GB1308562A - Thin film devices and method of forming same - Google Patents

Thin film devices and method of forming same

Info

Publication number
GB1308562A
GB1308562A GB2637470A GB2637470A GB1308562A GB 1308562 A GB1308562 A GB 1308562A GB 2637470 A GB2637470 A GB 2637470A GB 2637470 A GB2637470 A GB 2637470A GB 1308562 A GB1308562 A GB 1308562A
Authority
GB
United Kingdom
Prior art keywords
layer
tunneling
control electrode
electrodes
situated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2637470A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB1308562A publication Critical patent/GB1308562A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cold Cathode And The Manufacture (AREA)
GB2637470A 1969-06-02 1970-06-01 Thin film devices and method of forming same Expired GB1308562A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82932269A 1969-06-02 1969-06-02

Publications (1)

Publication Number Publication Date
GB1308562A true GB1308562A (en) 1973-02-21

Family

ID=25254199

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2637470A Expired GB1308562A (en) 1969-06-02 1970-06-01 Thin film devices and method of forming same

Country Status (4)

Country Link
US (1) US3569801A (enrdf_load_stackoverflow)
DE (1) DE2026723A1 (enrdf_load_stackoverflow)
FR (1) FR2045802B1 (enrdf_load_stackoverflow)
GB (1) GB1308562A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4286275A (en) * 1980-02-04 1981-08-25 International Business Machines Corporation Semiconductor device
DE3040873C2 (de) * 1980-10-30 1984-02-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekttransistor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE436972A (enrdf_load_stackoverflow) * 1938-11-15
BE527524A (enrdf_load_stackoverflow) * 1949-05-30
US3116427A (en) * 1960-07-05 1963-12-31 Gen Electric Electron tunnel emission device utilizing an insulator between two conductors eitheror both of which may be superconductive
US3254276A (en) * 1961-11-29 1966-05-31 Philco Corp Solid-state translating device with barrier-layers formed by thin metal and semiconductor material
US3250967A (en) * 1961-12-22 1966-05-10 Rca Corp Solid state triode
US3121177A (en) * 1962-01-23 1964-02-11 Robert H Davis Active thin-film devices controlling current by modulation of a quantum mechanical potential barrier
US3267389A (en) * 1963-04-10 1966-08-16 Burroughs Corp Quantum mechanical tunnel injection amplifying apparatus
US3400456A (en) * 1965-08-30 1968-09-10 Western Electric Co Methods of manufacturing thin film components

Also Published As

Publication number Publication date
FR2045802B1 (enrdf_load_stackoverflow) 1973-10-19
US3569801A (en) 1971-03-09
DE2026723A1 (enrdf_load_stackoverflow) 1970-12-10
FR2045802A1 (enrdf_load_stackoverflow) 1971-03-05

Similar Documents

Publication Publication Date Title
GB1019741A (en) Solid state devices
US3385731A (en) Method of fabricating thin film device having close spaced electrodes
GB1529139A (en) Photovoltaic cell and a method of manufacturing such a cell
US3304469A (en) Field effect solid state device having a partially insulated electrode
IE822913L (en) Current enhanced photovoltanic device
GB1037519A (en) Electrical circuits
GB1482616A (en) Insulator substrate with a thin monocrystalline semiconductive layer and method of fabrication
US3204159A (en) Rectifying majority carrier device
JPS5457875A (en) Semiconductor nonvolatile memory device
GB1060731A (en) Semiconductor devices and methods of preparing them
JPS56125868A (en) Thin-film semiconductor device
US3671820A (en) High voltage thin-film transistor
US2829075A (en) Field controlled semiconductor devices and methods of making them
GB1308562A (en) Thin film devices and method of forming same
JPS57100770A (en) Switching element
GB1079204A (en) Improvements in and relating to thin film electrical devices
GB1149589A (en) Thin film active element
GB1035785A (en) Improvements in and relating to thin-film signal translating devices
US3372317A (en) Photoelectric device
GB1031976A (en) Contacting semiconductor bodies
GB1271832A (en) Improvements in and relating semiconductor devices
GB1365930A (en) Electrical superconductive device
JP3371130B2 (ja) 電界効果型トランジスタ
JPS5893282A (ja) 薄膜半導体素子
GB1271639A (en) Improvements in or relating to metal-semiconductor diodes

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees