DE2026723A1 - - Google Patents
Info
- Publication number
- DE2026723A1 DE2026723A1 DE19702026723 DE2026723A DE2026723A1 DE 2026723 A1 DE2026723 A1 DE 2026723A1 DE 19702026723 DE19702026723 DE 19702026723 DE 2026723 A DE2026723 A DE 2026723A DE 2026723 A1 DE2026723 A1 DE 2026723A1
- Authority
- DE
- Germany
- Prior art keywords
- electrodes
- electrode
- laminar structure
- thin
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 14
- 239000002800 charge carrier Substances 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 13
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 10
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052981 lead sulfide Inorganic materials 0.000 claims description 4
- 229940056932 lead sulfide Drugs 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 230000005641 tunneling Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 150000002739 metals Chemical class 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82932269A | 1969-06-02 | 1969-06-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2026723A1 true DE2026723A1 (enrdf_load_stackoverflow) | 1970-12-10 |
Family
ID=25254199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702026723 Pending DE2026723A1 (enrdf_load_stackoverflow) | 1969-06-02 | 1970-06-01 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3569801A (enrdf_load_stackoverflow) |
| DE (1) | DE2026723A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2045802B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1308562A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4286275A (en) * | 1980-02-04 | 1981-08-25 | International Business Machines Corporation | Semiconductor device |
| DE3040873C2 (de) * | 1980-10-30 | 1984-02-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Feldeffekttransistor |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE436972A (enrdf_load_stackoverflow) * | 1938-11-15 | |||
| BE527524A (enrdf_load_stackoverflow) * | 1949-05-30 | |||
| US3116427A (en) * | 1960-07-05 | 1963-12-31 | Gen Electric | Electron tunnel emission device utilizing an insulator between two conductors eitheror both of which may be superconductive |
| US3254276A (en) * | 1961-11-29 | 1966-05-31 | Philco Corp | Solid-state translating device with barrier-layers formed by thin metal and semiconductor material |
| US3250967A (en) * | 1961-12-22 | 1966-05-10 | Rca Corp | Solid state triode |
| US3121177A (en) * | 1962-01-23 | 1964-02-11 | Robert H Davis | Active thin-film devices controlling current by modulation of a quantum mechanical potential barrier |
| US3267389A (en) * | 1963-04-10 | 1966-08-16 | Burroughs Corp | Quantum mechanical tunnel injection amplifying apparatus |
| US3400456A (en) * | 1965-08-30 | 1968-09-10 | Western Electric Co | Methods of manufacturing thin film components |
-
1969
- 1969-06-02 US US829322A patent/US3569801A/en not_active Expired - Lifetime
-
1970
- 1970-06-01 DE DE19702026723 patent/DE2026723A1/de active Pending
- 1970-06-01 GB GB2637470A patent/GB1308562A/en not_active Expired
- 1970-06-02 FR FR7020233A patent/FR2045802B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2045802A1 (enrdf_load_stackoverflow) | 1971-03-05 |
| FR2045802B1 (enrdf_load_stackoverflow) | 1973-10-19 |
| GB1308562A (en) | 1973-02-21 |
| US3569801A (en) | 1971-03-09 |
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