CH526204A - Kontaktanordnung für einen Transistor, insbesondere Germanium-Hochfrequenztransistor - Google Patents

Kontaktanordnung für einen Transistor, insbesondere Germanium-Hochfrequenztransistor

Info

Publication number
CH526204A
CH526204A CH861371A CH861371A CH526204A CH 526204 A CH526204 A CH 526204A CH 861371 A CH861371 A CH 861371A CH 861371 A CH861371 A CH 861371A CH 526204 A CH526204 A CH 526204A
Authority
CH
Switzerland
Prior art keywords
transistor
contact arrangement
frequency
germanium high
germanium
Prior art date
Application number
CH861371A
Other languages
German (de)
English (en)
Inventor
Schembs Wolfgang
Kessler Heinrich
Schaedlich Helmut
Schloss Dietrich
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH526204A publication Critical patent/CH526204A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CH861371A 1970-07-23 1971-06-14 Kontaktanordnung für einen Transistor, insbesondere Germanium-Hochfrequenztransistor CH526204A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702036638 DE2036638A1 (de) 1970-07-23 1970-07-23 Kontaktanordnung

Publications (1)

Publication Number Publication Date
CH526204A true CH526204A (de) 1972-07-31

Family

ID=5777677

Family Applications (1)

Application Number Title Priority Date Filing Date
CH861371A CH526204A (de) 1970-07-23 1971-06-14 Kontaktanordnung für einen Transistor, insbesondere Germanium-Hochfrequenztransistor

Country Status (5)

Country Link
CH (1) CH526204A (xx)
DE (1) DE2036638A1 (xx)
FR (1) FR2099540A1 (xx)
GB (1) GB1305324A (xx)
NL (1) NL7110197A (xx)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2528232A1 (fr) * 1982-06-08 1983-12-09 Thomson Csf Structure de contact sur une zone semi-conductrice superficielle fortement dopee et procede de fabrication
DE3232837A1 (de) * 1982-09-03 1984-03-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer 2-ebenen-metallisierung fuer halbleiterbauelemente, insbesondere fuer leistungshalbleiterbauelemente wie thyristoren

Also Published As

Publication number Publication date
DE2036638A1 (de) 1972-02-03
NL7110197A (xx) 1972-01-25
GB1305324A (xx) 1973-01-31
FR2099540A1 (xx) 1972-03-17

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Legal Events

Date Code Title Description
PL Patent ceased