GB1308562A - Thin film devices and method of forming same - Google Patents
Thin film devices and method of forming sameInfo
- Publication number
- GB1308562A GB1308562A GB2637470A GB2637470A GB1308562A GB 1308562 A GB1308562 A GB 1308562A GB 2637470 A GB2637470 A GB 2637470A GB 2637470 A GB2637470 A GB 2637470A GB 1308562 A GB1308562 A GB 1308562A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- tunneling
- control electrode
- electrodes
- situated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 230000005641 tunneling Effects 0.000 abstract 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 239000011810 insulating material Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 229910000464 lead oxide Inorganic materials 0.000 abstract 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 239000011787 zinc oxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US82932269A | 1969-06-02 | 1969-06-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1308562A true GB1308562A (en) | 1973-02-21 |
Family
ID=25254199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2637470A Expired GB1308562A (en) | 1969-06-02 | 1970-06-01 | Thin film devices and method of forming same |
Country Status (4)
Country | Link |
---|---|
US (1) | US3569801A (enrdf_load_stackoverflow) |
DE (1) | DE2026723A1 (enrdf_load_stackoverflow) |
FR (1) | FR2045802B1 (enrdf_load_stackoverflow) |
GB (1) | GB1308562A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4286275A (en) * | 1980-02-04 | 1981-08-25 | International Business Machines Corporation | Semiconductor device |
DE3040873C2 (de) * | 1980-10-30 | 1984-02-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Feldeffekttransistor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE436972A (enrdf_load_stackoverflow) * | 1938-11-15 | |||
BE527524A (enrdf_load_stackoverflow) * | 1949-05-30 | |||
US3116427A (en) * | 1960-07-05 | 1963-12-31 | Gen Electric | Electron tunnel emission device utilizing an insulator between two conductors eitheror both of which may be superconductive |
US3254276A (en) * | 1961-11-29 | 1966-05-31 | Philco Corp | Solid-state translating device with barrier-layers formed by thin metal and semiconductor material |
US3250967A (en) * | 1961-12-22 | 1966-05-10 | Rca Corp | Solid state triode |
US3121177A (en) * | 1962-01-23 | 1964-02-11 | Robert H Davis | Active thin-film devices controlling current by modulation of a quantum mechanical potential barrier |
US3267389A (en) * | 1963-04-10 | 1966-08-16 | Burroughs Corp | Quantum mechanical tunnel injection amplifying apparatus |
US3400456A (en) * | 1965-08-30 | 1968-09-10 | Western Electric Co | Methods of manufacturing thin film components |
-
1969
- 1969-06-02 US US829322A patent/US3569801A/en not_active Expired - Lifetime
-
1970
- 1970-06-01 DE DE19702026723 patent/DE2026723A1/de active Pending
- 1970-06-01 GB GB2637470A patent/GB1308562A/en not_active Expired
- 1970-06-02 FR FR7020233A patent/FR2045802B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2045802B1 (enrdf_load_stackoverflow) | 1973-10-19 |
US3569801A (en) | 1971-03-09 |
DE2026723A1 (enrdf_load_stackoverflow) | 1970-12-10 |
FR2045802A1 (enrdf_load_stackoverflow) | 1971-03-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |