FR2117202A5 - - Google Patents

Info

Publication number
FR2117202A5
FR2117202A5 FR7143016A FR7143016A FR2117202A5 FR 2117202 A5 FR2117202 A5 FR 2117202A5 FR 7143016 A FR7143016 A FR 7143016A FR 7143016 A FR7143016 A FR 7143016A FR 2117202 A5 FR2117202 A5 FR 2117202A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7143016A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Application granted granted Critical
Publication of FR2117202A5 publication Critical patent/FR2117202A5/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
FR7143016A 1970-12-02 1971-12-01 Expired FR2117202A5 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702059360 DE2059360A1 (de) 1970-12-02 1970-12-02 Verfahren zum Herstellen homogener Staeben aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
FR2117202A5 true FR2117202A5 (enExample) 1972-07-21

Family

ID=5789794

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7143016A Expired FR2117202A5 (enExample) 1970-12-02 1971-12-01

Country Status (8)

Country Link
US (1) US3781209A (enExample)
BE (1) BE776149A (enExample)
DE (1) DE2059360A1 (enExample)
DK (1) DK136846C (enExample)
FR (1) FR2117202A5 (enExample)
GB (1) GB1311458A (enExample)
IT (1) IT941389B (enExample)
NL (1) NL7113983A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3989468A (en) * 1973-11-22 1976-11-02 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
DE2358300C3 (de) * 1973-11-22 1978-07-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen
USRE29824E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3996096A (en) * 1973-11-22 1976-12-07 Siemens Aktiengesellschaft Method for crucible-free zone melting of semiconductor crystal rods
US3996011A (en) * 1973-11-22 1976-12-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3988197A (en) * 1973-11-22 1976-10-26 Siemens Aktiengesellschaft Crucible-free zone melting of semiconductor crystal rods including oscillation dampening
USRE29825E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3961906A (en) * 1973-11-22 1976-06-08 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material
US4186046A (en) * 1976-09-29 1980-01-29 The United States Of America As Represented By The Secretary Of The Army Growing doped single crystal ceramic materials
US5217565A (en) * 1991-11-13 1993-06-08 Wisconsin Alumni Research Foundation Contactless heater floating zone refining and crystal growth
JP2922078B2 (ja) * 1993-03-17 1999-07-19 株式会社トクヤマ シリコンロッドの製造方法

Also Published As

Publication number Publication date
DE2059360A1 (de) 1972-06-08
DK136846C (da) 1978-05-22
NL7113983A (enExample) 1972-06-06
BE776149A (fr) 1972-06-02
GB1311458A (en) 1973-03-28
US3781209A (en) 1973-12-25
DK136846B (da) 1977-12-05
IT941389B (it) 1973-03-01

Similar Documents

Publication Publication Date Title
FR2099380A5 (enExample)
FR2098407A1 (enExample)
JPS4937677B1 (enExample)
FR2098432A3 (enExample)
FR2097788A5 (enExample)
FR2097927A5 (enExample)
FR2097885A5 (enExample)
FR2097543A5 (enExample)
FR2097811A5 (enExample)
FR2097819A5 (enExample)
FR2097350A5 (enExample)
AU456544B2 (enExample)
FR2097621A5 (enExample)
JPS5012906B1 (enExample)
JPS4939932Y1 (enExample)
JPS4939943B1 (enExample)
JPS4937479B1 (enExample)
FR2097602A5 (enExample)
FR2097430A5 (enExample)
FR2097829A5 (enExample)
JPS4940939Y1 (enExample)
JPS493742B1 (enExample)
JPS4937779B1 (enExample)
JPS493787Y1 (enExample)
JPS4937895B1 (enExample)

Legal Events

Date Code Title Description
ST Notification of lapse