DE2036638A1 - Kontaktanordnung - Google Patents
KontaktanordnungInfo
- Publication number
- DE2036638A1 DE2036638A1 DE19702036638 DE2036638A DE2036638A1 DE 2036638 A1 DE2036638 A1 DE 2036638A1 DE 19702036638 DE19702036638 DE 19702036638 DE 2036638 A DE2036638 A DE 2036638A DE 2036638 A1 DE2036638 A1 DE 2036638A1
- Authority
- DE
- Germany
- Prior art keywords
- contact
- zone
- base
- emitter
- arrangement according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012212 insulator Substances 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702036638 DE2036638A1 (de) | 1970-07-23 | 1970-07-23 | Kontaktanordnung |
| CH861371A CH526204A (de) | 1970-07-23 | 1971-06-14 | Kontaktanordnung für einen Transistor, insbesondere Germanium-Hochfrequenztransistor |
| GB3036271A GB1305324A (xx) | 1970-07-23 | 1971-06-29 | |
| FR7126801A FR2099540A1 (xx) | 1970-07-23 | 1971-07-22 | |
| NL7110197A NL7110197A (xx) | 1970-07-23 | 1971-07-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702036638 DE2036638A1 (de) | 1970-07-23 | 1970-07-23 | Kontaktanordnung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2036638A1 true DE2036638A1 (de) | 1972-02-03 |
Family
ID=5777677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702036638 Pending DE2036638A1 (de) | 1970-07-23 | 1970-07-23 | Kontaktanordnung |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH526204A (xx) |
| DE (1) | DE2036638A1 (xx) |
| FR (1) | FR2099540A1 (xx) |
| GB (1) | GB1305324A (xx) |
| NL (1) | NL7110197A (xx) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3232837A1 (de) * | 1982-09-03 | 1984-03-08 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen einer 2-ebenen-metallisierung fuer halbleiterbauelemente, insbesondere fuer leistungshalbleiterbauelemente wie thyristoren |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2528232A1 (fr) * | 1982-06-08 | 1983-12-09 | Thomson Csf | Structure de contact sur une zone semi-conductrice superficielle fortement dopee et procede de fabrication |
-
1970
- 1970-07-23 DE DE19702036638 patent/DE2036638A1/de active Pending
-
1971
- 1971-06-14 CH CH861371A patent/CH526204A/de not_active IP Right Cessation
- 1971-06-29 GB GB3036271A patent/GB1305324A/en not_active Expired
- 1971-07-22 FR FR7126801A patent/FR2099540A1/fr not_active Withdrawn
- 1971-07-23 NL NL7110197A patent/NL7110197A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3232837A1 (de) * | 1982-09-03 | 1984-03-08 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen einer 2-ebenen-metallisierung fuer halbleiterbauelemente, insbesondere fuer leistungshalbleiterbauelemente wie thyristoren |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7110197A (xx) | 1972-01-25 |
| CH526204A (de) | 1972-07-31 |
| FR2099540A1 (xx) | 1972-03-17 |
| GB1305324A (xx) | 1973-01-31 |
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