DE19605787B4 - Verfahren zur Herstellung eines Bor-Phosphor-Silikatglasfilmes - Google Patents
Verfahren zur Herstellung eines Bor-Phosphor-Silikatglasfilmes Download PDFInfo
- Publication number
- DE19605787B4 DE19605787B4 DE19605787A DE19605787A DE19605787B4 DE 19605787 B4 DE19605787 B4 DE 19605787B4 DE 19605787 A DE19605787 A DE 19605787A DE 19605787 A DE19605787 A DE 19605787A DE 19605787 B4 DE19605787 B4 DE 19605787B4
- Authority
- DE
- Germany
- Prior art keywords
- preparation
- glass film
- borophosphosilicate glass
- borophosphosilicate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000005380 borophosphosilicate glass Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/04—Joining glass to metal by means of an interlayer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950018554A KR0172039B1 (ko) | 1995-06-30 | 1995-06-30 | 보론 포스포러스 실리케이트 글래스막 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE19605787A1 DE19605787A1 (de) | 1997-01-02 |
DE19605787B4 true DE19605787B4 (de) | 2007-05-16 |
Family
ID=19419019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19605787A Expired - Fee Related DE19605787B4 (de) | 1995-06-30 | 1996-02-18 | Verfahren zur Herstellung eines Bor-Phosphor-Silikatglasfilmes |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH0917781A (de) |
KR (1) | KR0172039B1 (de) |
CN (1) | CN1061635C (de) |
DE (1) | DE19605787B4 (de) |
GB (1) | GB2302870B (de) |
TW (1) | TW288166B (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005086240A1 (en) * | 2004-03-05 | 2005-09-15 | Showa Denko K.K. | Boron phosphide-based semiconductor light-emitting device |
WO2006082468A1 (en) * | 2005-02-03 | 2006-08-10 | S.O.I.Tec Silicon On Insulator Technologies | Method for high-temperature annealing a multilayer wafer |
CN111540783B (zh) * | 2020-01-16 | 2023-09-26 | 重庆康佳光电科技有限公司 | 一种金属-氧化物半导体场效应晶体管及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0519393A2 (de) * | 1991-06-20 | 1992-12-23 | Semiconductor Process Laboratory Co., Ltd. | Verfahren zum Planarisieren einer Halbleitersubstratsoberfläche |
US5409858A (en) * | 1993-08-06 | 1995-04-25 | Micron Semiconductor, Inc. | Method for optimizing thermal budgets in fabricating semiconductors |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR940009599B1 (ko) * | 1991-10-30 | 1994-10-15 | 삼성전자 주식회사 | 반도체 장치의 층간 절연막 형성방법 |
-
1995
- 1995-06-30 KR KR1019950018554A patent/KR0172039B1/ko not_active IP Right Cessation
-
1996
- 1996-02-14 GB GB9603071A patent/GB2302870B/en not_active Expired - Fee Related
- 1996-02-16 JP JP8028788A patent/JPH0917781A/ja active Pending
- 1996-02-16 TW TW085102003A patent/TW288166B/zh active
- 1996-02-18 DE DE19605787A patent/DE19605787B4/de not_active Expired - Fee Related
- 1996-02-18 CN CN96105729A patent/CN1061635C/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0519393A2 (de) * | 1991-06-20 | 1992-12-23 | Semiconductor Process Laboratory Co., Ltd. | Verfahren zum Planarisieren einer Halbleitersubstratsoberfläche |
US5409858A (en) * | 1993-08-06 | 1995-04-25 | Micron Semiconductor, Inc. | Method for optimizing thermal budgets in fabricating semiconductors |
Also Published As
Publication number | Publication date |
---|---|
CN1061635C (zh) | 2001-02-07 |
KR970003653A (ko) | 1997-01-28 |
CN1145336A (zh) | 1997-03-19 |
TW288166B (en) | 1996-10-11 |
GB2302870B (en) | 1999-04-28 |
JPH0917781A (ja) | 1997-01-17 |
DE19605787A1 (de) | 1997-01-02 |
GB9603071D0 (en) | 1996-04-10 |
KR0172039B1 (ko) | 1999-03-30 |
GB2302870A (en) | 1997-02-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: HOEFER & PARTNER, 81543 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |