DE2052221C3 - Verfahren zum Erzeugen einer Siliciumoxidschicht auf einem Süiciumsubstrat und Vorrichtung zur Durchführung dieses Verfahrens - Google Patents

Verfahren zum Erzeugen einer Siliciumoxidschicht auf einem Süiciumsubstrat und Vorrichtung zur Durchführung dieses Verfahrens

Info

Publication number
DE2052221C3
DE2052221C3 DE2052221A DE2052221A DE2052221C3 DE 2052221 C3 DE2052221 C3 DE 2052221C3 DE 2052221 A DE2052221 A DE 2052221A DE 2052221 A DE2052221 A DE 2052221A DE 2052221 C3 DE2052221 C3 DE 2052221C3
Authority
DE
Germany
Prior art keywords
silicon
silicon substrate
container
oxide layer
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2052221A
Other languages
German (de)
English (en)
Other versions
DE2052221B2 (de
DE2052221A1 (de
Inventor
Charles Theodore Centerville Ohio Naber (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Publication of DE2052221A1 publication Critical patent/DE2052221A1/de
Publication of DE2052221B2 publication Critical patent/DE2052221B2/de
Application granted granted Critical
Publication of DE2052221C3 publication Critical patent/DE2052221C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C23C8/12—Oxidising using elemental oxygen or ozone
    • H10D64/01336—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/662—
    • H10P14/6682—
    • H10P14/69433—
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/6334—
    • H10P14/69215—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE2052221A 1969-10-27 1970-10-23 Verfahren zum Erzeugen einer Siliciumoxidschicht auf einem Süiciumsubstrat und Vorrichtung zur Durchführung dieses Verfahrens Expired DE2052221C3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86969969A 1969-10-27 1969-10-27
US96969969A 1969-10-27 1969-10-27

Publications (3)

Publication Number Publication Date
DE2052221A1 DE2052221A1 (de) 1971-05-19
DE2052221B2 DE2052221B2 (de) 1977-07-07
DE2052221C3 true DE2052221C3 (de) 1978-03-02

Family

ID=27128132

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2052221A Expired DE2052221C3 (de) 1969-10-27 1970-10-23 Verfahren zum Erzeugen einer Siliciumoxidschicht auf einem Süiciumsubstrat und Vorrichtung zur Durchführung dieses Verfahrens

Country Status (5)

Country Link
US (1) US3647535A (enExample)
CH (1) CH540993A (enExample)
DE (1) DE2052221C3 (enExample)
FR (1) FR2066517A5 (enExample)
GB (1) GB1274986A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3892891A (en) * 1970-06-30 1975-07-01 Rca Corp Provision of reproducible thin layers of silicon dioxide
US3837905A (en) * 1971-09-22 1974-09-24 Gen Motors Corp Thermal oxidation of silicon
US3984587A (en) * 1973-07-23 1976-10-05 Rca Corporation Chemical vapor deposition of luminescent films
US4098924A (en) * 1976-10-19 1978-07-04 Westinghouse Electric Corp. Gate fabrication method for mnos memory devices
US4167915A (en) * 1977-03-09 1979-09-18 Atomel Corporation High-pressure, high-temperature gaseous chemical apparatus
DE2723500C2 (de) * 1977-05-25 1984-08-30 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum Abscheiden von Siliziumdioxydschichten auf Halbleiteranordnungen
US4376796A (en) * 1981-10-27 1983-03-15 Thermco Products Corporation Processing silicon wafers employing processing gas atmospheres of similar molecular weight
FR2547775B1 (fr) * 1983-06-23 1987-12-18 Metalem Sa Procede de decoration d'un article, application d'un procede de traitement d'un element de silicium, utilisation d'une plaque de silicium traitee et article decore
US4510172A (en) * 1984-05-29 1985-04-09 International Business Machines Corporation Technique for thin insulator growth
US4638762A (en) * 1985-08-30 1987-01-27 At&T Technologies, Inc. Chemical vapor deposition method and apparatus
US4776925A (en) * 1987-04-30 1988-10-11 The Trustees Of Columbia University In The City Of New York Method of forming dielectric thin films on silicon by low energy ion beam bombardment
JP2768952B2 (ja) * 1988-08-04 1998-06-25 忠弘 大見 金属酸化処理装置及び金属酸化処理方法
JP2907095B2 (ja) * 1996-02-28 1999-06-21 日本電気株式会社 半導体装置の製造方法
US7101812B2 (en) * 2002-09-20 2006-09-05 Mattson Technology, Inc. Method of forming and/or modifying a dielectric film on a semiconductor surface

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3158505A (en) * 1962-07-23 1964-11-24 Fairchild Camera Instr Co Method of placing thick oxide coatings on silicon and article
US3385729A (en) * 1964-10-26 1968-05-28 North American Rockwell Composite dual dielectric for isolation in integrated circuits and method of making
US3426422A (en) * 1965-10-23 1969-02-11 Fairchild Camera Instr Co Method of making stable semiconductor devices
US3460003A (en) * 1967-01-30 1969-08-05 Corning Glass Works Metallized semiconductor device with fired-on glaze consisting of 25-35% pbo,10-15% b2o3,5-10% al2o3,and the balance sio2

Also Published As

Publication number Publication date
GB1274986A (en) 1972-05-17
CH540993A (de) 1973-10-15
US3647535A (en) 1972-03-07
DE2052221B2 (de) 1977-07-07
FR2066517A5 (enExample) 1971-08-06
DE2052221A1 (de) 1971-05-19

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee