DE2032525A1 - Logische Schaltung - Google Patents
Logische SchaltungInfo
- Publication number
- DE2032525A1 DE2032525A1 DE19702032525 DE2032525A DE2032525A1 DE 2032525 A1 DE2032525 A1 DE 2032525A1 DE 19702032525 DE19702032525 DE 19702032525 DE 2032525 A DE2032525 A DE 2032525A DE 2032525 A1 DE2032525 A1 DE 2032525A1
- Authority
- DE
- Germany
- Prior art keywords
- current
- constant current
- path
- switching state
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 4
- 230000001419 dependent effect Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000384008 Sisis Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000036186 satiety Effects 0.000 description 1
- 235000019627 satiety Nutrition 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1176969A CH506920A (de) | 1969-08-04 | 1969-08-04 | Halbleiterschaltung zur Verarbeitung binärer Signale |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2032525A1 true DE2032525A1 (de) | 1971-02-18 |
Family
ID=4376691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702032525 Pending DE2032525A1 (de) | 1969-08-04 | 1970-07-01 | Logische Schaltung |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5440902B1 (enrdf_load_stackoverflow) |
| BE (1) | BE752249A (enrdf_load_stackoverflow) |
| CA (1) | CA931233A (enrdf_load_stackoverflow) |
| CH (1) | CH506920A (enrdf_load_stackoverflow) |
| DE (1) | DE2032525A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2056959B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1301136A (enrdf_load_stackoverflow) |
| NL (1) | NL7010313A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2288422A1 (fr) * | 1974-10-18 | 1976-05-14 | Thomson Csf | Portes logiques |
| FR2511823A1 (fr) * | 1981-08-21 | 1983-02-25 | Thomson Csf | Circuit logique a grande entrance utilisant au moins un transistor a effet de champ a faible tension de seuil |
| JP7079661B2 (ja) * | 2018-05-24 | 2022-06-02 | ラピスセミコンダクタ株式会社 | フラグ保持回路及びフラグ保持方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3299291A (en) * | 1964-02-18 | 1967-01-17 | Motorola Inc | Logic elements using field-effect transistors in source follower configuration |
-
1969
- 1969-08-04 CH CH1176969A patent/CH506920A/de not_active IP Right Cessation
-
1970
- 1970-06-17 FR FR707022199A patent/FR2056959B1/fr not_active Expired
- 1970-06-19 BE BE752249D patent/BE752249A/xx unknown
- 1970-07-01 DE DE19702032525 patent/DE2032525A1/de active Pending
- 1970-07-13 NL NL7010313A patent/NL7010313A/xx unknown
- 1970-07-22 GB GB35471/70A patent/GB1301136A/en not_active Expired
- 1970-07-28 CA CA089300A patent/CA931233A/en not_active Expired
- 1970-07-30 JP JP6621170A patent/JPS5440902B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL7010313A (enrdf_load_stackoverflow) | 1971-02-08 |
| FR2056959A1 (enrdf_load_stackoverflow) | 1971-05-07 |
| GB1301136A (en) | 1972-12-29 |
| JPS5440902B1 (enrdf_load_stackoverflow) | 1979-12-05 |
| CA931233A (en) | 1973-07-31 |
| BE752249A (fr) | 1970-12-01 |
| CH506920A (de) | 1971-04-30 |
| FR2056959B1 (enrdf_load_stackoverflow) | 1973-08-10 |
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