DE19605787B4 - Verfahren zur Herstellung eines Bor-Phosphor-Silikatglasfilmes - Google Patents

Verfahren zur Herstellung eines Bor-Phosphor-Silikatglasfilmes Download PDF

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Publication number
DE19605787B4
DE19605787B4 DE19605787A DE19605787A DE19605787B4 DE 19605787 B4 DE19605787 B4 DE 19605787B4 DE 19605787 A DE19605787 A DE 19605787A DE 19605787 A DE19605787 A DE 19605787A DE 19605787 B4 DE19605787 B4 DE 19605787B4
Authority
DE
Germany
Prior art keywords
preparation
glass film
borophosphosilicate glass
borophosphosilicate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19605787A
Other languages
English (en)
Other versions
DE19605787A1 (de
Inventor
Kyong Sik Yoo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of DE19605787A1 publication Critical patent/DE19605787A1/de
Application granted granted Critical
Publication of DE19605787B4 publication Critical patent/DE19605787B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/04—Joining glass to metal by means of an interlayer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
DE19605787A 1995-06-30 1996-02-18 Verfahren zur Herstellung eines Bor-Phosphor-Silikatglasfilmes Expired - Fee Related DE19605787B4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950018554A KR0172039B1 (ko) 1995-06-30 1995-06-30 보론 포스포러스 실리케이트 글래스막 형성방법

Publications (2)

Publication Number Publication Date
DE19605787A1 DE19605787A1 (de) 1997-01-02
DE19605787B4 true DE19605787B4 (de) 2007-05-16

Family

ID=19419019

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19605787A Expired - Fee Related DE19605787B4 (de) 1995-06-30 1996-02-18 Verfahren zur Herstellung eines Bor-Phosphor-Silikatglasfilmes

Country Status (6)

Country Link
JP (1) JPH0917781A (de)
KR (1) KR0172039B1 (de)
CN (1) CN1061635C (de)
DE (1) DE19605787B4 (de)
GB (1) GB2302870B (de)
TW (1) TW288166B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005086240A1 (en) * 2004-03-05 2005-09-15 Showa Denko K.K. Boron phosphide-based semiconductor light-emitting device
WO2006082468A1 (en) * 2005-02-03 2006-08-10 S.O.I.Tec Silicon On Insulator Technologies Method for high-temperature annealing a multilayer wafer
CN111540783B (zh) * 2020-01-16 2023-09-26 重庆康佳光电科技有限公司 一种金属-氧化物半导体场效应晶体管及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0519393A2 (de) * 1991-06-20 1992-12-23 Semiconductor Process Laboratory Co., Ltd. Verfahren zum Planarisieren einer Halbleitersubstratsoberfläche
US5409858A (en) * 1993-08-06 1995-04-25 Micron Semiconductor, Inc. Method for optimizing thermal budgets in fabricating semiconductors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940009599B1 (ko) * 1991-10-30 1994-10-15 삼성전자 주식회사 반도체 장치의 층간 절연막 형성방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0519393A2 (de) * 1991-06-20 1992-12-23 Semiconductor Process Laboratory Co., Ltd. Verfahren zum Planarisieren einer Halbleitersubstratsoberfläche
US5409858A (en) * 1993-08-06 1995-04-25 Micron Semiconductor, Inc. Method for optimizing thermal budgets in fabricating semiconductors

Also Published As

Publication number Publication date
CN1061635C (zh) 2001-02-07
KR970003653A (ko) 1997-01-28
CN1145336A (zh) 1997-03-19
TW288166B (en) 1996-10-11
GB2302870B (en) 1999-04-28
JPH0917781A (ja) 1997-01-17
DE19605787A1 (de) 1997-01-02
GB9603071D0 (en) 1996-04-10
KR0172039B1 (ko) 1999-03-30
GB2302870A (en) 1997-02-05

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: HOEFER & PARTNER, 81543 MUENCHEN

8339 Ceased/non-payment of the annual fee