DE2049908B2 - Mehrebenenverdrahtung fuer halbleiterbauelemente - Google Patents

Mehrebenenverdrahtung fuer halbleiterbauelemente

Info

Publication number
DE2049908B2
DE2049908B2 DE19702049908 DE2049908A DE2049908B2 DE 2049908 B2 DE2049908 B2 DE 2049908B2 DE 19702049908 DE19702049908 DE 19702049908 DE 2049908 A DE2049908 A DE 2049908A DE 2049908 B2 DE2049908 B2 DE 2049908B2
Authority
DE
Germany
Prior art keywords
semi
level wiring
conductor components
conductor
components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19702049908
Other languages
German (de)
English (en)
Other versions
DE2049908A1 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE2049908A1 publication Critical patent/DE2049908A1/de
Publication of DE2049908B2 publication Critical patent/DE2049908B2/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE19702049908 1969-10-15 1970-10-10 Mehrebenenverdrahtung fuer halbleiterbauelemente Ceased DE2049908B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86655569A 1969-10-15 1969-10-15

Publications (2)

Publication Number Publication Date
DE2049908A1 DE2049908A1 (de) 1971-04-22
DE2049908B2 true DE2049908B2 (de) 1976-03-25

Family

ID=25347860

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702049908 Ceased DE2049908B2 (de) 1969-10-15 1970-10-10 Mehrebenenverdrahtung fuer halbleiterbauelemente

Country Status (3)

Country Link
DE (1) DE2049908B2 (enExample)
FR (1) FR2066013A5 (enExample)
GB (1) GB1286737A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2709986A1 (de) * 1976-04-29 1977-11-17 Ibm Verfahren zum herstellen von koplanaren schichten aus duennen filmen
EP0103690A1 (de) * 1982-07-29 1984-03-28 Siemens Aktiengesellschaft Verfahren zum Herstellen einer Isolierschicht zwischen Metallisierungsebenen von integrierten Halbleiterschaltungen
DE3339957A1 (de) * 1982-11-04 1984-07-12 Tokyo Shibaura Denki K.K., Kawasaki Verfahren zur herstellung eines halbleiterbauelementes

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960870A (enExample) * 1972-10-16 1974-06-13
US3844831A (en) * 1972-10-27 1974-10-29 Ibm Forming a compact multilevel interconnection metallurgy system for semi-conductor devices
US3985597A (en) * 1975-05-01 1976-10-12 International Business Machines Corporation Process for forming passivated metal interconnection system with a planar surface
US4561169A (en) * 1982-07-30 1985-12-31 Hitachi, Ltd. Method of manufacturing semiconductor device utilizing multilayer mask
US5084414A (en) * 1985-03-15 1992-01-28 Hewlett-Packard Company Metal interconnection system with a planar surface
ATE98814T1 (de) * 1986-09-30 1994-01-15 Philips Nv Verfahren zur herstellung einer planarleiterbahn durch isotropes abscheiden von leitendem werkstoff.
US5063175A (en) * 1986-09-30 1991-11-05 North American Philips Corp., Signetics Division Method for manufacturing a planar electrical interconnection utilizing isotropic deposition of conductive material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2709986A1 (de) * 1976-04-29 1977-11-17 Ibm Verfahren zum herstellen von koplanaren schichten aus duennen filmen
EP0103690A1 (de) * 1982-07-29 1984-03-28 Siemens Aktiengesellschaft Verfahren zum Herstellen einer Isolierschicht zwischen Metallisierungsebenen von integrierten Halbleiterschaltungen
DE3339957A1 (de) * 1982-11-04 1984-07-12 Tokyo Shibaura Denki K.K., Kawasaki Verfahren zur herstellung eines halbleiterbauelementes

Also Published As

Publication number Publication date
GB1286737A (en) 1972-08-23
FR2066013A5 (enExample) 1971-08-06
DE2049908A1 (de) 1971-04-22

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Legal Events

Date Code Title Description
BHV Refusal