GB1447410A - Photocells - Google Patents

Photocells

Info

Publication number
GB1447410A
GB1447410A GB4899773A GB4899773A GB1447410A GB 1447410 A GB1447410 A GB 1447410A GB 4899773 A GB4899773 A GB 4899773A GB 4899773 A GB4899773 A GB 4899773A GB 1447410 A GB1447410 A GB 1447410A
Authority
GB
United Kingdom
Prior art keywords
layer
substrate
resistivity
junction
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4899773A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Priority to GB4899773A priority Critical patent/GB1447410A/en
Priority to DE19742447289 priority patent/DE2447289A1/en
Publication of GB1447410A publication Critical patent/GB1447410A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

1447410 Photocells FERRANTI Ltd 14 Oct 1974 [20 Oct 1973] 48997/73 Heading H1K A photocell responsive to ultra-violet and/or blue light comprises a thin N-type epitaxial layer 10 on a P-type substrate 11, the thickness of the layer 10 being in the range 0À1-1À0 mean minority carrier diffusion lengths. Minority carriers generated in the layer 10 by the absorption of ultra-violet or blue light can thus reach the junction 13. A suitable thickness of layer 10 is 0À1-10 Á (preferably 1 Á) for a resistivity of 0À1-10 #cm. (preferably 2 #cm). If red sensitivity is also desired the substrate resistivity is made at least 1À0 #cm. (preferably 10 #cm.), but if no red sensitivity is desired the substrate resistivity may be less than 0À1 #cm. (preferably 0À01 #cm).. The device shown includes diffused P<SP>+</SP>-type isolation walls 18 to laterally define the sensitive junction 13, but a conventional whole-area junction device with a comb-shaped upper electrode is also described. For a Si device the substrate 11 may be B-doped, since B diffusion upwards into the growing layer 10 will reduce the effective thickness of the layer 10.
GB4899773A 1973-10-20 1973-10-20 Photocells Expired GB1447410A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB4899773A GB1447410A (en) 1973-10-20 1973-10-20 Photocells
DE19742447289 DE2447289A1 (en) 1973-10-20 1974-10-03 PHOTOCELL

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4899773A GB1447410A (en) 1973-10-20 1973-10-20 Photocells

Publications (1)

Publication Number Publication Date
GB1447410A true GB1447410A (en) 1976-08-25

Family

ID=10450748

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4899773A Expired GB1447410A (en) 1973-10-20 1973-10-20 Photocells

Country Status (2)

Country Link
DE (1) DE2447289A1 (en)
GB (1) GB1447410A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
US4367368A (en) * 1981-05-15 1983-01-04 University Patents Inc. Solar cell

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2835136A1 (en) * 1978-08-10 1980-02-14 Fraunhofer Ges Forschung Semiconductor solar cell - with pattern of higher dopant concentration on substrate doped by ion implantation
EP0178664B1 (en) * 1984-10-18 1992-08-05 Matsushita Electronics Corporation Solid state image sensing device and method for making the same
DE4217428A1 (en) * 1991-12-09 1993-06-17 Deutsche Aerospace High performance silicon crystalline solar cell structure - has more highly doped layer integrated in lightly doped layer in area below metallic contact

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
US4367368A (en) * 1981-05-15 1983-01-04 University Patents Inc. Solar cell

Also Published As

Publication number Publication date
DE2447289A1 (en) 1975-04-24

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee