BE776149A - Procede de fabrication de barreaux homogenes en matiere semi-conductrice - Google Patents
Procede de fabrication de barreaux homogenes en matiere semi-conductriceInfo
- Publication number
- BE776149A BE776149A BE776149A BE776149A BE776149A BE 776149 A BE776149 A BE 776149A BE 776149 A BE776149 A BE 776149A BE 776149 A BE776149 A BE 776149A BE 776149 A BE776149 A BE 776149A
- Authority
- BE
- Belgium
- Prior art keywords
- bars
- semiconductor material
- homogenous
- manufacturing
- manufacturing homogenous
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/912—Replenishing liquid precursor, other than a moving zone
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19702059360 DE2059360A1 (de) | 1970-12-02 | 1970-12-02 | Verfahren zum Herstellen homogener Staeben aus Halbleitermaterial |
Publications (1)
Publication Number | Publication Date |
---|---|
BE776149A true BE776149A (fr) | 1972-06-02 |
Family
ID=5789794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE776149A BE776149A (fr) | 1970-12-02 | 1971-12-02 | Procede de fabrication de barreaux homogenes en matiere semi-conductrice |
Country Status (8)
Country | Link |
---|---|
US (1) | US3781209A (fr) |
BE (1) | BE776149A (fr) |
DE (1) | DE2059360A1 (fr) |
DK (1) | DK136846C (fr) |
FR (1) | FR2117202A5 (fr) |
GB (1) | GB1311458A (fr) |
IT (1) | IT941389B (fr) |
NL (1) | NL7113983A (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3996011A (en) * | 1973-11-22 | 1976-12-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
US3961906A (en) * | 1973-11-22 | 1976-06-08 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material |
US3988197A (en) * | 1973-11-22 | 1976-10-26 | Siemens Aktiengesellschaft | Crucible-free zone melting of semiconductor crystal rods including oscillation dampening |
US3989468A (en) * | 1973-11-22 | 1976-11-02 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
USRE29825E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
DE2358300C3 (de) * | 1973-11-22 | 1978-07-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen |
USRE29824E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
US3996096A (en) * | 1973-11-22 | 1976-12-07 | Siemens Aktiengesellschaft | Method for crucible-free zone melting of semiconductor crystal rods |
US4186046A (en) * | 1976-09-29 | 1980-01-29 | The United States Of America As Represented By The Secretary Of The Army | Growing doped single crystal ceramic materials |
US5217565A (en) * | 1991-11-13 | 1993-06-08 | Wisconsin Alumni Research Foundation | Contactless heater floating zone refining and crystal growth |
JP2922078B2 (ja) * | 1993-03-17 | 1999-07-19 | 株式会社トクヤマ | シリコンロッドの製造方法 |
-
1970
- 1970-12-02 DE DE19702059360 patent/DE2059360A1/de active Pending
-
1971
- 1971-10-12 NL NL7113983A patent/NL7113983A/xx unknown
- 1971-11-15 GB GB5291571A patent/GB1311458A/en not_active Expired
- 1971-11-26 IT IT31679/71A patent/IT941389B/it active
- 1971-12-01 FR FR7143016A patent/FR2117202A5/fr not_active Expired
- 1971-12-01 DK DK588071A patent/DK136846C/da active
- 1971-12-02 BE BE776149A patent/BE776149A/fr unknown
- 1971-12-02 US US00204188A patent/US3781209A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2117202A5 (fr) | 1972-07-21 |
NL7113983A (fr) | 1972-06-06 |
DK136846C (da) | 1978-05-22 |
US3781209A (en) | 1973-12-25 |
DE2059360A1 (de) | 1972-06-08 |
DK136846B (da) | 1977-12-05 |
GB1311458A (en) | 1973-03-28 |
IT941389B (it) | 1973-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BE790547R (fr) | Procede de fabrication de copolymeres | |
BE758296A (fr) | Procede de fabrication d'hexamethylenediamine | |
BE798446A (fr) | Matiere ceramique et son procede de fabrication | |
BE762089A (fr) | Machine dynamo-electrique perfectionnee et procede pour sa fabrication | |
BE776149A (fr) | Procede de fabrication de barreaux homogenes en matiere semi-conductrice | |
BE759720A (fr) | Articles de rembourrage perfectionnes et leur procede de fabrication | |
BE771841A (fr) | Procede de fabrication de copolymeres | |
BE746114A (fr) | Procede de fabrication de poly-beta-alanine | |
BE763095A (fr) | Procede de fabrication de tuyaux nervures en matiere synthetique renforcee faisant prise | |
BE781835A (fr) | Machine et procede de fabrication de panneaux | |
BE768643A (fr) | Procede de fabrication de gaufrettes semiconductrices ultraminces | |
BE763096A (fr) | Procede de fabrication de tuyaux en matiere synthetique renforcee faisant prise | |
BE775566A (fr) | Procede de fabrication de bobines enveloppees de matiere synthetique | |
BE793841A (fr) | Articles de rembourrage perfectionnes et leur procede de fabrication | |
BE802553A (fr) | Procede de fabrication de compositions thermo-fusibles et compositions en resultant | |
BE755689A (fr) | Procede de fabrication de nouvelles 7 beta-alkyl-19- nortestosterones | |
BE755928A (fr) | Procede de fabrication de supraconducteurs | |
BE769087R (fr) | Fabrication de matiere en | |
BE753334A (fr) | Procede de fabrication de para-tertio-butylphenol | |
BE773736A (fr) | Procede de fabrication de composes insatures | |
BE775909A (fr) | Procede de fabrication de contacts schottky | |
BE745305A (fr) | Procede de fabrication de cristaux filiformes | |
BE754175A (fr) | Procede de fabrication de tripolyphosphates | |
BE758756A (fr) | Procede de fabrication de sulfitobetaines | |
BE771825A (fr) | Procede de fabrication de denrees alimentaires |