04 Philips Nv Dispositif semi-conducteur et procédé pour sa fabrication
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes

Also Published As

Publication number Publication date
JPS516511B1 (enExample) 1976-02-28
DE2101279A1 (de) 1971-07-29
GB1325081A (en) 1973-08-01
FR2077224B1 (enExample) 1975-09-26
FR2077224A1 (enExample) 1971-10-22
CA927975A (en) 1973-06-05
SE365906B (enExample) 1974-04-01
BE761767A (fr) 1971-07-19
US3656034A (en) 1972-04-11

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Legal Events

Date Code Title Description
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee