DE2059360A1 - Verfahren zum Herstellen homogener Staeben aus Halbleitermaterial - Google Patents
Verfahren zum Herstellen homogener Staeben aus HalbleitermaterialInfo
- Publication number
- DE2059360A1 DE2059360A1 DE19702059360 DE2059360A DE2059360A1 DE 2059360 A1 DE2059360 A1 DE 2059360A1 DE 19702059360 DE19702059360 DE 19702059360 DE 2059360 A DE2059360 A DE 2059360A DE 2059360 A1 DE2059360 A1 DE 2059360A1
- Authority
- DE
- Germany
- Prior art keywords
- tube
- semiconductor material
- filling
- melting
- melting zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims description 31
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 230000008018 melting Effects 0.000 claims description 27
- 238000002844 melting Methods 0.000 claims description 27
- 239000002019 doping agent Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000000155 melt Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 238000004857 zone melting Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000002485 urinary effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/912—Replenishing liquid precursor, other than a moving zone
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702059360 DE2059360A1 (de) | 1970-12-02 | 1970-12-02 | Verfahren zum Herstellen homogener Staeben aus Halbleitermaterial |
| NL7113983A NL7113983A (enExample) | 1970-12-02 | 1971-10-12 | |
| GB5291571A GB1311458A (en) | 1970-12-02 | 1971-11-15 | Production of homogeneous rods of semiconductor material |
| IT31679/71A IT941389B (it) | 1970-12-02 | 1971-11-26 | Processo per la preparazione di bacchette omogenee di materiale semiconduttore |
| FR7143016A FR2117202A5 (enExample) | 1970-12-02 | 1971-12-01 | |
| DK588071A DK136846C (da) | 1970-12-02 | 1971-12-01 | Fremgangsmaade til fremstilling af stave af doteret halvledermateriale ved zonesmeltning |
| BE776149A BE776149A (fr) | 1970-12-02 | 1971-12-02 | Procede de fabrication de barreaux homogenes en matiere semi-conductrice |
| US00204188A US3781209A (en) | 1970-12-02 | 1971-12-02 | Method of producing homogeneous rods of semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702059360 DE2059360A1 (de) | 1970-12-02 | 1970-12-02 | Verfahren zum Herstellen homogener Staeben aus Halbleitermaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2059360A1 true DE2059360A1 (de) | 1972-06-08 |
Family
ID=5789794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702059360 Pending DE2059360A1 (de) | 1970-12-02 | 1970-12-02 | Verfahren zum Herstellen homogener Staeben aus Halbleitermaterial |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3781209A (enExample) |
| BE (1) | BE776149A (enExample) |
| DE (1) | DE2059360A1 (enExample) |
| DK (1) | DK136846C (enExample) |
| FR (1) | FR2117202A5 (enExample) |
| GB (1) | GB1311458A (enExample) |
| IT (1) | IT941389B (enExample) |
| NL (1) | NL7113983A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3989468A (en) * | 1973-11-22 | 1976-11-02 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| DE2358300C3 (de) * | 1973-11-22 | 1978-07-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen |
| USRE29824E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| US3996096A (en) * | 1973-11-22 | 1976-12-07 | Siemens Aktiengesellschaft | Method for crucible-free zone melting of semiconductor crystal rods |
| US3996011A (en) * | 1973-11-22 | 1976-12-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| US3988197A (en) * | 1973-11-22 | 1976-10-26 | Siemens Aktiengesellschaft | Crucible-free zone melting of semiconductor crystal rods including oscillation dampening |
| USRE29825E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| US3961906A (en) * | 1973-11-22 | 1976-06-08 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material |
| US4186046A (en) * | 1976-09-29 | 1980-01-29 | The United States Of America As Represented By The Secretary Of The Army | Growing doped single crystal ceramic materials |
| US5217565A (en) * | 1991-11-13 | 1993-06-08 | Wisconsin Alumni Research Foundation | Contactless heater floating zone refining and crystal growth |
| JP2922078B2 (ja) * | 1993-03-17 | 1999-07-19 | 株式会社トクヤマ | シリコンロッドの製造方法 |
-
1970
- 1970-12-02 DE DE19702059360 patent/DE2059360A1/de active Pending
-
1971
- 1971-10-12 NL NL7113983A patent/NL7113983A/xx unknown
- 1971-11-15 GB GB5291571A patent/GB1311458A/en not_active Expired
- 1971-11-26 IT IT31679/71A patent/IT941389B/it active
- 1971-12-01 DK DK588071A patent/DK136846C/da active
- 1971-12-01 FR FR7143016A patent/FR2117202A5/fr not_active Expired
- 1971-12-02 US US00204188A patent/US3781209A/en not_active Expired - Lifetime
- 1971-12-02 BE BE776149A patent/BE776149A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2117202A5 (enExample) | 1972-07-21 |
| DK136846C (da) | 1978-05-22 |
| NL7113983A (enExample) | 1972-06-06 |
| BE776149A (fr) | 1972-06-02 |
| GB1311458A (en) | 1973-03-28 |
| US3781209A (en) | 1973-12-25 |
| DK136846B (da) | 1977-12-05 |
| IT941389B (it) | 1973-03-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHW | Rejection |