IE43560L - Hall effect device - Google Patents

Hall effect device

Info

Publication number
IE43560L
IE43560L IE762361A IE236176A IE43560L IE 43560 L IE43560 L IE 43560L IE 762361 A IE762361 A IE 762361A IE 236176 A IE236176 A IE 236176A IE 43560 L IE43560 L IE 43560L
Authority
IE
Ireland
Prior art keywords
layer
hall effect
substrate
effect device
type
Prior art date
Application number
IE762361A
Other versions
IE43560B1 (en
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of IE43560L publication Critical patent/IE43560L/en
Publication of IE43560B1 publication Critical patent/IE43560B1/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00Hall-effect devices
    • H10N52/101Semiconductor Hall-effect devices

Landscapes

  • Hall/Mr Elements (AREA)

Abstract

1518957 Hall effect devices STANDARD TELEPHONES & CABLES Ltd 25 Nov 1975 48355/75 Heading H1K A Hall effect device comprises an n-type epitaxial Si layer 1 on a p-type Si substrate 2, the resistivity of the substrate 2 being at least 4 #cm. and at least four times that of the epitaxial layer 1. Silica layers 3 are situated on opposed major surfaces, and ohmic contacts 4 are made to the layer 1 through diffused n<SP>+</SP> region 5. The doner dopant in layer 1 is chosen to have a low diffusion coefficient so that it does not significantly penetrate the substrate 2 during growth of the layer 1. [GB1518957A]
IE2361/76A 1975-11-25 1976-10-26 Hall effect device IE43560B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB48355/75A GB1518957A (en) 1975-11-25 1975-11-25 Hall effect device

Publications (2)

Publication Number Publication Date
IE43560L true IE43560L (en) 1977-05-25
IE43560B1 IE43560B1 (en) 1981-03-25

Family

ID=10448322

Family Applications (1)

Application Number Title Priority Date Filing Date
IE2361/76A IE43560B1 (en) 1975-11-25 1976-10-26 Hall effect device

Country Status (9)

Country Link
AU (1) AU1986176A (en)
CH (1) CH601919A5 (en)
DE (1) DE2652322A1 (en)
ES (1) ES453598A1 (en)
FR (1) FR2333354A1 (en)
GB (1) GB1518957A (en)
IE (1) IE43560B1 (en)
NL (1) NL7613064A (en)
ZA (1) ZA766083B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19857275A1 (en) * 1998-12-11 2000-06-15 Johannes V Kluge Integrated split-current Hall effect magnetic flux density sensor, e.g. for automobile and automation applications, has magnetic field sensitive elements and contacts produced by one or two photolithographic masking steps
DE19908473B4 (en) 1999-02-26 2004-01-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hall sensor with reduced offset signal

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL158658B (en) * 1967-09-08 1978-11-15 Philips Nv HALL ELEMENT AND COLLECTORLESS ELECTRIC MOTOR IN WHICH THIS HALL ELEMENT IS APPLIED.

Also Published As

Publication number Publication date
ES453598A1 (en) 1977-12-16
IE43560B1 (en) 1981-03-25
AU1986176A (en) 1978-06-01
NL7613064A (en) 1977-05-27
CH601919A5 (en) 1978-07-14
FR2333354A1 (en) 1977-06-24
GB1518957A (en) 1978-07-26
ZA766083B (en) 1977-10-26
DE2652322A1 (en) 1977-06-02

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