BE761767A - Transistor lateral integre, a beta et a largeur de bande ameliores - Google Patents

Transistor lateral integre, a beta et a largeur de bande ameliores

Info

Publication number
BE761767A
BE761767A BE761767A BE761767A BE761767A BE 761767 A BE761767 A BE 761767A BE 761767 A BE761767 A BE 761767A BE 761767 A BE761767 A BE 761767A BE 761767 A BE761767 A BE 761767A
Authority
BE
Belgium
Prior art keywords
beta
side transistor
integrated side
enhanced bandwidth
bandwidth
Prior art date
Application number
BE761767A
Other languages
English (en)
Inventor
A J Rideout
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BE761767A publication Critical patent/BE761767A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/032—Diffusion length
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/096—Lateral transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
BE761767A 1970-01-20 1971-01-19 Transistor lateral integre, a beta et a largeur de bande ameliores BE761767A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US437370A 1970-01-20 1970-01-20

Publications (1)

Publication Number Publication Date
BE761767A true BE761767A (fr) 1971-07-19

Family

ID=21710478

Family Applications (1)

Application Number Title Priority Date Filing Date
BE761767A BE761767A (fr) 1970-01-20 1971-01-19 Transistor lateral integre, a beta et a largeur de bande ameliores

Country Status (8)

Country Link
US (1) US3656034A (fr)
JP (1) JPS516511B1 (fr)
BE (1) BE761767A (fr)
CA (1) CA927975A (fr)
DE (1) DE2101279C2 (fr)
FR (1) FR2077224B1 (fr)
GB (1) GB1325081A (fr)
SE (1) SE365906B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264382A (en) * 1978-05-25 1981-04-28 International Business Machines Corporation Method for making a lateral PNP or NPN with a high gain utilizing reactive ion etching of buried high conductivity regions
US4196440A (en) * 1978-05-25 1980-04-01 International Business Machines Corporation Lateral PNP or NPN with a high gain
US4387310A (en) * 1980-08-15 1983-06-07 Communications Satellite Corporation Temperature stabilized semiconductor delay element
JPH05102175A (ja) * 1991-10-07 1993-04-23 Sharp Corp 半導体装置の製造方法
JP5151012B2 (ja) * 2005-05-30 2013-02-27 富士電機株式会社 半導体装置の製造方法
JP5048242B2 (ja) * 2005-11-30 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL83838C (fr) * 1952-12-01 1957-01-15
FR1541490A (fr) * 1966-10-21 1968-10-04 Philips Nv Dispositif semi-conducteur et procédé pour sa fabrication
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes

Also Published As

Publication number Publication date
SE365906B (fr) 1974-04-01
GB1325081A (en) 1973-08-01
US3656034A (en) 1972-04-11
DE2101279C2 (de) 1983-01-20
FR2077224A1 (fr) 1971-10-22
FR2077224B1 (fr) 1975-09-26
JPS516511B1 (fr) 1976-02-28
CA927975A (en) 1973-06-05
DE2101279A1 (de) 1971-07-29

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