DE19964244C2 - Halbleiterlaser mit codotierten verteilten Bragg-Reflektoren - Google Patents

Halbleiterlaser mit codotierten verteilten Bragg-Reflektoren

Info

Publication number
DE19964244C2
DE19964244C2 DE19964244A DE19964244A DE19964244C2 DE 19964244 C2 DE19964244 C2 DE 19964244C2 DE 19964244 A DE19964244 A DE 19964244A DE 19964244 A DE19964244 A DE 19964244A DE 19964244 C2 DE19964244 C2 DE 19964244C2
Authority
DE
Germany
Prior art keywords
layer
layers
content
dopant
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19964244A
Other languages
German (de)
English (en)
Inventor
Hongyu Deng
Xiaozhong Wang
Chun Lei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Application granted granted Critical
Publication of DE19964244C2 publication Critical patent/DE19964244C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE19964244A 1998-08-31 1999-04-28 Halbleiterlaser mit codotierten verteilten Bragg-Reflektoren Expired - Fee Related DE19964244C2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/144,355 US6301281B1 (en) 1998-08-31 1998-08-31 Semiconductor laser having co-doped distributed bragg reflectors
DE19919382A DE19919382C2 (de) 1998-08-31 1999-04-28 Halbleiterlaser mit codotierten verteilten Bragg-Reflektoren

Publications (1)

Publication Number Publication Date
DE19964244C2 true DE19964244C2 (de) 2002-05-16

Family

ID=22508224

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19919382A Expired - Fee Related DE19919382C2 (de) 1998-08-31 1999-04-28 Halbleiterlaser mit codotierten verteilten Bragg-Reflektoren
DE19964244A Expired - Fee Related DE19964244C2 (de) 1998-08-31 1999-04-28 Halbleiterlaser mit codotierten verteilten Bragg-Reflektoren

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19919382A Expired - Fee Related DE19919382C2 (de) 1998-08-31 1999-04-28 Halbleiterlaser mit codotierten verteilten Bragg-Reflektoren

Country Status (7)

Country Link
US (1) US6301281B1 (ja)
JP (1) JP4608040B2 (ja)
KR (1) KR100647934B1 (ja)
DE (2) DE19919382C2 (ja)
GB (1) GB2341275B (ja)
SG (1) SG84522A1 (ja)
TW (1) TW410495B (ja)

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US6560265B2 (en) * 2001-09-11 2003-05-06 Applied Optoelectronics, Inc. Method and apparatus for polarizing light in a VCSEL
JP4066654B2 (ja) * 2001-12-19 2008-03-26 富士ゼロックス株式会社 面発光型半導体レーザ装置及びその製造方法
US6850548B2 (en) 2001-12-28 2005-02-01 Finisar Corporation Assymmetric distributed Bragg reflector for vertical cavity surface emitting lasers
DE10219345B4 (de) * 2002-04-30 2011-05-19 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Co-Dotierung
DE10262373B3 (de) * 2002-04-30 2013-01-17 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Co-Dotierung
US6931045B1 (en) 2002-08-12 2005-08-16 Sandia Corporation Distributed Bragg reflectors with reduced optical absorption
US20060215720A1 (en) * 2005-03-24 2006-09-28 Corzine Scott W Quantum cascade laser with grating formed by a periodic variation in doping
KR101228108B1 (ko) * 2005-11-09 2013-01-31 삼성전자주식회사 펌프 빔 반사층을 갖는 외부 공진기형 면발광 레이저
JP2010114214A (ja) * 2008-11-05 2010-05-20 Fuji Xerox Co Ltd 面発光型半導体レーザ素子、面発光型半導体レーザ素子の製造方法、および光送信装置
AT511270B1 (de) 2012-05-24 2015-07-15 Avl List Gmbh Verfahren und eine Vorrichtung zur Prüfung von elektrischen Energiespeichersystemen für den Antrieb von Fahrzeugen
CN109462143A (zh) * 2018-09-30 2019-03-12 中科芯电半导体科技（北京）有限公司 一种应用于vcsel中的dbr生长方法、分布式布拉格反射镜和垂直腔面发射激光器
KR20200049026A (ko) 2018-10-31 2020-05-08 엘지이노텍 주식회사 표면발광 레이저소자 및 이를 포함하는 발광장치

Citations (6)

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Publication number Priority date Publication date Assignee Title
US4371967A (en) * 1979-12-19 1983-02-01 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
EP0452032A2 (en) * 1990-04-13 1991-10-16 AT&T Corp. Top-emitting surface emitting laser structures
US5547898A (en) * 1994-07-05 1996-08-20 Motorola Method for p-doping of a light-emitting device
JPH09260770A (ja) * 1996-03-22 1997-10-03 Nippon Telegr & Teleph Corp <Ntt> 面発光レーザ
US5724376A (en) * 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
US5949807A (en) * 1994-12-28 1999-09-07 Mitsui Chemicals, Inc. Semiconductor laser device

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US5018157A (en) 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
EP0495301A1 (en) 1990-12-14 1992-07-22 AT&T Corp. Method for making a semiconductor laser
US5208820A (en) 1991-01-08 1993-05-04 Nec Corporation Optical device with low-resistive multi-level reflecting structure
US5226055A (en) * 1991-09-30 1993-07-06 At&T Bell Laboratories Devices having repetitive layers
US5170407A (en) * 1991-10-11 1992-12-08 At&T Bell Laboratories Elimination of heterojunction band discontinuities
US5212703A (en) * 1992-02-18 1993-05-18 Eastman Kodak Company Surface emitting lasers with low resistance bragg reflectors
US5212701A (en) * 1992-03-25 1993-05-18 At&T Bell Laboratories Semiconductor surface emitting laser having enhanced optical confinement
US5351257A (en) * 1993-03-08 1994-09-27 Motorola, Inc. VCSEL with vertical offset operating region providing a lateral waveguide and current limiting and method of fabrication
JP3668979B2 (ja) * 1993-08-31 2005-07-06 ソニー株式会社 光電子集積回路装置の製造方法
US5513202A (en) * 1994-02-25 1996-04-30 Matsushita Electric Industrial Co., Ltd. Vertical-cavity surface-emitting semiconductor laser
JPH07249581A (ja) * 1994-03-09 1995-09-26 Fujitsu Ltd Ｉｉｉ −ｖ族化合物半導体結晶成長法
US5530715A (en) * 1994-11-29 1996-06-25 Motorola, Inc. Vertical cavity surface emitting laser having continuous grading
JP3645343B2 (ja) * 1994-12-28 2005-05-11 三井化学株式会社 半導体レーザ素子
US5574744A (en) * 1995-02-03 1996-11-12 Motorola Optical coupler
US5568499A (en) 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors
US5557627A (en) * 1995-05-19 1996-09-17 Sandia Corporation Visible-wavelength semiconductor lasers and arrays
US5706306A (en) * 1996-03-15 1998-01-06 Motorola VCSEL with distributed Bragg reflectors for visible light
JPH10173294A (ja) * 1996-10-07 1998-06-26 Canon Inc 窒素を含む化合物半導体多層膜ミラー及びそれを用いた面型発光デバイス
EP0865124B1 (en) * 1997-03-12 2003-01-22 BRITISH TELECOMMUNICATIONS public limited company Mirrors for VCSEL
JPH10261839A (ja) * 1997-03-19 1998-09-29 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜及びその製造方法
JP3245545B2 (ja) * 1997-05-07 2002-01-15 シャープ株式会社 Ｉｉｉ−ｖ族化合物半導体発光素子
DE19723677A1 (de) * 1997-06-05 1998-12-10 Siemens Ag Optoelektronisches Halbleiterbauelement
GB2333895B (en) 1998-01-31 2003-02-26 Mitel Semiconductor Ab Pre-fusion oxidized and wafer-bonded vertical cavity laser

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371967A (en) * 1979-12-19 1983-02-01 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
EP0452032A2 (en) * 1990-04-13 1991-10-16 AT&T Corp. Top-emitting surface emitting laser structures
US5547898A (en) * 1994-07-05 1996-08-20 Motorola Method for p-doping of a light-emitting device
US5949807A (en) * 1994-12-28 1999-09-07 Mitsui Chemicals, Inc. Semiconductor laser device
US5724376A (en) * 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
JPH09260770A (ja) * 1996-03-22 1997-10-03 Nippon Telegr & Teleph Corp <Ntt> 面発光レーザ

Also Published As

Publication number Publication date
GB2341275B (en) 2003-08-13
SG84522A1 (en) 2001-11-20
DE19919382C2 (de) 2002-04-25
KR100647934B1 (ko) 2006-11-17
TW410495B (en) 2000-11-01
JP2000077772A (ja) 2000-03-14
GB2341275A (en) 2000-03-08
KR20000017638A (ko) 2000-03-25
JP4608040B2 (ja) 2011-01-05
US6301281B1 (en) 2001-10-09
DE19919382A1 (de) 2000-03-09
GB9920420D0 (en) 1999-11-03

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