GB1311458A - Production of homogeneous rods of semiconductor material - Google Patents

Production of homogeneous rods of semiconductor material

Info

Publication number
GB1311458A
GB1311458A GB5291571A GB5291571A GB1311458A GB 1311458 A GB1311458 A GB 1311458A GB 5291571 A GB5291571 A GB 5291571A GB 5291571 A GB5291571 A GB 5291571A GB 1311458 A GB1311458 A GB 1311458A
Authority
GB
United Kingdom
Prior art keywords
tube
semiconductor material
zone
melting
cylindrical core
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5291571A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1311458A publication Critical patent/GB1311458A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
GB5291571A 1970-12-02 1971-11-15 Production of homogeneous rods of semiconductor material Expired GB1311458A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702059360 DE2059360A1 (de) 1970-12-02 1970-12-02 Verfahren zum Herstellen homogener Staeben aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
GB1311458A true GB1311458A (en) 1973-03-28

Family

ID=5789794

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5291571A Expired GB1311458A (en) 1970-12-02 1971-11-15 Production of homogeneous rods of semiconductor material

Country Status (8)

Country Link
US (1) US3781209A (enExample)
BE (1) BE776149A (enExample)
DE (1) DE2059360A1 (enExample)
DK (1) DK136846C (enExample)
FR (1) FR2117202A5 (enExample)
GB (1) GB1311458A (enExample)
IT (1) IT941389B (enExample)
NL (1) NL7113983A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3989468A (en) * 1973-11-22 1976-11-02 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
DE2358300C3 (de) * 1973-11-22 1978-07-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen
USRE29824E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3996096A (en) * 1973-11-22 1976-12-07 Siemens Aktiengesellschaft Method for crucible-free zone melting of semiconductor crystal rods
US3996011A (en) * 1973-11-22 1976-12-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3988197A (en) * 1973-11-22 1976-10-26 Siemens Aktiengesellschaft Crucible-free zone melting of semiconductor crystal rods including oscillation dampening
USRE29825E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3961906A (en) * 1973-11-22 1976-06-08 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material
US4186046A (en) * 1976-09-29 1980-01-29 The United States Of America As Represented By The Secretary Of The Army Growing doped single crystal ceramic materials
US5217565A (en) * 1991-11-13 1993-06-08 Wisconsin Alumni Research Foundation Contactless heater floating zone refining and crystal growth
JP2922078B2 (ja) * 1993-03-17 1999-07-19 株式会社トクヤマ シリコンロッドの製造方法

Also Published As

Publication number Publication date
FR2117202A5 (enExample) 1972-07-21
DE2059360A1 (de) 1972-06-08
DK136846C (da) 1978-05-22
NL7113983A (enExample) 1972-06-06
BE776149A (fr) 1972-06-02
US3781209A (en) 1973-12-25
DK136846B (da) 1977-12-05
IT941389B (it) 1973-03-01

Similar Documents

Publication Publication Date Title
US2876147A (en) Method of and apparatus for producing semiconductor material
GB1311458A (en) Production of homogeneous rods of semiconductor material
GB908951A (en) Production of semiconductors and the like
GB1430883A (en) Non-crucible zone melting of crystalline semiconductor rods
GB958870A (en) Improvements in and relating to apparatus for floating zone melting
GB1044592A (en) A method of melting a rod of crystalline material zone by zone
GB1345423A (en) Tool setting apparatus for a multiple tool holder
GB1349106A (en) Apparatus for the non-crucible zone melting of semiconductor rods
GB1375132A (enExample)
GB1065187A (en) A method of producing a rod of semi-conductor material
GB1095587A (enExample)
GB1081827A (en) Improvements in or relating to a floating zone process
GB1361710A (en) Vertical crucible-free zone melting
GB1319431A (en) Non-crucible zone melting of crystalline rods
YU13374A (en) Process for obtaining novel leurosine derivatives
GB1164940A (en) A Method of Melting a Rod of Crystalline Material Zone-by-Zone.
GB1346548A (en) Manufacture of a monocrystalline semiconductor rod
GB1284008A (en) Improvements in or relating to the non-crucible zone melting of a crystalline rod
GB1350166A (en) Non-crucible zone melting of crystalline semiconductor rods
GB1278137A (en) Improvements in or relating to apparatus for molding hollow objects from thermoplastic materials
GB1284009A (en) Improvements in or relating to the non-crucible zone melting of a crystalline rod
GB1279495A (en) Silicon monocrystal bars
JP2577585B2 (ja) 石英ガラス管の製造方法
GB1359336A (en) Apparatus for non-crucible zone melting
GB1483883A (en) Non-crucible zone melting of crystalline semiconductor rods

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee