DE1962003A1 - Halbleiteranordnung mit Waermeableitung - Google Patents

Halbleiteranordnung mit Waermeableitung

Info

Publication number
DE1962003A1
DE1962003A1 DE19691962003 DE1962003A DE1962003A1 DE 1962003 A1 DE1962003 A1 DE 1962003A1 DE 19691962003 DE19691962003 DE 19691962003 DE 1962003 A DE1962003 A DE 1962003A DE 1962003 A1 DE1962003 A1 DE 1962003A1
Authority
DE
Germany
Prior art keywords
arrangement according
carrier
semiconductor component
intermediate member
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691962003
Other languages
German (de)
English (en)
Inventor
Reed Bruce Spurgeon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE1962003A1 publication Critical patent/DE1962003A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H10W40/10—
    • H10W99/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10W72/07236—
    • H10W72/252—

Landscapes

  • Led Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Device Packages (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
DE19691962003 1968-12-17 1969-12-11 Halbleiteranordnung mit Waermeableitung Pending DE1962003A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78431568A 1968-12-17 1968-12-17

Publications (1)

Publication Number Publication Date
DE1962003A1 true DE1962003A1 (de) 1970-07-02

Family

ID=25132054

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691962003 Pending DE1962003A1 (de) 1968-12-17 1969-12-11 Halbleiteranordnung mit Waermeableitung

Country Status (6)

Country Link
US (1) US3593070A (cg-RX-API-DMAC10.html)
JP (1) JPS493027B1 (cg-RX-API-DMAC10.html)
DE (1) DE1962003A1 (cg-RX-API-DMAC10.html)
FR (1) FR2026315A1 (cg-RX-API-DMAC10.html)
GB (1) GB1270577A (cg-RX-API-DMAC10.html)
NL (1) NL6913858A (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007993A1 (de) * 1978-07-12 1980-02-20 Siemens Aktiengesellschaft Leiterplatte zur Halterung und elektrischen Verbindung von Halbleiterchips
DE3009295A1 (de) * 1979-03-19 1980-10-02 Gen Electric Halbleiterbaustein

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769694A (en) * 1970-12-28 1973-11-06 Gen Electric Ohmic contact for group iii-v p-type semiconductors
US3684930A (en) * 1970-12-28 1972-08-15 Gen Electric Ohmic contact for group iii-v p-types semiconductors
US3952231A (en) * 1974-09-06 1976-04-20 International Business Machines Corporation Functional package for complex electronic systems with polymer-metal laminates and thermal transposer
JPS546787A (en) * 1977-06-17 1979-01-19 Matsushita Electric Ind Co Ltd Luminous element
US4165474A (en) * 1977-12-27 1979-08-21 Texas Instruments Incorporated Optoelectronic displays using uniformly spaced arrays of semi-sphere light-emitting diodes
JPS59155804U (ja) * 1983-04-01 1984-10-19 松下電器産業株式会社 キユ−ビクル式受変電装置
US4760440A (en) * 1983-10-31 1988-07-26 General Electric Company Package for solid state image sensors
US4951123A (en) * 1988-09-30 1990-08-21 Westinghouse Electric Corp. Integrated circuit chip assembly utilizing selective backside deposition
FR2655774A1 (fr) * 1989-12-08 1991-06-14 Thomson Csf Perfectionnement aux transistors de puissance en materiaux iii-v sur substrat silicium et procede de fabrication.
JP3023883B2 (ja) * 1991-10-26 2000-03-21 ローム株式会社 サブマウント型レーザ
US5557115A (en) * 1994-08-11 1996-09-17 Rohm Co. Ltd. Light emitting semiconductor device with sub-mount
RU2161107C2 (ru) * 1998-05-29 2000-12-27 Зусманович Вениамин Самуилович Способ перевозки грузов на летательном аппарате
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6885035B2 (en) * 1999-12-22 2005-04-26 Lumileds Lighting U.S., Llc Multi-chip semiconductor LED assembly
US20050047140A1 (en) * 2003-08-25 2005-03-03 Jung-Chien Chang Lighting device composed of a thin light emitting diode module
WO2007018098A1 (ja) 2005-08-05 2007-02-15 Olympus Medical Systems Corp. 発光ユニット
US7816155B2 (en) * 2007-07-06 2010-10-19 Jds Uniphase Corporation Mounted semiconductor device and a method for making the same
CN101859857B (zh) * 2010-03-04 2014-12-31 广州市海林电子科技发展有限公司 一种led器件
CN105612622B (zh) * 2013-09-27 2019-02-22 英特尔公司 在硅鳍状物上形成led结构

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299194A (cg-RX-API-DMAC10.html) * 1962-10-15
US3414968A (en) * 1965-02-23 1968-12-10 Solitron Devices Method of assembly of power transistors
US3361868A (en) * 1966-08-04 1968-01-02 Coors Porcelain Co Support for electrical circuit component
US3440114A (en) * 1966-10-31 1969-04-22 Texas Instruments Inc Selective gold doping for high resistivity regions in silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007993A1 (de) * 1978-07-12 1980-02-20 Siemens Aktiengesellschaft Leiterplatte zur Halterung und elektrischen Verbindung von Halbleiterchips
DE3009295A1 (de) * 1979-03-19 1980-10-02 Gen Electric Halbleiterbaustein

Also Published As

Publication number Publication date
FR2026315A1 (cg-RX-API-DMAC10.html) 1970-09-18
GB1270577A (en) 1972-04-12
US3593070A (en) 1971-07-13
JPS493027B1 (cg-RX-API-DMAC10.html) 1974-01-24
NL6913858A (cg-RX-API-DMAC10.html) 1970-06-19

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