DE2049507C3 - Lichtempfindliche Halbleiteranordnung - Google Patents

Lichtempfindliche Halbleiteranordnung

Info

Publication number
DE2049507C3
DE2049507C3 DE2049507A DE2049507A DE2049507C3 DE 2049507 C3 DE2049507 C3 DE 2049507C3 DE 2049507 A DE2049507 A DE 2049507A DE 2049507 A DE2049507 A DE 2049507A DE 2049507 C3 DE2049507 C3 DE 2049507C3
Authority
DE
Germany
Prior art keywords
semiconductor
semiconductor substrate
photosensitive
doped
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2049507A
Other languages
German (de)
English (en)
Other versions
DE2049507B2 (de
DE2049507A1 (de
Inventor
Hans-Eberhard Dipl.-Phys. Dr. 8000 Muenchen Bergt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2049507A priority Critical patent/DE2049507C3/de
Priority to CH1248771A priority patent/CH528151A/de
Priority to GB4367371A priority patent/GB1320822A/en
Priority to AT839471A priority patent/AT313996B/de
Priority to US00186969A priority patent/US3760240A/en
Priority to IT29567/71A priority patent/IT938972B/it
Priority to FR7136063A priority patent/FR2110259B1/fr
Priority to CA124,661A priority patent/CA946501A/en
Priority to SE12767/71A priority patent/SE362985B/xx
Priority to JP7936671A priority patent/JPS5513148B1/ja
Priority to NL7113857A priority patent/NL7113857A/xx
Publication of DE2049507A1 publication Critical patent/DE2049507A1/de
Publication of DE2049507B2 publication Critical patent/DE2049507B2/de
Application granted granted Critical
Publication of DE2049507C3 publication Critical patent/DE2049507C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10P95/00—

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE2049507A 1970-10-08 1970-10-08 Lichtempfindliche Halbleiteranordnung Expired DE2049507C3 (de)

Priority Applications (11)

Application Number Priority Date Filing Date Title
DE2049507A DE2049507C3 (de) 1970-10-08 1970-10-08 Lichtempfindliche Halbleiteranordnung
CH1248771A CH528151A (de) 1970-10-08 1971-08-26 Lichtempfindliche Halbleiteranordnung
GB4367371A GB1320822A (en) 1970-10-08 1971-09-20 Lifht-sensitive semiconductor arrangements
AT839471A AT313996B (de) 1970-10-08 1971-09-28 Lichtempfindliche Halbleiteranordnung
IT29567/71A IT938972B (it) 1970-10-08 1971-10-06 Disposizione di semiconduttori fotosensibile
US00186969A US3760240A (en) 1970-10-08 1971-10-06 Light-sensitive semiconductor device
FR7136063A FR2110259B1 (enExample) 1970-10-08 1971-10-07
CA124,661A CA946501A (en) 1970-10-08 1971-10-07 Light-sensitive semiconductors
SE12767/71A SE362985B (enExample) 1970-10-08 1971-10-08
JP7936671A JPS5513148B1 (enExample) 1970-10-08 1971-10-08
NL7113857A NL7113857A (enExample) 1970-10-08 1971-10-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2049507A DE2049507C3 (de) 1970-10-08 1970-10-08 Lichtempfindliche Halbleiteranordnung

Publications (3)

Publication Number Publication Date
DE2049507A1 DE2049507A1 (de) 1972-04-13
DE2049507B2 DE2049507B2 (de) 1979-03-08
DE2049507C3 true DE2049507C3 (de) 1979-11-08

Family

ID=5784573

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2049507A Expired DE2049507C3 (de) 1970-10-08 1970-10-08 Lichtempfindliche Halbleiteranordnung

Country Status (11)

Country Link
US (1) US3760240A (enExample)
JP (1) JPS5513148B1 (enExample)
AT (1) AT313996B (enExample)
CA (1) CA946501A (enExample)
CH (1) CH528151A (enExample)
DE (1) DE2049507C3 (enExample)
FR (1) FR2110259B1 (enExample)
GB (1) GB1320822A (enExample)
IT (1) IT938972B (enExample)
NL (1) NL7113857A (enExample)
SE (1) SE362985B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1419143A (en) * 1972-04-04 1975-12-24 Omron Tateisi Electronics Co Semiconductor photoelectric device
JPS5120277B2 (enExample) * 1972-08-17 1976-06-23
JPS5824951B2 (ja) * 1974-10-09 1983-05-24 ソニー株式会社 コウガクソウチ
US3948682A (en) * 1974-10-31 1976-04-06 Ninel Mineevna Bordina Semiconductor photoelectric generator
US3988613A (en) * 1975-05-02 1976-10-26 General Electric Company Radiation sensing and charge storage devices
US4038104A (en) * 1976-06-07 1977-07-26 Kabushiki Kaisha Suwa Seikosha Solar battery
US4970567A (en) * 1987-11-23 1990-11-13 Santa Barbara Research Center Method and apparatus for detecting infrared radiation
JP2528191B2 (ja) * 1987-11-23 1996-08-28 サンタ・バーバラ・リサーチ・センター 赤外線放射検出装置
US5075743A (en) * 1989-06-06 1991-12-24 Cornell Research Foundation, Inc. Quantum well optical device on silicon
US5212395A (en) * 1992-03-02 1993-05-18 At&T Bell Laboratories P-I-N photodiodes with transparent conductive contacts
JP2000150652A (ja) * 1998-09-03 2000-05-30 Seiko Epson Corp 半導体装置およびその製造方法
WO2011075579A1 (en) * 2009-12-18 2011-06-23 First Solar, Inc. Photovoltaic device including doped layer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
NL6816923A (enExample) * 1968-11-27 1970-05-29

Also Published As

Publication number Publication date
CA946501A (en) 1974-04-30
SE362985B (enExample) 1973-12-27
IT938972B (it) 1973-02-10
CH528151A (de) 1972-09-15
AT313996B (de) 1974-03-11
DE2049507B2 (de) 1979-03-08
DE2049507A1 (de) 1972-04-13
FR2110259B1 (enExample) 1977-04-22
GB1320822A (en) 1973-06-20
US3760240A (en) 1973-09-18
NL7113857A (enExample) 1972-04-11
FR2110259A1 (enExample) 1972-06-02
JPS5513148B1 (enExample) 1980-04-07

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee