GB1320822A - Lifht-sensitive semiconductor arrangements - Google Patents

Lifht-sensitive semiconductor arrangements

Info

Publication number
GB1320822A
GB1320822A GB4367371A GB1320822DA GB1320822A GB 1320822 A GB1320822 A GB 1320822A GB 4367371 A GB4367371 A GB 4367371A GB 1320822D A GB1320822D A GB 1320822DA GB 1320822 A GB1320822 A GB 1320822A
Authority
GB
United Kingdom
Prior art keywords
regions
sno
semi
strips
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4367371A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1320822A publication Critical patent/GB1320822A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10P95/00—

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
GB4367371A 1970-10-08 1971-09-20 Lifht-sensitive semiconductor arrangements Expired GB1320822A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2049507A DE2049507C3 (de) 1970-10-08 1970-10-08 Lichtempfindliche Halbleiteranordnung

Publications (1)

Publication Number Publication Date
GB1320822A true GB1320822A (en) 1973-06-20

Family

ID=5784573

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4367371A Expired GB1320822A (en) 1970-10-08 1971-09-20 Lifht-sensitive semiconductor arrangements

Country Status (11)

Country Link
US (1) US3760240A (enExample)
JP (1) JPS5513148B1 (enExample)
AT (1) AT313996B (enExample)
CA (1) CA946501A (enExample)
CH (1) CH528151A (enExample)
DE (1) DE2049507C3 (enExample)
FR (1) FR2110259B1 (enExample)
GB (1) GB1320822A (enExample)
IT (1) IT938972B (enExample)
NL (1) NL7113857A (enExample)
SE (1) SE362985B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1419143A (en) * 1972-04-04 1975-12-24 Omron Tateisi Electronics Co Semiconductor photoelectric device
JPS5120277B2 (enExample) * 1972-08-17 1976-06-23
JPS5824951B2 (ja) * 1974-10-09 1983-05-24 ソニー株式会社 コウガクソウチ
US3948682A (en) * 1974-10-31 1976-04-06 Ninel Mineevna Bordina Semiconductor photoelectric generator
US3988613A (en) * 1975-05-02 1976-10-26 General Electric Company Radiation sensing and charge storage devices
US4038104A (en) * 1976-06-07 1977-07-26 Kabushiki Kaisha Suwa Seikosha Solar battery
US4970567A (en) * 1987-11-23 1990-11-13 Santa Barbara Research Center Method and apparatus for detecting infrared radiation
JP2528191B2 (ja) * 1987-11-23 1996-08-28 サンタ・バーバラ・リサーチ・センター 赤外線放射検出装置
US5075743A (en) * 1989-06-06 1991-12-24 Cornell Research Foundation, Inc. Quantum well optical device on silicon
US5212395A (en) * 1992-03-02 1993-05-18 At&T Bell Laboratories P-I-N photodiodes with transparent conductive contacts
JP2000150652A (ja) * 1998-09-03 2000-05-30 Seiko Epson Corp 半導体装置およびその製造方法
WO2011075579A1 (en) * 2009-12-18 2011-06-23 First Solar, Inc. Photovoltaic device including doped layer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
NL6816923A (enExample) * 1968-11-27 1970-05-29

Also Published As

Publication number Publication date
DE2049507C3 (de) 1979-11-08
CA946501A (en) 1974-04-30
SE362985B (enExample) 1973-12-27
IT938972B (it) 1973-02-10
CH528151A (de) 1972-09-15
AT313996B (de) 1974-03-11
DE2049507B2 (de) 1979-03-08
DE2049507A1 (de) 1972-04-13
FR2110259B1 (enExample) 1977-04-22
US3760240A (en) 1973-09-18
NL7113857A (enExample) 1972-04-11
FR2110259A1 (enExample) 1972-06-02
JPS5513148B1 (enExample) 1980-04-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee