DE202016009128U1 - Laserglühen eines rotierenden Substrats - Google Patents

Laserglühen eines rotierenden Substrats Download PDF

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Publication number
DE202016009128U1
DE202016009128U1 DE202016009128.0U DE202016009128U DE202016009128U1 DE 202016009128 U1 DE202016009128 U1 DE 202016009128U1 DE 202016009128 U DE202016009128 U DE 202016009128U DE 202016009128 U1 DE202016009128 U1 DE 202016009128U1
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Germany
Prior art keywords
substrate
radiation
reflector plate
laser source
source
Prior art date
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DE202016009128.0U
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German (de)
English (en)
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Applied Materials Inc
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE202016009128U1 publication Critical patent/DE202016009128U1/de
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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/10—Irradiation devices with provision for relative movement of beam source and object to be irradiated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Recrystallisation Techniques (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE202016009128.0U 2015-07-29 2016-07-19 Laserglühen eines rotierenden Substrats Active DE202016009128U1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562198556P 2015-07-29 2015-07-29
US62/198,556 2015-07-29

Publications (1)

Publication Number Publication Date
DE202016009128U1 true DE202016009128U1 (de) 2022-07-25

Family

ID=57883024

Family Applications (1)

Application Number Title Priority Date Filing Date
DE202016009128.0U Active DE202016009128U1 (de) 2015-07-29 2016-07-19 Laserglühen eines rotierenden Substrats

Country Status (8)

Country Link
US (1) US10256005B2 (cg-RX-API-DMAC7.html)
EP (1) EP3329510B1 (cg-RX-API-DMAC7.html)
JP (2) JP6985249B2 (cg-RX-API-DMAC7.html)
KR (1) KR102531865B1 (cg-RX-API-DMAC7.html)
CN (2) CN107851580B (cg-RX-API-DMAC7.html)
DE (1) DE202016009128U1 (cg-RX-API-DMAC7.html)
TW (2) TWI722722B (cg-RX-API-DMAC7.html)
WO (1) WO2017019384A1 (cg-RX-API-DMAC7.html)

Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
US10256005B2 (en) * 2015-07-29 2019-04-09 Applied Materials, Inc. Rotating substrate laser anneal
HUE060525T2 (hu) * 2015-10-09 2023-03-28 Applied Materials Inc Diódás lézer szelet hevítésre EPI eljárásokhoz
US10281335B2 (en) * 2017-05-26 2019-05-07 Applied Materials, Inc. Pulsed radiation sources for transmission pyrometry
JP7191504B2 (ja) * 2017-07-14 2022-12-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP2019021828A (ja) * 2017-07-20 2019-02-07 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN109935532B (zh) * 2017-12-15 2022-05-31 上海微电子装备（集团）股份有限公司 激光热处理装置和处理方法
US11195732B2 (en) * 2018-04-12 2021-12-07 Mattson Technology, Inc. Low thermal budget annealing
US11984330B2 (en) 2018-05-08 2024-05-14 Lam Research Corporation Atomic layer etch and deposition processing systems including a lens circuit with a tele-centric lens, an optical beam folding assembly, or a polygon scanner
JP7228990B2 (ja) * 2018-11-07 2023-02-27 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US11828656B2 (en) 2020-11-20 2023-11-28 Applied Materials, Inc. Reflector plate for substrate processing

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JPH05255842A (ja) * 1992-03-11 1993-10-05 Matsushita Electric Ind Co Ltd レーザ・スパッタリング装置
US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
DE10119047B4 (de) * 2000-04-21 2010-12-09 Tokyo Electron Ltd. Thermische Bearbeitungsvorrichtung und thermisches Bearbeitungsverfahren
JP2003347228A (ja) * 2002-05-30 2003-12-05 Renesas Technology Corp 半導体装置の製造方法および熱処理装置
US7734439B2 (en) * 2002-06-24 2010-06-08 Mattson Technology, Inc. System and process for calibrating pyrometers in thermal processing chambers
JP2004193490A (ja) * 2002-12-13 2004-07-08 Seiko Epson Corp レーザー照射装置、レーザーの照射方法、及び半導体装置の製造方法
JP2004342785A (ja) * 2003-05-15 2004-12-02 Sony Corp 半導体製造方法および半導体製造装置
US20040253839A1 (en) * 2003-06-11 2004-12-16 Tokyo Electron Limited Semiconductor manufacturing apparatus and heat treatment method
KR20050028081A (ko) * 2003-09-17 2005-03-22 주식회사 하이닉스반도체 멀티 편광 메뉴얼 블레이드
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
TWI297521B (en) * 2004-01-22 2008-06-01 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
JP2005259981A (ja) * 2004-03-11 2005-09-22 Advanced Lcd Technologies Development Center Co Ltd 結晶化方法及び結晶化装置
TW200741883A (en) * 2006-04-21 2007-11-01 Zeiss Carl Laser Optics Gmbh Apparatus for laser annealing of large substrates and method for laser annealing for large substrates
JP2010034491A (ja) * 2008-06-25 2010-02-12 Tokyo Electron Ltd アニール装置
US7915154B2 (en) * 2008-09-03 2011-03-29 Piwczyk Bernhard P Laser diffusion fabrication of solar cells
JP5611212B2 (ja) * 2008-09-17 2014-10-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板のアニールにおける熱量の管理
JP2010186815A (ja) * 2009-02-10 2010-08-26 Nec Corp 紫外線照射装置および紫外線照射方法
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JP4865878B2 (ja) * 2010-03-25 2012-02-01 株式会社日本製鋼所 雰囲気安定化方法およびレーザ処理装置
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JP5964626B2 (ja) 2012-03-22 2016-08-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
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US10256005B2 (en) * 2015-07-29 2019-04-09 Applied Materials, Inc. Rotating substrate laser anneal

Also Published As

Publication number Publication date
KR20180026789A (ko) 2018-03-13
CN107851580B (zh) 2022-10-18
EP3329510A4 (en) 2019-05-01
TWI722722B (zh) 2021-03-21
JP6985249B2 (ja) 2021-12-22
US10256005B2 (en) 2019-04-09
KR102531865B1 (ko) 2023-05-16
EP3329510A1 (en) 2018-06-06
US20170032865A1 (en) 2017-02-02
EP3329510B1 (en) 2022-04-13
TW201721723A (zh) 2017-06-16
JP2022043054A (ja) 2022-03-15
JP2018526819A (ja) 2018-09-13
TWI692012B (zh) 2020-04-21
CN115527896A (zh) 2022-12-27
WO2017019384A1 (en) 2017-02-02
TW202029299A (zh) 2020-08-01
CN107851580A (zh) 2018-03-27
JP7462604B2 (ja) 2024-04-05

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