DE2004090C3 - Monolithisch integrierter Transistor mit herabgesetztem inversem Verstärkungsfaktor - Google Patents

Monolithisch integrierter Transistor mit herabgesetztem inversem Verstärkungsfaktor

Info

Publication number
DE2004090C3
DE2004090C3 DE2004090A DE2004090A DE2004090C3 DE 2004090 C3 DE2004090 C3 DE 2004090C3 DE 2004090 A DE2004090 A DE 2004090A DE 2004090 A DE2004090 A DE 2004090A DE 2004090 C3 DE2004090 C3 DE 2004090C3
Authority
DE
Germany
Prior art keywords
transistor
zone
collector
auxiliary
main
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2004090A
Other languages
German (de)
English (en)
Other versions
DE2004090B2 (de
DE2004090A1 (de
Inventor
Horst Heinz Dipl.-Ing. 7032 Sindelfingen Berger
Siegfried Kurt Dipl.-Ing. Dr. 7300 Esslingen Wiedmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Priority to DE2004090A priority Critical patent/DE2004090C3/de
Priority to FR7045292A priority patent/FR2077406B1/fr
Priority to JP45116923A priority patent/JPS4935024B1/ja
Priority to GB2047171A priority patent/GB1334924A/en
Publication of DE2004090A1 publication Critical patent/DE2004090A1/de
Publication of DE2004090B2 publication Critical patent/DE2004090B2/de
Application granted granted Critical
Publication of DE2004090C3 publication Critical patent/DE2004090C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE2004090A 1970-01-30 1970-01-30 Monolithisch integrierter Transistor mit herabgesetztem inversem Verstärkungsfaktor Expired DE2004090C3 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE2004090A DE2004090C3 (de) 1970-01-30 1970-01-30 Monolithisch integrierter Transistor mit herabgesetztem inversem Verstärkungsfaktor
FR7045292A FR2077406B1 (https=) 1970-01-30 1970-12-08
JP45116923A JPS4935024B1 (https=) 1970-01-30 1970-12-24
GB2047171A GB1334924A (en) 1970-01-30 1971-04-19 Circuits including monolithic transistor structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2004090A DE2004090C3 (de) 1970-01-30 1970-01-30 Monolithisch integrierter Transistor mit herabgesetztem inversem Verstärkungsfaktor

Publications (3)

Publication Number Publication Date
DE2004090A1 DE2004090A1 (de) 1971-08-05
DE2004090B2 DE2004090B2 (de) 1979-11-29
DE2004090C3 true DE2004090C3 (de) 1980-08-07

Family

ID=5760890

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2004090A Expired DE2004090C3 (de) 1970-01-30 1970-01-30 Monolithisch integrierter Transistor mit herabgesetztem inversem Verstärkungsfaktor

Country Status (4)

Country Link
JP (1) JPS4935024B1 (https=)
DE (1) DE2004090C3 (https=)
FR (1) FR2077406B1 (https=)
GB (1) GB1334924A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56162370U (https=) * 1980-05-06 1981-12-02
FR2525818A1 (fr) * 1982-04-23 1983-10-28 Thomson Csf Transistor npn a detection de saturation et circuits logiques comprenant un tel transistor
JPS6023303U (ja) * 1983-07-25 1985-02-18 株式会社　小金井製作所 流量調整装置
JPS616078U (ja) * 1984-06-15 1986-01-14 三菱電機株式会社 流量制御バルブ
JPS62261779A (ja) * 1986-05-08 1987-11-13 Matsushita Electric Ind Co Ltd ガス制御装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB377311I5 (https=) * 1964-06-23 1900-01-01
US3482111A (en) * 1966-03-04 1969-12-02 Ncr Co High speed logical circuit
FR1594824A (https=) * 1967-12-18 1970-06-08

Also Published As

Publication number Publication date
FR2077406A1 (https=) 1971-10-22
JPS4935024B1 (https=) 1974-09-19
DE2004090B2 (de) 1979-11-29
DE2004090A1 (de) 1971-08-05
FR2077406B1 (https=) 1973-12-28
GB1334924A (en) 1973-10-24

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee